能态密度

V，Cr掺杂AlP稀磁半导体的电子能态密度和磁性研究

A Study on Density of States and Magnetism of V-and Cr-Doped AlP Ferromagnetic Semiconductors

通过对半导体杂质饱和电离、灰锡（α－Sn）半导体特性以及Gunn效应等的解释，指出能态密度在研究半导体物理现象中的重要应用。

The origin of saturation ionization of impurities , semiconducting properties of Gray Tin and Gunn effect is analyzed . It clearly shows the important role of density of states in study of physical phenomena in semiconductors .

利用分段的多项式拟合了ZnS的实际导带结构，计算了能态密度和散射速率。

The density of state and scattering rates are also calculated from these polynomials .

NaI晶体能态密度的研究

The energy State densities of NaI crystal

单斜结构CrO2的设计及其能态密度的研究

The design of monoclinic CrO_2 and the energy state density of optimized CrO_2

在共轭梯度近似（GGA）下，采用第一性原理平面波赝势方法，对V和Cr掺杂闪锌矿CdSe半导体的基态电子能态密度和磁性进行了研究。

The ground state 's density of electronic states and the magnetic properties of V-and Cr-doped zinc-blende CdSe have been investigated by carrying out the first-principles plane-wave pseudopotential method within the generalized gradient approximation .

通过比较理论计算的能态密度分布和椭圆偏振吸收光谱的峰值位置，发现β-FeSi2的载流子输运性质主要由Si的3p层电子及Fe的3d层电子决定。

By comparing the distribution of the densities of states with the absorption spectra of spectroscopic ellipsometry , the results show that the charge carrier transport properties of β - FeSi_2 films depend on Si 3p and Fe 3d electrons .

采用EHMO方法并结合特殊点方案，利用自包容子程序，计算了卤化钾晶体的能态密度；

By EHMO incorporated with the special points procedure , and by the use of the selfcontained subroutine , the densities of energy states of potassium halides crystals are calculated .

多粒子多空穴能态密度的谐振子模型计算

The multiparticle and hole state densities based on the harmonic oscilator potential

统计物理中粒子能态密度的计算

To Calculate Density of Particle 's State of Energy in the Statistical Physics

结果表明，在中重核中，形变参数对能态密度的影响是很重要的。

The results indicate that for medium-heavy nuclei , deformation parameter has a great effect on state densities .

掺杂引起碳纳米管费米能级附近能态密度的变化及功函数的降低是其具有优异场致电子发射性能的主要原因。

The changes in the density of states near the Fermi level and in the work function are responsible for the differences in field emission properties of these films .

自组装半导体量子点由于缺陷少、生长技术成熟和具有δ函数形式的能态密度等优点而被广泛用于纳米电子器件制备中。

Self-assembled semiconductor quantum dots are widely used in fabrications of nano-electronic devices , since they have few defects , mature growth technology and electronic state density of 8 function .

根据关联系统能态密度的特征，提出一种判断迁移率边位置的经验方法&它可以应用到其它相关系统。

According to the characteristics of density of states of the correlated system , propose an experimental method to judge the positions of the mobility , which can be applied to other related systems .

本文从经典物理和量子力学的角度讨论了统计物理中粒子能态密度的计算方法，并从相对论量子力学角度分析了两种情况下的计算结果。

The article discusses how to calculate density of particle 's state of energy in the statistical physics by classical physics and quantum mechanics , and analyzes results of two ways by relativistic quantum mechanics .

我们的研究成果主要包括以下几个方面：第一，以一维长程关联无序为例，分别采用约化局域化长度和能态密度来描述体系的局域化性质。

The results of our research mainly include the following : First , the disorder in one-dimensional long-range correlation as an example , we use normalized localization length and density of States to describe the local-ization property of the system .

通过形成能和态密度等手段分析了H间隙杂质对碲镉汞材料电学性质的影响。

The electronic property of interstitial hydrogen has been analyzed by the method of formation energy and density of state . 2 .

用光热偏转光谱技术测量a-Si：H/a-SiNx：H多层膜的能隙态密度

Density of gap states in a-si : h / a-sin_x : h multilayer films from photothermal deflection spectroscopy

体系费米能附近态密度峰的变化是影响贮氢合金性能的主要因素；

The results show that the variation of density of state near E f is the main reason which influences the properties of the hydrogen storage alloys .

ZnO能带及态密度的密度泛函理论研究

Density Functional Theory Study on Energy Band and Density of States of ZnO

外加压力时，在比较小的应变下可以使graphene能带和态密度变化比较大。

A little pressure can result in a great change in the energy band and DOS of graphene .

根据DFT/B3LYP的计算结果，从能带、态密度和电子结构的变化，讨论了以CC键替换BN键的二碳和四碳掺杂的硼氮纳米管的导电性。

From the changes in energy band , density of state ( DOS ) and the electronic structure calculated by the DFT / B3LYP method , the conductivity of carbon doped boron-nitride nanotube ( BNNT ), which is formed by C_C bond substituting B_N bond , was discussed .

最后，我们还计算了TiN和NbN的能带与态密度图，证实两种化合物均呈金属性，费米面附近出现的赝能隙标志材料具有高稳定性。

At last , we calculate the band structures and density of states of TiN and NbN , whose results confirmed that these two compounds present metal properties , and pseudopotential gaps around femi level suggest that these materials have high stability .

给出了本征能谱、态密度及Hellmann-Feynman力，也指出了杂质氧对电子结构的影响及相关物理效果。

Energy spectrum , density of states and Hellmann-Feynman force have been obtained . The influence of the impurity oxygen on the electronic structure of the cluster and the relevant physical effects are indicated .

在只计入最近邻间相互作用的紧束缚近似下，计算了由两种面心立方金属组成的多层超薄共格结构（LUCS）的电子能谱和态密度。

The present note gives the results of computations of the electronic energy spectrum and local density of state of layered ultrathin coherent structures composed of two face-cen-tered-cubic metals under the tight-binding approximation with inclusion of only nearest neighbor interactions .

能流和态密度的计算结果都表示十二重准晶光子晶体具有光子带隙。

The simulation of total energy flow and the density of states show that the dodecagonal QPC has photonic gap for TM polarized electromagnetic waves .

得到了各钒氧化合物能带和态密度曲线，吸光系数、折射率和透光率等光学参数，以及温度对各曲线的影响，不同组分对相变温度的影响。

As a result , the energy band and state density curves , the optical parameters such as absorption coefficient , refractive index and transmittance for vanadium oxides are obtained .

本文首先计算了TiC的体相性质。通过模拟其能带结构、态密度、偏态密度及电荷分布等参数来了解其电子结构和键合特性等方面的性质。

The band structure , density of states , partial density of states and distribution of charge are simulated and analyzed to understand the electronic and bonding properties of TiC bulk .

通过对BTGS和CNGS晶体的能带图和态密度图分析可知，两种晶体都是带隙较宽的绝缘体。

From the band structure of BTGS and CNGS crystals , we can analyze that the two kinds of crystals are wide band gap insulators .

研究结果表明，辉铜矿与辉钼矿的电子结构性质（能带结构、态密度、Mulliken布居值、电荷密度等）的差异直接影响其与药剂的作用。

The results showed that different electronic structure properties ( energy band structure , density of states , Mulliken population value , charge density , etc. ) of chalcocite and molybdenite would directly impact on the flotation performance of chalcocite and molybdenite .