硒化镉

非晶硒化镉和辉光放电非晶硅对锁模激光的瞬态响应

Transient response of amorphous CdSe and glow-discharge amorphous Si to mode-locked laser pulses

硒化镉（CdSe）是一种性能优良的直接带隙半导体材料，它具有宽的红外透过波段、高的激光损伤阈值、宽的禁带、大的非线性系数和透明波段适宜的双折射等优点。

CdSe is a direct band gap semiconductor with good properties . CdSe has broad infrared band , high laser-induced damage threshold , wide band gap , large nonlinear optical coefficient , and suitable birefringence of transparent waveband .

基于血红蛋白/硒化镉量子点多层膜的H2O2生物传感器

H_2O_2 Sensor Based on Hemoglobin / CdSe Quantum Dots Multilayer Films

硒化镉（CdSe）单晶体的变温霍尔效应研究

Studies of the Hall effects at different temperatures on CdSe single crystals

不同温度下硒化镉（CdSe）量子点的生长及荧光性研究

The study of luminescence and growth of CdSe quantum dots at different reaction temperature

液相合成硒化镉（CdSe）热力学研究

Study on the Liquid Synthesis Thermodynamics of CdSe

硒化镉（CdSe）是直接跃迁宽禁带隙的Ⅱ&Ⅵ族化合物半导体材料。

Cadmium Selenide ( CdSe ) is a ⅱ & ⅵ compound semiconductor with direct transition , wide-band-gap .

硒化镉（CdSe）单晶体生长原料的提纯及其标准极图的计算机实现

The Purification of CdSe Raw Material and the Computer Programming Realization to Protract Single Crystals ' Standard Pole Figures

本文着重探讨了硫硒化镉陶瓷釉的基础配方，通过基础釉组成保护法，使着色剂（Se，CdS）挥发减少到最低程度，而获得满意的红色。

The basic batch composition of sulfur cadmium selenide ceramic glaze was investigated in the paper . By means of the protection method for the basic glaze composition , the volatilization of the colourant ( Se , CdS ) was reduced to minimum to get pleased bright red .

并与目前国内医用X线电视摄象机中常用的日本进口硒化镉摄象管进行了对比讨论，从而确认了D7072氧化铅摄象管在X线电视中的应用地位。

Comparing this tube with chalni con made in Japan and used frequently in X-ray television camera , we consider that D7072 is very suitable for application in this camera .

提出了独特的硫硒化镉系列色釉的制备工艺&多熔块反应法。

A specific preparing process-multiple frits reaction method has been proposed .

水相制备硒化镉半导体量子点的荧光性能

Fluorescence of cadmium selenide semiconductor quantum dots synthesized by aqueous phase

聚噻吩/硒化镉共敏化电极的电沉积与光伏性能

Electrochemical synthesis and photovoltaic properties of polythiothene / CdSe electrode

碱性溶液中硒化镉电沉积过程的动力学研究

Research on Electrodeposition Process Kinetic of CdSe in Alkaline Solution

聚化合物薄膜电晶体内的硫化镉或硒化镉。

Cadmium sulphide or cadmium selenide in polymer based thin film transistor .

非晶硒化镉激光探测器的瞬态响应特性

Performance of Transient Response of the Amorphous CdSe Laser Detector

硒化镉室温核辐射探测器的表面电极研究

Surface Electrode Studies of the Cadmium Selenide Room Temperature Nuclear Radiation Detector

低惰性高分辨率的硒化镉摄像管靶面

CdSe Vidicon Target with Low Lag and High Resolution

非晶硒化镉微区结构及光吸收性能

Micro-area Structure and Optical Absorption of Amorphous Cadmium Selenide

硒化镉量子点化合物的合成及表面修饰

The Preparation and Surface Modification of CdSe Quantum Dots

非晶态硒化镉薄膜光电特性的研究

A Study of Photoelectric Characteristics of Amorphous CdSe Film

硒化镉量子点的合成、改性及荧光编码微球的制备

Synthesis and Modification of CdSe Quantum Dots and Preparation of Fluoresent coded Microspheres

第四，我们使用等压分子动力学的方法研究了硒化镉团簇在外压下的结构相变。

Fourth , the structural transformation of CdSe nanocrystals under hydrostatic pressure is studied .

硫硒化镉大红釉的研究

Study of sulphide selenide cadmium base red glaze

纳米硒化镉溶胶的制备

Study on the Preparation of Nanoparticles CdSe Sol

非晶态硒化镉超快激光探测器

An Ultrafast Laser Detector of Amorphous CdSe

硒化镉薄膜结构形貌和光谱特性的测试与探索

Study on Cadmium Selenide Thin Film in reference to Its Structural Configuration and Spectral Characteristics

包裹硫硒化镉颜料的制备

Preparation of protected cadmium sulphide selenide pigments

溶胶沉淀法合成硅酸锆包裹硫硒化镉颜料的研究

The Study of ZrSiO_4-Cd ( S_xSe_ ( 1-x )) Pigments Synthesized by Sol and Co-Precipitation Method

低温水热法制备壳/核型硒化镉量子点及其性能研究核壳结构水溶性量子点的合成与细菌检测应用的研究

The Study of Synthesis of Water-soluble Core / Shell Quantum Dots and Application of Bacteria Detection