表面钝化

表面钝化对GeMOS电容可靠性的影响

Effects of Surface Passivation on Reliability of Ge MOS Capacitors

对PECVDSiN表面钝化工艺的体会

The Realize of the Surface Passivation Technique by PECVD SiN

Si（100）&As表面钝化作用和氧吸附

Passivation Effect and Oxygen Adsorption of Si ( 100 ) - As Surface

HIT电池表面钝化技术及ZnO透明导电膜的研究

Studies of the Passivation of HIT Solar Cells and ZnO Transparent Conductive Oxide

介绍了采用辉光放电（GD）法淀积用作钝化的氢化非晶硅（a-Si：H）膜，并将其应用于硅器件的表面钝化。

The a-Si : H used as passivation film is deposited by GD method .

IC表面钝化PECVD工艺的计算机模拟

Simulation of IC Surface Passivation PECVD Process

表面钝化处理对SPSTi/HA生物材料性能的影响

Effect of surface passivation on the capability of SPS ti / ha bioactivity materials

GaAs（100）表面钝化和Mg／S／GaAs界面的SRPES研究

SRPES Studies of CH_3CSNH_2 Passivated GaAs ( 100 ) Surface and Mg / S / GaAs Interface

FeS2的电子结构与光电性能理论模拟及其表面钝化工艺研究

Theoretical Simulation of Electronic Structure and Optical-electronic Property of FeS_2 , and Its Surface Passivation

分析表明，随着Pd含量的增加，合金表面钝化膜厚度和电阻逐渐增大。

The analyses suggested that the thickness and the resistance of passive film on the surface of alloys increased with the increase of Pd content in the alloys .

结果表明，与工业电解镍相比，纳米孪晶镍具有更优异的耐点蚀性能，表面钝化膜具有内层p型／外层n型的双层半导体结构。

The results indicated that the passive films formed on NT coatings showed higher pitting corrosion resistance and a bi-layer semi conducting structure distribution ( inner p-type , outer n-type ), comparing with those formed on IE nickel .

半导体表面钝化方法很多，但使用最广泛的是PSG膜。

The method of semiconductor surfaces passivation have much , but PSG films widely used .

采用光化学气相淀积（光CVD）氮化硅薄膜进行器件的表面钝化，使整个器件提高了可靠性。

The devices were passivated by the thin film of Photo-CVD silicon nitride , we found that the reliability of the devices was to be raised .

InSb焦平面探测器背面钝化的研究元件制程：蚀刻，表面钝化，介电材料薄膜。

Study of Backside Passivation in InSb Focal Plane Detector Device Processing : Etching . Surface passivation ; dielectric films .

本文研究了以低压化学气相淀积方法生长PSG表面钝化膜中磷的含量对横向PNP管放大倍数的影响。

The effects of phosphorus content on magnification of PNP transistor in PSG film by LPCVD have been investigated .

对腐蚀后镀层表面钝化膜成分的AES分析表明，NiP合金镀层的耐蚀机理与表面磷化钝化膜的生成及溶解有关。

The AES analysis of the passivating film shows that the corrosion resistance mechanism of Ni P alloy plating is related to production and dissolving of phosphide passivating film .

将氢化非晶碳薄膜（GDα-C：H）应用于硅半导体晶体管的表面钝化，取得了与α-Si：H膜相类似的效果。

Hydrogenated amorphous Carbon film was applyed to passivation of surface of Silican semiconductor device and good effect that is close to cases passivated by a-Si : H film was achieved .

409L铁素体不锈钢的表面钝化膜性能

Properties of Surface Passivating Film of Ferritic Stainless Steel 409L

SIPOS钝化的平面功率晶体管采用半绝缘掺氧多晶硅和二氧化硅的多层表面钝化技术。

Power transistor with SIPOS passivation layer uses multilayer surface passivation technology which are Semi-Insulating oxygen-doped Polycrystalline-Silicon and SiO2 passivation layers .

报道了CdZnTe探测器晶片表面钝化工艺对其性能的影响。

The influences of surface passivation process on the properties of the wafers for CdZnTe ( CZT ) detector were reported .

结果表明：各因素对黄铜表面钝化效果的影响顺序从大到小依次为：温度、AMT浓度、BTA浓度、时间。

The test results showed that the five factors affecting brass surface treatment in a descending order as : temperature (℃), the concentration of AMT , the concentration of BTA and time ( min ) .

这些方法主要包括：采用高密度和小尺寸的有序Si量子点、光学微腔结构、表面钝化处理技术和稀土发光中心掺杂。

These methods including the ordered Si quantum dots with high density and small size , the use of optical microcavity structure , surface passivation technologies , and doping of rare earth luminescent centers , which are very important for the fabrication of high luminescent intensity Si quantum dots .

铅锑和铅锡合金板栅表面钝化层由Pb、铅氧化物、PbSO4、锑氧化物或锡氧化物构成。

In addition , the forms and positions of tin and antimony in the passive layer were investigated . The results showed that the passive layer developed on the Pb-Sn and Pb-Sb grids contained Pb , Pb oxides , PbSO_4 , Sb oxides or Sn oxides as well .

本文主要是介绍BD-101型半导体表面钝化台。

This paPer gives a description of the semiconductor surface Passivation set ( Model BD-101 ) .

介绍了聚酰亚胺（PI）作为硅双极型大功率开关器件芯片制造阶段表面钝化膜的工艺技术，该钝化工艺的工艺简单、成本低且能与普通的硅平面制造工艺兼容。

Author introduces a process technology that the Polyimide ( PI ) is used as the surface passivating of the Si bipolar high-power devices about chip madding phase . The process has the advantages of simple process , costing cheaply and being compatible with the common flat madding process .

提出了一种新颖的多孔硅表面钝化技术，即采用微波等离子体辅助的化学气相沉积（MPCVD）方法在多孔硅上沉积金刚石薄膜。

A novel passivation technology of porous silicon ( PS ) surface , i.e. , depositing diamond film on the PS surface by microwave plasma assisted chemical vapor deposition ( MPCVD ) method , was developed .

研究目的是优化Ni掩模PMMARIE的刻蚀参数，在氧刻蚀气体中加入表面钝化性气体CHF3，以较快的刻蚀速率获得垂直的侧壁和最小的掩模钻蚀。

The optimization of RIE parameters for Ni mask PMMA etching is studied . The CHF 3 gas of the surface passivation effect is added in the O 2 etching gas to obtain the vertical side wall and minimal mask undercut at a fast etching rate .

发运出去的产品，其表面钝化膜的颜色一定要保持一致。

Passivation colour of finished product must be keeped same color .

铜材表面钝化剂及钝化处理工艺研究

Study on Surface Passivators and Passive Processes Used for Copper Materials

黄铜表面钝化处理与耐环境腐蚀研究

Study on Surface Passivation and Resistance to Environmental Corrosion of Brass