受激发射

当ZnO薄膜具有良好的c轴取向和晶格结构时，可得到优良的光电性能比如紫外光受激发射。

Due to its structural properties such as good c-axis orientation and excellent crystal lattice property , it has outstanding opto-electronic properties , especially its ultraviolet stimulated emission .

光致发光（PL）谱显示，A1的掺杂可使ZnO变成单纯的紫外受激发射，并有效抑制ZnO的深能级发光。

The photoluminescence ( PL ) spectrum indicates that doping Al can form single ultraviolet stimulated emission of ZnO thin films , and restrain deep-level photoluminescence effectively . 2 .

红宝石在77°K的受激发射现象

Stimulated emission of radiation of ruby at 77 ° k

ZnO薄膜紫外受激发射研究的最新进展

Recent Advance in Research on Ultraviolet Stimulated Emission for ZnO Films

ZnO纳米颗粒受激发射的时间分辨特性

Time-Resolved Photoluminescence of Stimulated Emission from ZnO Nanoparticles

CO2激光00°1-10°0跃迁受激发射截面的测量与研究

Measurement of stimulated emission cross section of CO_2 laser from 00 ° 1 ~ 10 ° 0 transition

不同激发密度下CdS晶体的光致发光和受激发射

Photoluminescence and stimulated emission in CDs crystal at different excitation density

所得到的ZnO薄膜在蓝光波段具有强烈的受激发射。

The PL spectra of the film showed strong emission in the blue light band .

三氧化钼纳米颗粒的制备与性能分析ZnO纳米颗粒受激发射的时间分辨特性

Synthesis and performance characterization of MO_3 nanoparticles Time-Resolved Photoluminescence of Stimulated Emission from ZnO Nanoparticles

关于Nd∶YAG晶体R2→Y3跃迁有效受激发射截面的讨论

A Discussion on the Effective Stimulated Emission Cross Section of R_2 → Y_3Transition of Nd ∶ YAG Crystal

实现了低阈值的ZnO随机激光输出及ZnO异质pn结电泵浦受激发射。

We realized low-threshold current ZnO random laser operation and ZnO pn heterojunction electrically pump lasing .

关于受激发射特征的探讨ZnO薄膜受激发射特性的研究

RESEARCH ON THE CHARACTERISTICS OF STIMULATED EMISSION OF RADIATION Properties of the Stimulated Emission in the ZnO Thin Film

LD端面泵浦固体激光器理论在测量Nd：YVO4晶体有效受激发射截面中的应用

Measuring Effective Stimulated Emission Cross-sections of Nd : YVO_4 Crystals by the Theory of LD End-pumped Solid-state Lasers

根据由速率方程导出的CO2分子受激发射截面测量式，用脉冲增益放大技术测量了不同工作条件下CO2分子00°1～10°O跃迁7条支线的受激发射截面。

On the basis of measured expression from the rate equation , the stimulated-emission cross sections of seven lines of CO2 laser from 00 ? - 10 ?

在分子动力学方面，考虑了电子直接振动出发、V－V过程、V－T过程、自发发射和受激发射共5种过程。

Five processes are considered on aspect of molecular kinetics : direct vibrational excitation by electron impact , V-V and V-T collisional energy transfer , spontaneous and stimulated emission .

自1997年首次发现ZnO室温紫外受激发射以来，ZnO研究已成为继GaN之后紫外发射材料研究的又一研究热点。

Since the first observation of the stimulated ultraviolet emission at room temperature , ZnO has become another hotspot in the region of UV light emitting researching .

经判定，受激发射是由于ITO波导在与有机材料交界附近的增益区放大所致。

It was concluded that lasing was waveguided in ITO layer and amplified near the interface in lighting layer where gain was obtained by light pumping .

ZnO纳米线紫外受激发射是人们希望达到的目标，但以往的激发过程一般是采用深紫外光泵浦，这对应用本身就是一条不利的限制。

The ultraviolet laser emission is the expected goal of ZnO nanowires , but we need deep ultraviolet excite source to pump in previous experiments , which put a disadvantageous limit in future application .

应用McCumber理论计算了受激发射截面。

Stimulated emission cross section was calculated by McCumber theory .

纳米结构ZnO及ZnO稀土离子掺杂发光在蓝/蓝绿可见波段和紫外波段存在受激发射，可能成为制备短波长激光、发光半导体重要的候选材料。

Nanocrystals ZnO and Rare earth ion doped porous ZnO can be stimulated emission to luminescent between blue or blue - green band and ultraviolet band . The luminescence may serve as the candidate material for shot - wave length lasers and semiconductor luminescence .

文中对W.Koechner先生所著的《Solid-StateLaserEngineering》一书中关于Nd∶YAG晶体R2→Y3跃迁有效受激发射截面的描述进行讨论。

The description about the effective stimulated emission cross section of R_2 → Y_3 transition of Nd ∶ YAG crystal in the book " Solid-State Laser Emgineering " written by W. Koechner is discussed in the paper .

按这种增益方式，在此领域首次在有机电致发光二极管结构中实现了受激发射，增益区的形成主要依靠通过ITO一侧的光泵浦，也配合了电流注入。

In this amplifying way , lasing was firstly realized in an organic emitting diode in the area . The gain region was produced by light pumping through ITO side of the sample , and electrical injection was also applied .

在p-GaN/MgO/n-ZnO结构中实现了阈值电流为0.8mA的受激发射。

A lasing with the low threshold current of 0.8 mA was realized in the p-GaN / MgO / n-ZnO structure .

应用McCumber理论，计算了能级4I13/2→4I15/2跃迁的吸收和受激发射截面。

The absorption and stimulated emission cross-sections of 4I13 / 2 → 4I15 / 2 transition of the samples were calculated by McCumber theory .

结果表明：以PbF2等分子替代：PbO含量，样品密度、折射率、热稳定性、吸收截面和受激发射截面降低，但荧光半高宽和荧光寿命增加。

The results show that densities , refractive indices , thermal stability , absorption and stimulated emission cross-sections of the samples decrease , but the fluorescence full width at half max maximum and fluorescence lifetimes of the 4I13 / 2 level of Er3 + increase .

氧化锌晶体是直接带隙宽禁带半导体材料（禁带宽度3.37ev），现已发现具有室温下受激发射特性，有可能实现室温下半导体紫外发光。

ZnO crystal is material of the direct gap semiconductor ( the width of forbidden band : 3.37ev ) . The excited emission in ZnO crystal at room temperature has been found , so the ultraviolet luminescence in ZnO semiconductor can be acquired at room temperature .

正常结肠和结肠癌的激光诱发荧光光谱受激发射激发光谱学

Nitrogen Laser induced Fluorescence Spectroscopy of Normal Colon and Colonic Cancer

轴对称介质中光子的运动及其受激发射

Motion of Photon in Axially Symmetrical Medium and Its Stimulated Emission

自发发射的光子引起受激发射，开始了链式反应。

Spontaneous photons initiate stimulated emission and the chain reaction begins .

有机盐掺杂聚合物微腔的受激发射特性研究

Stimulated emission properties of an organic salt-doped polymer film in microcavity