量子阱半导体激光器

对高功率量子阱半导体激光器的爆破噪声和可能来自相同缺陷源的产生复合噪声（gr噪声）进行了研究。

The burst and g-r ( generation-recombination ) noise in high-power quantum well semiconductor lasers were studied theoretically and experimentally .

量子阱半导体激光器P-I特性曲线扭折的研究

Study on Kinks in P-I Characteristic Curves of Semiconductor Quantum-well Stripe Geometry Lasers

利用双区共腔GaAs／AlGaAs单量子阱半导体激光器，观测到半导体激光器在输出反馈损耗调制方式下的光双稳特性。

Using a CCTS GaAs / AlGaAs SQW semiconductor laser , we have observed the bistability arising from output feedback loss modulation in the semiconductor laser .

量子阱半导体激光器中的g-r噪声

The g-r noise in quantum well semiconductor lasers

通过对比样品老化前后光电导数的特征参量发现，老化后产生爆破噪声和gr噪声的器件为失效器件，表明高功率量子阱半导体激光器在使用和老化过程中有时会伴有爆破噪声和gr噪声。

By comparing the characteristic parameters of optic and electric derivative curves before and after aging , it is discovered that the device which produces burst and g-r noise after aging is failure device .

折射率缓变波导层分别限制单量子阱半导体激光器的模式分析

Mode Analysis of Graded-Index Separate-Confinement-Heterostructure Single-Quantum-Well ( GRIN-SCH-SQW ) Semiconductor Lasers

单量子阱半导体激光器在输出反馈损耗调制方式下的双稳特性

Bistability of a SQW Semiconductor Laser with an Output-feedback Loss-modulation Scheme

用直接模拟法分析量子阱半导体激光器瞬态响应

Analogous analysis of transient response characteristics for quantum - well lasers

单量子阱半导体激光器的调谐特性

Characteristics of wavelength tailoring to single - quantum - well semiconductor laser

InGaAsP/GaAs单量子阱半导体激光器光学特性的研究

Study on Optical Characteristics of InGaAsP / GaAs SQW Lasers

量子阱半导体激光器调制特性和噪声的电路模拟

Circuit modeling of quantum well semiconductor lasers for modulation response and noise

多量子阱半导体激光器的交叉增益调制波长转换特性

Wavelength Conversion Using Cross Gain Modulation of MQW - LD

连续波工作高功率应变单量子阱半导体激光器

High Output Power CW Strained Single Quantum Well Semiconductor Laser

碰撞锁模多量子阱半导体激光器模式锁定过程的物理模型

A Physical Model for CPM-MQW-LD Mode - Locking Process

量子阱半导体激光器的光束质量

Optical beam quality factors of quantum well semiconductor lasers

在量子阱半导体激光器中，量子尺寸引起的衍射效应使半导体激光器的光束质量很差。

The beam-quality of QW semiconductor laser was very bad for the diffract-effect .

量子阱半导体激光器概述

An Introduction to Quantum Well Semiconductor Lasers

本论文对2μm波段GaInAsSb/AlGaAsSb多量子阱半导体激光器的器件工艺及器件性能表征技术进行了研究。

The processing and characterization techniques of GaInAsSb / AlGaAsSbmultiple quantum well ( MQW ) lasers operating at wavelength 2 μ m are investigated .

实验利用光注入多量子阱半导体激光器产生的载流子消耗和带间载流子吸收产生的交叉增益调制效应，实现波长转换，转换光的光强变化幅度与偏置电流有关。

A wavelength conversion method was demonstrated using cross-gain modulation caused by gain compression and interband carrier absorption in multi-quantum well semiconductor laser injected by a signal light . The signal amplitude of the conversion light changes with bias current of the laser diode .

利用MOCVD研制了无铝双量子阱列阵半导体激光器。

The aluminum-free two-quantum-well semiconductor laser which wavelength is 940 nm is made by MOCVD .

940nm无铝双量子阱列阵半导体激光器

940 nm Aluminum-free Two-quantum-well Array Semiconductor Laser

GaAlAs/GaAs单量子阱列阵半导体激光器

Semiconductor Laser with GaAlAs / GaAs Single Quantum Well Array

报道一种用作光通讯光源的外腔锁模多量子阱结构半导体激光器。

An external cavity mode locked multiple quantum well diode laser is reported .

本文介绍了用分子束外延法制作的梯度折射率分别限制式单量子阱GaAs/AlGaAs半导体激光器。

Single - quantum - well GaAs / AlGaAs laser with graded - index separate confinement heterostructure ( GRIN - SCH - SQW ) were fabricated by molecular beam epitaxy .

大功率量子阱远结半导体激光器

High-power SQW Remote Junction Semiconductor Lasers The basic rules of laser including : Chinese Knot

介绍了808nm高功率量子阱远结半导体激光器的结构和器件特性，测试了器件的低频电噪声，讨论了噪声与频率、注入电流及器件质量的关系。

The structure and character of high - power quantum well remote junction semiconductor lasers are presented . The electrical noise of the devices is measured , the dependence of the noise on the frequency as well as on bias current is discussed .

多量子阱被动锁模半导体激光器的啁啾分析

Chirping analyses of multi - quantum - well passively mode-locked laser diodes

基于无铝单量子阱的大功率半导体激光器

Al - free SQW High - power Semiconductor Lasers

对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。

In this paper , the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes ( MLLDs ) is discussed , and the phase variation curve with carrier population of MLLDs is found .

利用MBE生长出GaAlAs／GaAs梯度折射率分别限制单量子阱激光器（GRIN－SCH－SQW）材料。折射率缓变波导层分别限制单量子阱半导体激光器的模式分析

GaAlAs / GaAs materials with gradient refraction index separate confinement single quantum well structure has been grown by MBE . Mode Analysis of Graded-Index Separate-Confinement-Heterostructure Single-Quantum-Well ( GRIN-SCH-SQW ) Semiconductor Lasers