场效应

栅控Tc的高温氧化物超导体场效应晶体管

High Temperature Oxide Superconductors Field Effect Transistor Using Gate Controlled Critical Temperature T_c

DNA场效应管传感器的分子设计

A Molecular Design of DNA Field Effect Transistor Transducer

微型封装P波段低噪声场效应管放大器

Mini - packed P-band low noise FET amplifier

研究了基于场效应晶体管的DNA传感器。

DNA sensor based on FET is researched .

沟道大电流感应n沟金属-氧化物-半导体场效应晶体管栅氧化层的加速击穿

Channel-Current-Induced Gate-Oxide Breakdown Acceleration in N-Channel MOSFET 's

场效应器件表面修饰对DNA测试性能影响的研究

The Research of the Influence of Surface Modification on the DNA Test Characteristics of Field Effect Devices

自动调压式场效应晶体管VP&VT测试仪的设计

Design of a new type FET V p & v t measuring instrument

离子敏场效应晶体管PH电极

ISFET solid - state pH electrode

本文提出了栅控超导临界温度Tc的高温氧化物超导体场效应晶体管（HTOSs－MOSuFET）的原理。

This paper presents the principle of High Temperature Oxide Superconductors FieldEffect Transistor ( HTOSs-MOSuFET ) using gate controlled critical temperature Tc .

微波GaAs功率场效应晶体管稳态温度场的数值模拟

Numerical simulation of steady state temperature field in microwave GaAs power FETs

场效应管RC移相振荡器的非线性振荡理论

Nonlinear Oscillation Theory in FET RC Phase Oscillator

应用遗传算法提取GaAs场效应管小信号模型参数

GaAs FET Small-Signal Model Extraction Using Genetic Algorithm

它是以金属钯作为栅极，由PdSio＿2Si构成的钯栅场效应管。

It has grid of metal Palladium and palladium field effect tube composed of Pd-Sio_2-Si .

本文基于离子敏场效应管的工作原理，设计了以DSP为核心单元的青霉素浓度测试系统。

This paper presents a measuring system of the concentration of penicillin with DSP based on the theory of ISFET .

H~+离子敏场效应传感器的SPICE模型仿真分析

The SPICE Model for H ~ + Ion-sensitive Field Effect Transistor

硅双栅MOS场效应晶体管的噪声特性

The Characteristics of Noise of Silicon Dual-Gate MOS Field-Effect Transistor

0.13μm射频MOS场效应晶体管特性及模拟

Study of 6H-SiC MOSFET Characterization and Modeling for 0.13 μ m RF MOSFETs

从已有的消色差系统中的束流尾场效应公式，变换成六维传输矩阵的形式，并扩充束流传输计算机程序TRANSPORT－EM／PC的功能，使之能用以计算尾场效应。

The formulae of beam wakefield effects in achromatic system obtained from author are Changed into the form of six-dimensional transform matrix .

用稳态光电导和场效应的联合测量研究Ge的快表面态

Investigation of the Fast Surface States of Ge by combined measurement of Steady Photoconductivity and Field Effect

MOS场效应管的新的电流公式

Advanced Current Characteristics of MOS Field Effect Transistors

系统研究了磷掺杂CdS纳米带底栅场效应管的电学和光电学性能。

The electrical and optoelectronic performances of back-gate CdS : P NR FETs have been studied systematically .

CMOS离子敏场效应管SPICE模型

SPICE model for CMOS ISFET

本文首先给出了SOI上纳米金属氧化物半导体场效应晶体管（NANOMOSFET）的结构，它是一种非传统MOSFET。

The structure of nanoscale metal oxide semiconductor field effect transistor ( NANO MOSFET ) is introduced .

本文讨论了一种MOS场效应型超短沟道弱连接超导三端器件的导电性能。

The conductivity of a field-effect like ultrashort channel weak link superconducting three-terminal device is discussed .

基于这种背景，本文将开展针对射频应用的0.13μMCMOS工艺射频MOS场效应管模型的研究。

This thesis will carry out the investigation on RF application MOSFET modeling in 0.13 μ m CMOS technology .

MOS场效应四极管

A MOS Field Effect Tetrode

铁电存储场效应晶体管I-V特性的物理机制模拟

Simulation of Physical Mechanism for I-V Characteristics of Ferroelectric Nonvolatile Memory Field Effect Transistor

研究不同类型、不同沟道长度的n沟金属－氧化物－半导体场效应晶体管（MOSFET）在不同栅电压下工作时栅氧化层的击穿特性。

This work extensively examines gate-oxide breakdown behaviors of n-MOSFET 's including both enhancement-type and depletion-type devices with various channel lengths under different operating conditions .

目前国际上0.13μMCMOS工艺射频MOS场效应管模型，特别是针对射频应用的模型，还不完善。

Also , RF MOSFET modeling in 0.13 μ m CMOS technology is not mature , especially the models for RF application .

这种主客体相互作用不仅受客体尺寸、极性和电性等自身因素的影响，而且受体系的温度、pH值、介质极性以及场效应等外界环境的影响。

This host-guest interaction is affected not only by guest 's polarity and size but also by the environment of medium such as temperature , pH , polarity and radiative stimulation .