基片

X波段基片集成波导带通滤波器的设计

Design of An X-Band Substrate Integrated Waveguide Bandpass Filter

使用旋涂法将其成膜于Si（100）基片之上。

The films formed on the 100 oriented Si substrate .

压电材料是SAW器件基本材料，该基片材料是影响SAW器件性能的一个决定性因素。

Piezoelectric material for SAW devices is the decision factor affecting SAW device characteristic .

介绍了一种新型的SAW基片材料-BTS极性微晶玻璃。

A new material for SAW devices and BTS polar glass-ceramics was introduced in this paper .

用溶剂蒸发法和旋涂法将聚合物涂在SAW基片表面。

The polymer was coated on the piezocrystal by two methods of solvent evaporation and spin coating .

Al2O3质厚膜电路基片的抗热震机理

The mechanism of thermal shock resistance of al_2o_3 ceramic thick film substrate of circuit

Ti缓冲层及退火处理对Si（111）基片上生长的ZnO薄膜结构和发光特性的影响

Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si ( 111 ) substrates

重复使用四次后，基片变得非常粗糙，电感耦合等离子体原子发射光谱仪证实这是由于催化剂B分子从基板上脱落所造成的。

After recycling four times , catalyst B monolayer became very rough due to catalyst B molecular falling off from the substrate .

基于CMOS传感器的基片图像识别系统的研究

Research on Substrate Image Recognition System Based on CMOS Sensor

PIXE应用于分析Si基片热扩Ni的深度分布

PIXE analysis of depth profile of Ni thermally diffusing in Si substrate

基片上二元组份薄膜的定量分析的MonteCarlo模拟计算方法

The Monte Carlo Simulation Method for Quantitative Analysis of a Binary Film on a Substrate

其零电阻温度为101K.薄膜与基片之间界面清晰，没有过渡层，薄膜具有良好的c取向外延条纹。

The zero conductivity temperature of the film is 101K and it is c-axis in orientation with clear boundary between the film and the substrate .

XRD摇摆曲线在单晶基片质量检测中的应用

Application of XRD rocking Curve to evaluate The quality on single crystal substrates of film growing

基片表面预处理对热丝CVD法生长金钢石薄膜的影响

The effect of substrate surface pre-polishing on diamond thin films by HFCVD

阐述了基片弯曲法测量薄膜应力的原理，设计了用光杠杆法测量试样曲率的装置，并实时测量了Si基Ag/Fe多层膜在退火过程中表面弯曲曲率的变化。

Real time curvature change of Ag / Fe multilayer Si substrate during annealing was detected using the apparatus .

AA型充电电池基片与极耳的凸焊

Projection welding between base sheet and electrode conductor of AA type charging battery

对于同一电极基片，当电极胶pH值不同时，其交流阻抗随电极胶pH值的增大而增大；

When the electrode gel is changed , AC impedance of the ECG electrode increases with the increase of the pH value .

这样的现状促使人们探讨在一些廉价衬底上生长SiC薄膜的方法，比如硅基片。

This has prompted people to explore the growth of SiC thin films on Si substrate method .

本实验还确定了5mol%MgO：LiNbO3晶体X切型和y切型基片的扩散参数和质子交换激活能。

Diffusion parameters and proton-exchange activation energy for x-cut and y-cut 5mol % MgO : LiNbO_2 substrates are determined in the study .

同时由W基片上穿晶断裂说明在接头内部存在了较大的残余热应力。

The transcrystalline fracture of the W substrate demonstrate that it exists huge residual heat stress within the joint .

SAW器件要求具有低延时温度系数、高机电耦合系数和高传播特性的良好基片材料。

SAW devices require good substrate materials with low temperature coefficient of delay , high electromechanical coupling coefficient and fast propagation characteristics . So far .

采用了一种新的技术方案减小了实验对大的激光功率的要求.利用激光驻波场会聚准直性较好的Cr原子，并使其沉积在硅基片上形成纳米光栅结构。

The collimated Cr atoms are focused by a standing-wave laser field as they are deposited on a silicon substrate .

光照溶胶及基片对TiO2薄膜光催化性能的影响

Effects of Irradiated Sol and Substrates on Photocatalytic Activity of TiO_2 Films

抛光液中磨料和化学成分对单晶MgO基片化学机械抛光的影响

Influence of abrasive and chemical composition on chemo-mechanical polishing of MgO single crystal substrate

以Li2B4O7为基片150MHzSAWF的设计与研制

Design and Fabrication of 150 MHz SAWF on Li_2B_4O_7 Crystal Substrate

基片温度对直流辉光等离子体辅助反应蒸发法沉积的ITO膜性能的影响

Effect of Substrate Temperature on Properties of ITO Film

当基片温度提高到550℃时，Raman光谱分析表明，样品为炭膜。

When the substrate temperature was increased to 550 ℃ Raman analysis showed that the deposits were carbon films .

用ECR多极场等离子体在室温基片上制备的具有C轴取向的ZnO薄膜

ZnO thin films with c-axis orientation prepared on the room temperature substrate by the ECR multipolar plasma sputtering method

溅射薄膜中的Ti含量随溅射功率增大明显减小，但Ni和Pd的含量略有上升。基片类型也影响溅射薄膜的成分。

When increasing sputtering power the Ti content in sputtering films decreases markedly while Ni and Pd content increases a little .

用于Si基片上外延BST薄膜的缓冲层的研究进展

Research Progress of Buffer Layers Used in Heteroepitaxial Growth of BST Thin Film on Silicon Substrate