多量子阱半导体激光器

多量子阱半导体激光器的交叉增益调制波长转换特性

Wavelength Conversion Using Cross Gain Modulation of MQW - LD

碰撞锁模多量子阱半导体激光器模式锁定过程的物理模型

A Physical Model for CPM-MQW-LD Mode - Locking Process

本论文对2μm波段GaInAsSb/AlGaAsSb多量子阱半导体激光器的器件工艺及器件性能表征技术进行了研究。

The processing and characterization techniques of GaInAsSb / AlGaAsSbmultiple quantum well ( MQW ) lasers operating at wavelength 2 μ m are investigated .

实验利用光注入多量子阱半导体激光器产生的载流子消耗和带间载流子吸收产生的交叉增益调制效应，实现波长转换，转换光的光强变化幅度与偏置电流有关。

A wavelength conversion method was demonstrated using cross-gain modulation caused by gain compression and interband carrier absorption in multi-quantum well semiconductor laser injected by a signal light . The signal amplitude of the conversion light changes with bias current of the laser diode .

报道一种用作光通讯光源的外腔锁模多量子阱结构半导体激光器。

An external cavity mode locked multiple quantum well diode laser is reported .

多量子阱被动锁模半导体激光器的啁啾分析

Chirping analyses of multi - quantum - well passively mode-locked laser diodes

对多量子阱被动锁模半导体激光器的噪声理论进行了系统的分析，并给出了半导体激光器腔内相位随载流子浓度变化的关系。

In this paper , the noise theory of monolithic multi-quantum-well passively mode-locked laser diodes ( MLLDs ) is discussed , and the phase variation curve with carrier population of MLLDs is found .