量子材料

随着科学技术进一步向微观尺度发展，在单分子荧光光谱、量子材料的超快现象等研究领域中，不但要求具有很高的时间分辨率，同时要求具有很高的空间分辨率。

Along with the development of science towards the further microcosmic fields , in many researches such as fluorescence spectrum of single molecule , ultra-fast phenomena study of quanta material , etc. , a high time-resolution is not enough , and a high spatial-resolution is needed too .

GaAs/AlGaAs量子阱材料的X射线形貌及其发光性能

X-ray topography and photoluminescence properties of gaas / algaas quantum well materials

Z扫描法研究nc-Si/SiNx多量子阱材料非线性光学特性

Study on Non-linear Optical Properties of nc-Si / SiN_x MQW with Z-scan Method

采用光致发光谱、光致发光激发谱以及拉曼光谱对GaN基量子阱材料进行了实验观察和分析。

GaN based quantum wells is studied by observing and analyzing photoluminescence spectrum , photoluminescence excited spectrum and Raman spectrum .

缓冲层对多量子阱材料GaAs/Ga（1-x）AlxAs共振态的影响

Effect of buffer layer on resonant states in material GaAs / Ga_ ( 1-x ) Al_xAs

MOCVD与MBE生长GaAs/AlGaAs量子阱材料的红外探测器特性比较

Performance Comparison of GaAs / AlGaAs Quantum Well Infrared Photodetectors Grown by MOCVD and MBE

分子束外延InAs量子点材料的透射电子显微镜研究

Study of Molecular Beam Epitaxy InAs Multilayers Dots by TEM

选择区域生长高质量InGaAsP多量子阱材料

High Quality InGaAsP MQW by Selective Area Growth

InGaAsP四元系量子阱材料的热稳定性

Thermal Stability of InGaAsP Quaternary Quantum Wells Materials

采用椭圆偏振光谱法对掺铬的半绝缘GaAs衬底和GaAs/AlGaAs量子阱材料的光学性质进行了研究。

The optical properties of the Cr doped semi-insulating GaAs and the GaAs / AlGaAs quantum well material are studied using the spectroscopic ellipsometry .

（ZnSe／Cdse）ZnSe／GaAs（001）多量子阱材料的X射线双晶衍

Structure analysis of ( znse / cdse ) / znse / gaas multiple quantum wells by X-ray double-crystal diffraction

垂直堆垛InAs量子点材料的分子束外延生长

Growth of Vertically Stacked and Self-Assembled InAs Quantum Dots

本文采用分子束外延技术制备了高质量的GaAs基InAs自组织量子点材料。

In this thesis , high quality GaAs-based InAs self-organized QDs were grown by molecular-beam epitaxy ( MBE ) .

高In组分InxGa（1-x）N/GaN多量子阱材料电致荧光谱的研究

Study on electroluminescence spectra of In_xGa_ ( 1-x ) N / GaN-MQWs materials with high indium contents

本论文研究了GaAs／AlGaAs多量子阱材料的电子以及自由电子激光辐照效应。

In this paper the author studied the effects of electron & free electron laser ( PEL ) irradiation on GaAs / AlGaAs multiple quantum wells .

气态源分子束外延（AlGa）InP和GaInP／AlInP多量子阱材料

( AlGa ) InP and GaInP / AlInP Multiple Quantum Wells Grown by Gas Source Molecular Beam Epitaxy

利用有机合成法，选择氧化铅和六甲基二硅硫烷作为前驱体，引入三辛基膦作为稳定剂，制备PbS量子点材料。

Lead oxide and bis ( trimethylsilyl ) sulfide were chosen as precursors , and trioctylphosphine was added as stabilizer to prepare PbS QDs using organometallic synthetic method .

