突变结

电流泵突变结变容管上变频器的交调问题

Intermodulation Problem in Abrupt Junction Current Pumped Varactor Upconverters

超突变结变容二极管的杂质浓度分布及n值

Distribution of Impurity Concentration and n Value for Hyperabrupt Varactor

GaAs超突变结变容管的C&V特性和击穿电压

C-V Characteristic and Breakdown Voltage of GaAs Hyperabrupt Junction Varactors

GaAs超突变结微波电调变容管

GaAs Hyperabrupt Junction Microwave Tuning Diodes

MOCVD生长超突变结GaAs变容管材料

Growth of Hyperabrupt GaAs Varactor Structure Material by MOCVD

微波砷化镓超突变结电调管容压特性的研究及其在VCO的应用

Characteristic Study of GaAs Hyperabrupt Junction Microwave Tuning Varactors and Thier Applications to VCO

本文叙述了一种利用FET振荡管和GaAs超突变结变容二极管构成的电压控制振荡器（VCO）。

A voltage-controlled oscillator ( VCO ) consisting of a FET oscillator and a GaAs hyperabrupt varactor is presented in this paper .

通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。

The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED ) was analyzed by using the ideal PIN structure ′ s electric field distribution model .

利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/（C2）-V和1/（C3）-V关系图。

The formula for calculating the effective impurity concentration in the abrupt junction , the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction .

并与采用GaAs超突变结变容二极管的VCO器件进行了比较，说明由于集成了RFMEMS可变电容，使得在RFMEMS可变电容的机械谐振频率近端时，MEMSVCO的相位噪声特性发生了改变。

And moreover , the performance of SSB phase noise is compared with VCO which is integrated with GaAs hyperabrupt junction varactor . It is explained that the characteristic of SSB phase noise changes close to the mechanical resonant frequency of RF MEMS variable capacitor .

关于圆柱边界突变结的击穿电压

On the Breakdown Voltage of Abrupt Junction with Cylindric Edges

一种新的超突变结电容电压方程

A New Equation for Capacitance-Voltage Characteristic of the Hyperabrupt Varactors

超突变结变容管容压变化指数的研究

C - V Index n of Hyperabrupt Varactors

本文详尽地讨论了砷化镓超突变结变容二极管的设计原理和方法。

In this method , the capacitance of the varactor diode is changed by voltage .

基于单层突变结理论，使用计算机计算了修正因子。

The correction factors based on the unilayer step-junction theory are calculated using an electrical computer .

圆柱突变结击穿电压及电场沿结边的分布

Analytical solutions for breakdown voltage and electric field distribution along junction edge for planar abrupt junction

根据单层突变结理论，借助电子计算机计算扩展电阻修正因子。

According to unilayer step-junction theory , spreading resistance correction factors are calculated by means of an electronic computer .

突变pin结的解析解问题

Problem of Analytical Solutions of Abrupt pin Junction

稳态大注入突变异质结Poisson方程理论

Poisson 's Equation Theory for the Abrupt Heterojunctions Under the Stable Large Injection Condition

K-ras基因突变与结直肠癌生物学行为的关系

Relationship between mutated k-ras and biological behavior of colorectal cancer

BCL-6基因5′非编码区点突变与结外弥漫大B细胞淋巴瘤的相关性研究

The study of relationship between the mutation of 5 ′ noncoding region of BCL-6 gene and extranodal diffuse large B cell lymphoma

随着工业化进展及饮食结构的改变，结直肠癌发病率呈明显上升趋势。K-ras基因突变与结直肠癌发生发展密切相关，具体机制仍未完全清楚。

With the progress of industrialization and changes in diet , the incidence of colorectal cancer showed a clear upward trend.K-ras gene mutation relates to the colorectal cancer closely in its genesis and development .

建立了带有不掺杂隔离层的突变异质结双极晶体管（HBT）模型，在热场发射－扩散（TFD）理论的基础上，又考虑了空间电荷区中的复合效应。

A more complete theoretical model based on the thermionic-field-dif-fusion ( TFD ) theory including recombination effects in the space-charge-region ( SCR ) for abrupt heterojunction bipolar transistors ( HBTs ) with a setback layer is presented in this paper .

测量了GDa-Si：H/n-c-Si异质结的高频C-V特性，由平带电压的偏移，计算了有效表面电荷和表面态密度，应用突变异质结能带模型对结果作了分析。

The high frequency C-V characteristics of GD a-Si : H / n-c-Si heterojunctions are measured . The effective surface charge and effective surface state density are also determined from flat-band voltage . The experiment results are analyzed by abrupt heterojunction energy band model .

突变异质结双极晶体管中的复合效应与电流传输

Recombination Effects and Current Transport in Abrupt Heterojunction Bipolar Transistors

单边突变p~+n结的非耗尽分析

Un - Depletive Analysis for One-Side Abrupt p ~ + n Junction

突变平面结表面电场的近似公式

Approximate formula of the electric field on the surface in an abrupt planar junction

遗传性非息肉性结直肠癌综合征的β连环蛋白外显子3基因突变与结直肠癌密切相关

Exon 3 β - catenin mutations are specifically associated with colorectal carcinomas in hereditary non-polyposis colorectal cancer syndrome

超突变Pn结的容压特性

The c v characteristic of the hyperabrupt p n junction

粪便p53基因突变检测在结直肠癌诊断中的应用

The application of p53 gene mutation status in fecal specimen in the diagnosis of colorectal carcinoma