异质外延

其次，论述了异质外延和SiGe／Si超晶格材料的应用前景。

Then the application possibility of heteroepitaxy and SiGe / Si superlattice material has been described .

由于制备SiC体单晶非常困难而且价格昂贵，因此SiC薄膜的异质外延生长是重要的。

The heteroepitaxy of the SiC film is important since high quality SiC wafer is expensive and hardly to be achieved .

X射线驻波方法研究半导体超薄异质外延层

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Si（100）上异质外延金刚石膜生长及其应用研究

Growth of Heteroepitaxial Diamond Films on Si ( 100 ) and Its Applications

硅衬底碳化对异质外延SiC薄膜结构的影响

Effect of carbonization on the heteroepitaxial growth of SiC films on Si substrates

在Si衬底上异质外延GaAs薄膜变激发强度的近红外光致发光

Near-Infrared Photoluminescence with Different Excitation Intensity of Heteroepitaxial GaAs Layers Grown on Si Substrates

异质外延GaN薄膜中缺陷对表面形貌的影响

Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology

GaAs三元异质外延层厚度测量的X射线衍射比强度法

X-Ray Diffraction Intensity Ratio Method for the Thickness Measurement of Ternary Heterogeneous Epitaxial Layers on GaAs Substrate

以Si为衬底GaAs异质外延工艺及其在半导体激光器中应用的研究进展

Research and Development of Heteroepitaxial Technology of GaAs on Si Substrates and Its Applications in Semiconductor Lasers

对于GaN基LED来说，同质外延十分困难，所以通常采用异质外延生长GaN薄膜。

For GaN-based LED , the homoepitaxial very difficult , so usually hetero-epitaxial growth of GaN films .

GaN薄膜异质外延制备技术的进展

Recent Advances on Heteroepitaxial Growth of GaN Films

基于低温InxGa（1-x）P组分渐变缓冲层的InP/GaAs异质外延

Heteroepitaxial growth of InP / GaAs using low-temperature In_xGa_ ( 1-x ) P graded buffers

PLD工艺制备高质量ZnO/Si异质外延薄膜

Fabrication of high-quality ZnO / Si heteroepitaxial films by pulsed laser deposition

新型硅基双异质外延SOI材料Si/γ-Al2O3/Si制备

Fabrication of novel silicon - based double heteroepitaxial SOI material of Si / γ - Al_2O_3 / Si

异质外延所产生的热膨胀系数差别和晶格失配会大大降低GaN薄膜质量。

Thermal expansion coefficient difference and lattice mismatch caused by heteroepitaxial would significantly reduce the quality of GaN films .

MBEGaAs/GaP（001）异质外延层结构参数的X射线双晶衍射研究碳掺杂GaAs的MBE生长

Structural Investigation by X-ray Double Crystal Diffraction of GaAs Epilayer Grown on GaP ( 001 ) Substrate by MBE

如何表征SiGe/Si异质外延薄膜中的应变对提升SiGe器件的性能至关重要。

How to characterize strain stored in SiGe epilayer is very vital to performance of SiGe devices .

Si（111）衬底上3C-SiC的固源MBE异质外延生长

Heteroepitaxial Growth of 3C - SiC on Si ( 111 ) by Solid Source Molecular Beam Epitaxy

AlSb/GaAs异质外延薄膜应变的HRTEM几何相位分析

Geometric phase analysis of strain in AlSb / GaAs hetero-epitaxial film by HRTEM

AlN/Si（111）复合衬底上4H-SiC薄膜的异质外延

Heteroepitaxial 4H-SiC Films Growth on AlN / Si ( 111 ) Composite Substrates

5晶（7晶）X射线衍射仪非常适合于高级半导体单晶，特别是Ⅲ－Ⅴ族和Ⅱ－Ⅵ族化合物半导体及其异质外延层的特性分析。

Crystal ( 7 - crystal ) X - ray diffractometer with high resolution is very suitable for analyzing compound semiconductors of ⅲ - ⅴ and ⅱ - ⅵ family and its heteroepitaxial layers .

SiC衬底上异质外延GaN薄膜XPS谱和PL谱研究对膜作了X射线分析和XPS谱分析。用NbN膜制成了超导微桥和厚差桥。

XPS and PL Studies of GaN Epilayers Grown on SiC Substrate X-ray analysis and XPS studies on NbN films were made and superconducting microbridges and VTBS of NbN were fabricated .

BaTiO3铁电薄膜低温异质外延的生长模式研究

Study of growth mode in BaTiO_3 heteroepitaxy at low temperature

在Si的金刚石结构上异质外延纤锌矿结构的AlN，尽管理论上是可行的，但是存在着晶格失配、热失配和反相畴等一系列难题。

The heteroepitaxy of wurtzite AlN on the diamond structure of Si is theoretically feasible , however , some problems such as lattice mismatch , thermal mismatch and antiphase domain exist in the practice .

实现高质量、特定取向的ZnO薄膜的异质外延生长是研究的热点，特别是非极性取向薄膜的可控生长是有待突破的瓶颈。

Realizing high quality and the specific orientation ZnO thin films in heteroepitaxial grown is the hot issue in studies , in particular , the controllable growth of ZnO thin films with nonpolar orientation will be studied intensively .

Si是现代IC技术的重要基础，在Si基片上异质外延生长3C-SiC，既能发挥Si工艺的成熟，又能发挥3C-SiC的性能优点，而成为人们长期以来坚持不懈的研究方向。

The heteroepitaxial growth of 3C-SiC on Si substrate not only unfurls the maturity of Si process , but also incarnates the excellence of 3C-SiC , so that it become for long researchful direction .

高氧压下氧化物薄膜同质和异质外延的RHEED实时监测

In situ monitoring of the growth of complex oxide thin films at high oxygen pressures using a three-stage pumping RHEED system

通过求解弛豫近似下的Boltzmann方程，利用并联电阻模型，研究了P-型异质外延金刚石膜的磁阻效应。

Taking the parallel connection resistance model , a theoretical description of the MR effect in heteroepitaxial diamond films is presented by solving the Boltzmann transport equation in the relaxation time approximation .

实验结果表明核化密度对Si（100）上异质外延金刚石膜生长有重要的影响.过低或过高的核化密度都不可能形成异质外延金刚石膜。

The experimental results showed that the nucleation density has an important effect on the growth of the heteroepitaxial diamond films on Si ( 100 ) . The heteroepitaxial diamond films can not be formed on Si ( 100 ) under lower and higher nucleation density .

论文首先介绍了一些研究背景，基于实验研究得到的STM图象，介绍了岛形貌的分类，同质、异质外延生长。

At first , some study background is introduced in the thesis . The kinds of island morphologies and the differences between homoepitaxial and heteroepitaxial are introduced according to the STM morphologies obtained from experiments .