等离子刻蚀

对GD-a-SiC∶H膜等离子刻蚀的研究

A Study on Plasma Etching of GD-aSiC : H Films

反应腔拥有在RIE模式和等离子刻蚀模式下工作的能力。

The reactor is capable of working in the RIE mode and also in the plasma etching mode .

为了提高聚醚醚酮（PEEK）/碳纤维复合材料的反差，便于研究其精细结构，采用氩等离子刻蚀技术制备适合扫描电子显微镜研究的试样。

In order to study the fine structure of PEEK-carbon fiber composite the argon plasma etching technique has been used to prepare the samples for Scanning Electron Microscopy investigation .

同时，采用实验的方法优化出适于本GMR膜层刻蚀条件的各个光刻参数，说明了各个参数对工艺的影响。第四章主要介绍了等离子刻蚀的机理，说明主要的IBE流程。

Illustrate the effect of parameters on lithography processing . Chapter ⅳ introduces the mechanism of plasma etching , indicating that the main IBE process .

分析了表面研磨法、等离子刻蚀法、浸蚀除钴法、沉积中间层法在衬底表面形成稳定化合物等预处理对CVD金刚石薄膜沉积的影响。

The influence of the pretreatment methods by abrading substrate surface , plasma erosion , removing cobalt by corrosion , intermediate layer and forming stable compounds on substrate surface on CVD diamond films was stated .

在等离子刻蚀模式下，表面形成了比使用RIE情况下更厚的钝化层。

In the plasma-etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of RIE .

本文介绍利用国产DK-P290型等离子刻蚀设备完成的多晶硅膜腐蚀技术的研究。

Study on the plasma etching of polysilicon films using China-made DK-P290 etching system is introduced in this paper .

本文讨论了等离子刻蚀技术。

In this presentation , plasma etch technology will be discussed .

等离子刻蚀a-Si：H/a-C：H超晶格

Plasma Etching a-Si : H / a-C : H Superlattice

本文叙述等离子刻蚀铬膜的基本原理，用空气携带四氯化碳为气源，在高频电场作用下产生等离子体。

The basic principle of plasma etching for Chrome masking is presented .

等离子体诊断技术对于高密度等离子刻蚀过程的监控显得非常重要。

Plasma diagnostics techniques is important for controlling of high density plasma etching process .

等离子刻蚀制造硅场发射阵列

Plasma etching for fabrication of field emitter arrays

离心渗透等离子刻蚀法制备无基底阵列式碳纳米管复合膜

Research on array carbon nanotubes film without substrate by centrifugal infiltration and plasma etching

研究了采用等离子刻蚀机对硅进行深槽刻蚀中掩蔽层的选择及横向腐蚀的抑制等工艺问题。

Mask selection and lateral etching control in Si deep etching process technology are studied .

高密度等离子刻蚀机中的等离子体诊断技术

Diagnostics Techniques for High Density Plasma Tools

通过深紫外光刻和感应耦合等离子刻蚀设备，制备了所设计的器件。

The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching .

利用并行直写技术与感应耦合等离子刻蚀技术制作了部分二元光学元件。

Some binary optical elements were manufactured by parallel direct writing and inductive couple plasma etching technology .

通过增大射频功率，改变气体组分，气体流量等方法，可以较好地解决等离子刻蚀中的各向同性问题。

And isotropic etching can be achieved by increasing RF power , changing the gas composition and flow .

等离子刻蚀又是复杂离子团在电场磁场中的复杂化学物理作用，对于整个晶片的蚀刻速率和均匀度难以用简单理论模型计算分析。

The plasma etching is a complex process of ion movement in electronic-magnetic field and process of physical-chemical reaction .

本文介绍了气相等离子刻蚀终点监控的几种方法，并着重讨论了光学发射光谱法在终点动态监控中的应用。

Several methods for gas plasma etching endpoint monitoring are described Optical emission spectrometry used in endpoint dynamic monitoring is emphatically discussed .

InSb阵列探测芯片的感应耦合等离子反应刻蚀研究

Inductively coupled plasma reactive ion etching of InSb photovoltaic detector arrays

降雨条件下耕作方式对地表糙度的溅蚀效应等离子溅射复合刻蚀

Splash erosion effects of tillage practices on soil surface roughness under different rainfall conditions

小型等离子清洗蛐刻蚀机的应用

Application of Small Plasma Cleaning / Etching Instruments

随着集成电路集成度增加，晶片尺寸不断增大，等离子蚀刻的刻蚀速率控制和不均匀度控制变得越来越重要。

With the development of IC technology , the integrity of IC chip is increasing and wafer size is larger . The control of plasma etching etch rate and non-uniformity is getting more and more important .

叙述了用光学反射法在线监测LSI等离子及反应离子刻蚀过程和终点的监测原理与具体实施。

This paper describes the principle of end point monitoring of the plasma etch and the reactive ion etch for LSI by the optical reflection , and implementation of the optical reflection .

等离子、反应离子刻蚀机自动匹配网络的研究

Study on Automatic Network Matching for Plasma or Reactive lon Etching

等离子与反应离子刻蚀终点的在线监测&光学反射法

In Situ Monitoring of Etching End Point for Plasma and Reactive ion Etching by the Optical Reflection