溅射工艺

C轴择优取向ZnO薄膜的溅射工艺与结构研究

A Study on Sputtering Process and Structure of Preferred C-Orientation ZnO Thin Films

磁控溅射工艺参数对Cu薄膜织构的影响

Effect of sputtering parameters on texture of Cu films

磁控溅射工艺对纳米Ti膜形貌的影响

Effect of Magnetron Sputtering Process on Forming of Ti Thin Film

ZnO陶瓷靶制备及其薄膜RF溅射工艺研究

Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

直流磁控溅射工艺对ZnO薄膜结构影响的研究

Influences of Technical Conditions on the Structure of ZnO Films Deposited by DC Magnetic Control Sputtering

射频溅射工艺对WSx薄膜摩擦性能的影响

Effect of Radio Frequency Sputtering Technology on Frictional Behavior of WS_x Thin Film

溅射工艺参数对PZT铁电薄膜相变过程的影响

Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films

基于溶胶-凝胶法的ITO透光导电膜制备ITO薄膜的磁控溅射工艺优化研究

Preparation of conductive and transparent ITO film by sol-gel technique

溅射工艺对ITO膜性能的影响

Influence of sputtering process on ITO film performance

EL薄膜的溅射工艺

Sputtering Process for Making EL Films

RF磁控溅射工艺对TiNi（1-x）Cux合金薄膜组织形貌的影响

Influence of RF magnetron sputtering processes on morphology of TiNi_ ( 1-x ) Cu_x alloy films

用直流磁控溅射工艺制备了氧化铟锡（ITO）薄膜，研究了厚度对薄膜光学、电学性能的影响规律。

The effect of film thickness on optical , thermal performance of film were studied .

用磁控溅射工艺，在柔性衬底上，在不同直流偏压条件下，制备了ITO（氧化铟锡）透明导电膜。

ITO film was deposited on flexible substrates at different DC bias voltage by RF magnetron .

溅射工艺参数对BST薄膜介电常数的影响

Effect of Sputtering Processes on Dielectric Constants of BST Thin Films

在对复合膜的金属粒子体积分数f、厚度d进行多次组合实验后，取得了制备最佳组合膜系的溅射工艺参数。

Through repeated experiments for varying the volume fraction of metallic particles f and thickness d of composite film , the optimum sputtering parameters were obtained .

沿垂直膜面俄歇电子（AES）逐层分析证明，优化溅射工艺制备的薄膜化学成分分布均匀。

The results of AES analyses proved that the optimized composition is uniform along the cross-sections of the film .

溅射工艺参数对Ba（0.5）Sr（0.5）TiO3薄膜沉积速率和介电性能的影响

Effect of sputtering process on deposition rate and dielectrical properties of Ba_ ( 0.5 ) Sr_ ( 0.5 ) TiO_3 thin films

FeCoV（N）薄膜的直流磁控溅射工艺及其结构

DC Magnetron Sputtering Process and the Microstructure of FeCoV ( N ) Thin Film

循环间歇溅射工艺对PLT薄膜性能的影响

Effect of Circular Intermittent Deposition on the Morphologies , Microstructures and Properties of PLT Thin Films

本文介绍了用铟锡（IT）合金靶和氧化铟锡（ITO）烧结靶制备ITO膜的特点；采用ITO靶时溅射工艺参数对ITO膜性能的影响；

Abstract In this paper , the performance of ITO film prepared with IT alloy target and ITO sintered target are described .

又利用射频磁控溅射工艺制备了取向较好的AlN薄膜。

We deposit AlN by using radio-frequency magnetron sputtering which shows a good epitaxial film with ( 101 ) orientation .

采用中频非平衡磁控溅射工艺，在316L不锈钢基体上制备氮化钛膜层。

The TiN coating has been prepared on316L stainless steel by middle frequency unbalanced magnetron sputtering plating ( MF-UBMSP ) .

然后在（100）LNO薄膜电极上生长PZT铁电薄膜，通过合适溅射工艺参数的选择，成功地制备了高度（100）取向的PZT铁电薄膜。

Also , PZT ferroelectric thin films deposited on ( 100 ) LNO electrode are highly ( 100 ) orientation .

研究内容主要包括：直流磁控溅射工艺条件以及高温退火对ZnO薄膜结构特性的影响、对ZnO薄膜发光特性的影响，以及ZnO发光机理的探讨。

The content include : Influences of technical conditions and thermal annealing on the structure and light emitting of ZnO films by DC Magnetic Control Sputtering , luminescence mechanism of ZnO .

研究了射频磁控溅射工艺参数对AZO薄膜结构性能、电学性能和光学性能的影响。

The effects of the process parameters of the RF sputtering on the structural , electrical and optical properties of the films have been studied .

溅射工艺对SiCN薄膜沉积及光性能的影响

Influence of Sputtering Process on the Deposition and Optical Properties of SiCN Films

本文报道了在77K下测得溅射工艺制备非晶态硅的光致发光光谱，并与辉光放电工艺制得非晶态硅的光致发光光谱作了比较。

We measure the photoluminescence of sputtered amorphous silicon in comparsion with the amorphous silicon for glow discharge deposited at 77K .

本论文采用相同的磁控溅射工艺在Si基底上制备了氧化钒薄膜，并辅以快速退火工艺对薄膜样品进行热处理。

In this paper , the same vanadium oxide thin films with Si substrate were fabricated by facing Target Magnetron Sputter , and then some different Rapid Thermal Annealing ( RTA ) process conditions were employed to treat the samples .

采用了补氧直流磁控反应溅射工艺制备ITO膜，在不同基片加热温度和补氧流量下获得最低方块电阻值的最佳制备工艺。

ITO films were fabricated by oxygen-suppling DC magnetism reactive sputtering technology . Optimal fabricating technology including heating temperature of substrate and oxygen supplying flow was found to obtain minimum square resistance value .

采用磁控溅射工艺制备的Ag/TiO2复合薄膜与相同厚度的TiO2薄膜相比，光催化降解反应速率有明显提高，最高达3倍。

The photocatalytic degradation rate of Ag / TiO2 composite film for MB prepared by magnetron sputtering obviously increased , for the highest by three time , as compared with that of TiO2 film with same thickness .