热氧化

报道了利用低压金属有机物化学气相沉积技术生长纳米ZnS薄膜，然后，将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜。

In this paper , we report the photoluminescence from high quality nanocrystalline ZnO thin films . The high quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800 ℃, which are deposited by low pressure metal organic chemical vapor deposition technique .

顺-1,4-聚丁二烯的热氧化&Ⅳ.自催化过程中的有效支链反应动力学

The thermal oxidation of cis-1,4-polybutadiene & ⅳ . the kinetics of effective chain-branching reaction in the process of AUTOCATALYZED oxidation

热氧化制备的钯氧化物电极的组成与pH敏感性能

Composition and Sensitivity to pH of Palladium Oxide Electrodes Prepared by Thermal Oxidation

采用X射线衍射法对热氧化处理后的纯钛表面进行微观组织结构测试分析。

The surface microstructure of the treated titanium was analyzed by X-ray diffraction method .

H2O2热氧化降解硝基苯废水的机理和动力学

Mechanism and kinetics of thermal oxidative degradation of Nitrobenzene Wastewater by h_2o_2

本文采用热氧化法制备金属铱/氧化铱pH电极。

Iridium / Iridium Oxide pH electrode was prepared by using of heat oxidation technique .

磁控溅射和热氧化法制备ZnO纳米颗粒

Synthesis of ZnO Nanoparticles by Magnetron Sputtering and Subsequent Thermal Oxidization

热氧化硫化锌薄膜制备高质量纳米ZnO薄膜的表征

Identification of high quality Nanocrystalline ZnO thin films prepared by thermal oxidation

（Si，Er）双注入热氧化硅的光致发光

Photoluminescence from Si and Er Dual-implanted Si-rich Thermal Oxidation SiO_2 / Si Thin Films

采用SEM分析了C/PMR-15复合材料热氧化后材料破坏情况。

The failure of C / PMR-15 composite after thermal oxidation is analyzed by SEM .

热氧化温度对非平衡磁控溅射TiN镀层的影响

Influence of oxidation temperature on microstructure and properties of unbalanced magnetron sputtered TiN coatings

采用N2气体中退火或掺氯氧化能缩小和消除热氧化层错。

The oxidation-induced stacking faults can be reduced and eliminated by annealing in N2 gas or oxidizing in HCl-added O2 gas .

SiC热氧化SiO2的红外光谱研究

Infrared Spectroscopy of SiO_2 Film Grown on SiC by Thermal Oxidation

热氧化磁控溅射金属锌膜制备ZnO纳米棒

ZnO Nanorods Synthesized Through Thermal Oxidation of Metal Zinc Thin Film Deposited by Magnetron Sputtering

热氧化法制备纳米ZnO薄膜及其发光特性的研究

Study of luminescent properties on ZnO thin films prepared by thermal oxidation of ZnS thin films

热氧化纳米Zn制备ZnO厚膜及其气敏特性的研究

The Thermal Oxidated Formation of ZnO Thick Film Using Nanometer Zn Particles and the Gas Sensing Properties

用FTIR法对煤沥青热氧化过程中结构转变的研究

Study on structural transformation of coal tar pitch in thermo-oxidative processes by FTIR

ZnS低温热氧化制备ZnO薄膜及其物性的研究

Properties of ZnO Prepared by Thermal Oxidation of ZnS at a Low Temperature

用DSC法评价基础油和添加剂的热氧化安定性

Evaluation of thermal oxidation stability of base stocks and additives by differential scanning calorimetry

热氧化处理聚苯硫醚结构的FTIR研究

On Heat Treatment of Polyphenylene Sulfide Using FTIR

热氧化蒸发Zn膜制备ZnO的条件被优化。采用蒸发氧化法制备纳米ZnO。

The thermal evaporation and oxidation were optimized . Nanometer ZnO powder was prepared by evaporation - oxidation method .

发现碳酸钙可加速PE和PP的光氧化，但却抑制其热氧化。

It was found that filler calcium carbonate accelerated the photo-oxidation but retarded the thermal oxidation of both PE and PP.

热氧化法与PLD方法制备ZnO薄膜的特性比较

The Comparison of the Properties of ZnO Thin Films Fabricated by Thermal Oxidation and PLD

热氧化法与PLD法制备ZnO薄膜及其特性

Synthesis and Characteristics of ZnO Thin Films by Thermal Oxidation and Pulsed Laser Deposition Techniques

双层氧化硅（富硅氧化硅和热氧化硅）栅氧化层MOS场效应晶体管的研制

Fabrication of Silicon & rich SiO_2 and Thermal SiO_2 Dual Dielectric Gate Oxide MOSFET 's

闭管热氧化法生长GaAs自体氧化膜的AES和XPS分析

AES and XPS analysis of native oxide films on GaAs by thermal growth in a closed tube

（Si，Er）双注入热氧化SiO2/Si薄膜的表面结构及1.54μm光发射

Surface Structure and 1.54 μ m Light Emission of Silicon Plus Erbium Dual-Implanted Thermal SiO_2 / Si Thin Film

干燥HCl对热氧化生长SiO2的影响

Effect of dry HCI on thermally grown sio_2

采用加压示差扫描量热计法（PDSC）对大庆150SN及其吸附色谱分离所得15个镏分与加入不同量的各种添加剂后的热氧化安定性进行了研究。

The pressure differential scanning calorimetry ( PDSC ) was used to study the thermal-oxidation stability of Daqing150SN and its15 fractions obtained by chromatographic separation .

PB经硅氢加成后，热氧化温度及热交联温度均随加成率的增加而明显提高。

After hydrosilylation the temperatures of both thermal oxidation and thermal crosslinking were increased significantly with the increase of addition reaction extent .