受主能级

其原因是硼元素的掺入促进了金刚石单晶的（111）晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。

It is indicated that the boron doping promotes the growth of ( 111 ) face of the diamonds , enhances acceptor level , narrow 's band gap and increases carrier concentration correspondingly .

表明Cu引入的受主能级具有浅受主的某些特点。

It implies that the acceptor level introduced by Cu ions has some character of shallow level .

Si中Au受主能级的流体静压力移动

Hydrostatic pressure dependence of gold acceptor levels in Si

结果表明该现象是由材料中Hg空位作为受主能级存在而形成的，红移幅度与样品组分/载流子浓度有关。

The results suggest this the phenomenon to be caused by the Hg vacancies and the abnormal red-shift is related to the composition and the carrier density of the materials .

NO2在此位置的吸附改变了表面各原子的分波态密度，并且在靠近价带的位置产生了额外的受主能级。

NO2 adsorption in this site makes some changes to partial density of state ( PDOS ) of surface atoms , and produces extra energy level near the valence band in band gap .

硅中金受主能级在单轴应力下瞬态电容的研究

A study of transient capacitance of gold acceptor energy level in silicon under uniaxial stress

硅中金受主能级特性的低温动态光伏研究

Study on Characteristics of Gold Acceptor in Silicon by Dynamic Photovoltaic Effect at Low Temperatures

受主能级的产生和电子的流失导致了吸附后表面电阻增加。

Extra accepter energy level and surface electrons losing contributed to the surface resistance rising after NO2 adsorption .

根据该式和发射率的实验数据以及切变畸变势常数，求出了金受主能级激活能随应力的改变。

With this formula and experimental data of emission rate and reported tangential deformation potential constant Eu , the active energy of gold acceptor under various uniaxial stress has been determined .

因而，根据本工作所依据的模型，则是有力地支持了硅中金受主能级与施主能级本届同一金杂质的两个能级的认识的正确性。

Therefore , the correctness of understanding that the gold acceptor level and the doner level in silicon essentially originate from the same gold impurity is then supported forcefully , from based model in this work .

用恒定温度下瞬态电容法研究了硅中金受主能级在沿〈100〉，〈110〉，〈111〉晶向单轴应力作用下的能级移动。

Using the method of transient capacitance at constant temperature , the shift of gold acceptor energy level in silicon under 〈 100 〉 , 〈 110 〉 , 〈 111 〉 uniaxial press has been studied .

用光热电离光谱方法研究了硅中硼受主杂质能级在0～11T磁场下的塞曼效应。

The Zeeman effect of B acceptor in Si was investigated with PTI technique under magnetic field up to 11T with B →∥ K →∥( 100 ) .

分析了n型半导化TiO2压敏陶瓷中晶粒间界处的受主态性质，得出为晶界受主态的能级是多级化的；

An analysis based on property of the acceptors at grain boundaries of semiconducting n - TiO2 varistor ceramic and the distribution with multi energy levels were considered in this paper .