特殊器件

TI微处理器中的集成模拟外设，请参见下面的特殊器件以获取更多信息。

Integrated Analog peripheral inside a TI microcontroller , see specific devices below for more info .

发现设备特殊器件的安全隐患，及时更换和维护设备运行的稳定性。

Find parts defect of safety and change it , keep tools run stable .

并且对特殊器件的散热处理进行了理论和实验两方面的分析，应用了半导体恒温控制平台，并给出实测数据，论证了方案的可行性。

Analysis the heat treatment of special devices from two respects of theory and experiment .

此外，文中还介绍了交流应力下的热载流子退化现象，以及在一些特殊器件结构中的退化现象。

Moreover , hot carriers degradation under dynamic stress and degradation in some special structured devices are also presented .

该技术对提高半导体器件的可靠性及制备某些特殊器件具有重要意义。

This new technology is very helpful to improving reliability of semiconductor Devices and making some special semiconductor devices .

微电子技术的不断发展，对光刻设备精度的要求越来越高，特别是在一些特殊器件的制作领域，要求基片多次曝光后必须达到较高的套刻精度。

As the development of the micro-electronics technology , the needs of high repeated ac-curacy in exposal become violent , specially in the manufacture of special equipment .

该效应可用于实现光网络中的特殊功能器件，如光时钟分布、多路波导耦合器等。

The effect can be used to realize special functional devices in optical networks , e.g. , optical clock distribution and multi-waveguide coupler , etc.

所以，为了提高器件的响应率和探测率，必须对QWIP器件的表面做一些特殊结构或器件，譬如45度磨角，一维、二维周期光栅，无序光栅，C-QWIP等。

Therefore , in order to enhance the responsivity and detectivity of the device , we have to fabricate some special structure or device such as edge coupler , grating , random reflector and Corrugated QWIP ( C-QWIP ) .

此外，该结构对小尺寸效应也有明显的抑制作用。目前，针对上述特殊结构的LDMOS器件的物理机制研究较少，更不用说建立电学特性的模型。

Furthermore , the proposed structure can obviously suppress scaling-down effects and its threshold voltage can be more easily designed . Currently , there are few physical mechanisms for the special structure LDMOS , to say nothing of the electrical characteristics modeling .

研制出特殊工艺的微波器件用化学镀金液。

Au electroless plating bath of special process for microwave devices was developed .

用于光通讯器件生产的进口原辅料和制品，包括特殊规格的无源器件零部件。

Imported material and products for optical-electronics components , including customized parts of passive components .

这些结果可以为设计特殊性能的纳米器件提供理论依据和参考。

These results may be important as basis and reference for us to design devices with special function .

调整这些参数和相应的介质环境可以实现对颗粒阵列体系性质的有效控制，这也为研究尺寸效应提供了便利，且在一些具有特殊功能的纳米器件方面具有潜在的应用价值。

By these parameters and the corresponding environmental media , properties of the array can be tuned effectively , which also facilitates the research on size-dependent properties and has potential applications in various nano-devices with special functions .

随着分子自组装技术、机械可控劈裂结方法以及扫描隧道显微术等实验手段的发展和应用，基于分子自身特性自下而上地构建具有特殊功能的分子器件成为当前分子电子学的研究热点。

With the development and application of various powerful experimental techniques , such as molecular self-assembly , mechanically controllable break junction and scanning tunneling microscope , fabricating functional molecular electronic devices by the bottom-up strategy becomes a hot research topic in molecular elctronics .