价电子带
- 网络Valence band;valence band, VB
价电子带-
生长在GexSi（1－x）（001）衬底上应变GaAs层的价电子能带结构与光学性质
The valence band structures and optical properties of strained GaAs layers grown on the ge_xsi_ ( 1-x )( 001 ) substrates
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铝单晶价电子能带结构的第一性原理计算研究
A Study on First-Principles of the Band Structure of Valence Electrons for Single Crystal Al
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结合能带结构对光学性质的分析显示，这类材料的光学性质在低能区域由于自由电子的带内跃迁呈现出金属性，高能区域则通过价电子的带间跃迁呈现出半导体特性。
Analysis results show that the optical properties of these materials in low-energy regions are metallic because of the free electrons intraband-transition , and the transit to semiconducting properties in high-energy area is caused by valence electrons interband-transition .