基于GaAs-AlGaAs非对称耦合量子阱材料的半导体弱光开关

A Weak Optical Switch in GaAs-AlGaAs Asymmetric Coupled Quantum Wells

对InGaAsP量子阱材料生长、测试及器件制作工艺作了详细的说明，InGaAsP四元系材料的MOCVD高质量生长需要调整很多参数如Ⅴ／Ⅲ、中断时间等；

Depicting InGaAsP quantum well layer epitaxy material measurement and device fabrication technology . The material MOCVD epitaxy needs to regulate some parameters including V / III and interval .

为适应无汞荧光灯和等离子体平板显示（PDP）技术的发展，探寻新型量子剪裁材料成为真空紫外光（VUV）激发下高效发光材料研究的新途径。

With the development of mercury-free fluorescent tubes and plasma display panels , research new system of quantum cutting phosphors becomes new means to promote the efficiency of VUV excited phosphors .

对分子束外延（MBE）法在BaF2衬底上生长的N型Pb（0.88）Sn（0.12）Te/PbTe多量子阱材料进行了变温（16～300K）弱场霍尔效应测量。

N-type Pb_ ( 0.88 ) Sn_ ( 0.12 ) Te / PbTe multi-quantum well structures on BaF_2 substrate have been prepared by MBE technique . Weak field Hall coefficients are measured from 16K to 300K .

同时，在高能电子束轰击下，CdTe和CdSe荧光量子点材料能发射光子形成阴极荧光图像。

Under the excitation of high-energy electron the porous materials of CdTe and CdSe QDs will emit photons that can be collected to form a cathode luminescence ( CL ) image . 3 .

本文介绍了用MBE技术制作半导体超晶格和量子阱材料的进展，以及在高速电子器件和光学器件方面的应用。

In this paper , we presented recent advance on semiconductor superlattice and quantum well materials with MBE technique , and the applications of these materials in high-speed electronic devices and photoelectric devices .

因此，SESAM除了其量子阱材料的可饱和吸收效应能启动锁模外，本身的负克尔效应也有助于锁模的自启动。

These reveal that the negative Kerr effect of the SESAM can contribute to the self-starting of mode-locked lasers besides the saturable absorption mechanism .

半导体量子阱材料的自由电子激光辐照效应及OTCS测试研究

Study on GaAs / AlGaAs multiple quantum wells irradiated by free electron laser and OTCS measurement

用MBE方法生长了掺杂SiGe/Si量子阱材料，在低温下观测到近带边光跃迁。

The samples of doped SiGe / Si quantum well have been grown using a molecular beam epitaxy ( MBE ) system and the near-band-gap optical transition from these samples was observed at low temperatures .

从系统自由能角度，阐明了MBE生长的InGaNAs量子阱材料在高温热退火过程中的结构和物理性能的变化。

In this report , the effects of high temperature rapid thermal annealing on properties of InGaNAs / GaAs quantum wells grown by molecular beam epitaxy has been discussed .

与GaAs体材料相比，量子阱材料所需控制光强度能够减少约20%，有助于降低全光开关与全光调制器的功耗。

Compared with the model based on GaAs bulk materials , the model based on quantum wells materials can reduce the controlling power density by about 20 % to reach the same photon-induced refractive index change , and also decrease the controlling power consumption for all-optical switches and all-optical modulators .

分子束外延生长GaAlAs/GaAs量子阱材料时，适当的衬底温度和Ⅴ/Ⅲ束流比是改善AlGaAs材料生长质量的重要因素。

The GaAlAs / GaAs material with gradient refraction index quantum well structure has been grown by MBE . On the base of AlGaAs , GaAs fundamental material growth , excellent materials by the substrate temperature and ⅴ / ⅲ flux ratio optimization were achieved .

在考虑了量子阱材料中的增益和载流子浓度之间的对数关系后，得到了VCSOA的峰值响应频率以及3dB频率响应带宽的解析表达式。

After taking account of the logarithmic relation between the gain and the carrier concentration in quantum well material , the analytical expressions of the peak response frequency and the 3 dB frequency response bandwidth are obtained .