介质薄膜

  • 网络DTF;Film
介质薄膜介质薄膜
  1. LSAWs技术检测ULSI互连布线low-k介质薄膜杨氏模量的算法研究

    Algorithm Research on Measuring the Young 's Module for Low-K Film of ULSI Interconnects by Lsaws

  2. 在CDR光盘中,要求记录介质薄膜有良好的光学性能,这样才能降低噪音,提高数据存储与读取的可靠性。

    In CD R optical disc , the recording media film should have nice optical properties in order to depress reading noise and increase the reliability when data are processed .

  3. 退火对非晶Al2O3高k栅介质薄膜特性的影响

    Effect of Annealing on Al_2O_3 Amorphous High-k Gate Dielectric Films Properties

  4. Y掺杂Al2O3高k栅介质薄膜的制备及性能研究

    Fabrication and properties of the Y-doped Al_2O_3 high-k gate dielectric films

  5. Ag-Nd2O3复合介质薄膜的光吸收特性研究

    Study of Photoabsorption Properties of Ag-Nd_2O_3 Thin Films

  6. 新型SiO-Ta2O5复合介质薄膜电容器的研究

    Study of new SiO-Ta_2O_5 compound dielectric film capacitors

  7. 超薄HfO2高K栅介质薄膜的软击穿特性

    Soft Breakdown Characteristics of Ultra-thin High-K HfO_2 Gate Dielectrics

  8. ECR-CVD制备氟化非晶碳低k介质薄膜

    Low-dielectric-constant fluorinated amorphous carbon films prepared by ECR-CVD

  9. 使用G(HL)~SHA膜系。制作0.85μm红外介质薄膜偏振片。

    The 0.85 micron infrared medium polarizing film we made is by use of G ( HL ) ~ s HA film system .

  10. 超薄层SiOxNy栅介质薄膜的制备与研究进展

    Progress on the Fabricated Technique of Ultrathin SiO_xN_y Films

  11. 反应溅射SiOxNy栅介质薄膜的成分及C-V特性研究

    Investigation of Composition and C-V Characteristics in the Reactive Sputtered SiO_xN_y Gate Dielectric Film

  12. 对于介质薄膜波导的一边或两边复盖有介电常数与光强成正比的非线性介质的三种不同结构,本文导出了三层非线性平面光波导TM波的精确色散关系。

    Exact dispersion relations for TM waves guided by thin dielectric films covered on one or two sides media of intensity-dependent refractive indexes have been derived .

  13. 在真空中用蒸发沉积的方法制备了埋藏有金属Ag纳米微粒的稀土氧化物复合介质薄膜AgNd2O3。

    The Ag Nd 2O 3 thin films , in which nanoparticles were embedded , were deposited by vacuum evaporation .

  14. 采用Z扫描技术验证了光致双折射的非线性过程本质,测量了PCN介质薄膜的非线性吸收系数。

    The nonlinear nature of the photochemical process in P CN was verified by the use of Z scan technique .

  15. 分别对300°C下采用等离子体增强化学气相淀积(PECVD)和700°C下采用热氧化技术制备应变硅沟道MOS器件栅介质薄膜进行了研究。

    An investigation is made into preparations of thin gate-oxides for strained Si channel MOSFET 's using PECVD at 300 ° C and low-temperature ( 700-800 ° C ) thermal oxidation , respectively .

  16. 恒电流应力引起HfO2栅介质薄膜的击穿特性

    Breakdown Characteristics of HfO_2 Gate Dielectrics Films Under Constant Current Stress

  17. 实验表明:STO薄膜与电极薄膜间的界面越平整,介质薄膜的可调率和耐压性越高;

    In order to get enhanced dielectric properties , smooth interface between STO thin films and electrode Was necessary .

  18. 等离子体化学气相淀积新型低介电常数SiCOF介质薄膜

    Preparation of Low Dielectric Constant SiCOF thin Films by Plasma Enhanced Chemical Vapor Deposition

  19. 论文阐述了F-P干涉仪的一般理论,利用矩阵法计算了多种的四分之一波堆光学介质薄膜的反射率和反射相移。

    The conventional theory of the F-P Interferometer was introduced firstly , and then the reflectivity and reflection phase shift of quite a few kinds of dielectric films consisting of quarter wave stacks were calculated .

  20. 本文采用射频溅射方法制备Ta2O5栅介质薄膜,深入研究了退火温度以及氧氩流量比对栅介质薄膜物性及电学性能的影响,并分析了其漏电流机制。

    We study the effect of annealing temperature and oxygen argon flow ratio on the gate dielectric film properties and electrical properties .

  21. 在实验上用溶胶-凝胶法制备了纳米量级的TiO2和ZnO随机介质薄膜,并对其表面形貌、颗粒尺寸、折射率等光学性质进行了表征,为后续的局域化实验研究铺设了道路。

    The random medium film of TiO_2 and ZnO have been prepared in nanometer magnitude by the method of collosol-gelatum experimentally . Surface pattern , partical size and refraction index of the film are studied , which will give important offer to the continuous research .

  22. 原子层沉积工艺(ALD)依靠化学源在衬底表面的自限制反应沉积薄膜,能够控制薄膜的厚度,是沉积高质量、保形的超薄栅介质薄膜的首选方法。

    Atomic layer deposition ( ALD ), as a growth method based on two separate self-limiting surface reactions , is a preferred technique to achieve high-quality , conformal , ultra-thin dielectric films with precise thickness control .

  23. 该仪器用于塑料等介质薄膜的厚度测量。

    This instrument is used in thickness measuring of plastic film .

  24. 激光输出特性对介质薄膜损伤的影响

    Effect of the laser output characteristic for damage in dielectric thin films

  25. 用衰减全反射方法测量介质薄膜的消光系数

    Measurement of Extinction Coefficients of Dielectric Thin Films Using Attenuated Total Reflection

  26. 纳米厚度非透明介质薄膜的测量

    Measuring and Calculating the Thickness of Non - transparent Dielectric Thin Film

  27. 高功率激光对光学介质薄膜破坏机理的研究进展

    Study of damage mechanism of optical dielectric film by high power laser

  28. 非均匀介质薄膜反射率的角度依赖特性

    Dependence of Reflectance on Incident Angle in the Inhomogeneous Medium

  29. 氮化硅介质薄膜内应力的实验研究

    Study of Internal Stress in Silicon Nitride Dielectric Thin Films

  30. 多级全通均衡器对介质薄膜滤波器进行色散补偿的探讨

    Multistage All-Pass Filter Compensating the Dispersion Introduced by the Thin Film Filter