正向特性

对硅PIN光电探测器的结构及电势分布作了详细讨论，同时讨论了其正向特性、反向特性和光敏特性。

The structure and potential distribution of silicon PIN photodetector are discussed in detail as well as the discussion on forward characteristics , reverse characteristics and light sensitive characteristics .

本文根据PN结理论提出用PN结正向特性各种变化趋势来直接监控工艺质量。

Trends to various changes in forward characteristics of P-N junctions are presented to monitor the process quality of silicon solar on the basis of P-N junction theory .

利用I-V正向特性提取PN二极管主要参数的研究

Study on the Extraction of PN Diode Parameters from Forward I-V Characteristics

通过对IGBT、二极管的特性进行仿真分析，对其正向特性曲线图进行分解得到相关的数组，推导出了相关的计算公式。

Making simulation and analysis of IGBT , diode characteristics with Matlab , we can get associated array by the forward curve diagram .

本文在对发射极开关晶闸管EST（EmitterSwitchedThyristor）正向特性二维数值分析的基础上，提出了EST正向工作时的五个区域。

Based on the two dimensional simulations , the partitioned five regions of the forward I-V characteristics for Emitter-Switched Thyristor ( EST ) have been proposed .

MPS结构的应用，在保留SBD正向特性的同时，大大提高了其反向特性，而碳化硅材料的应用更加强化了MPS的这一优势。

The application of MPS structure improves the reverse characteristics and preserves the forward characteristics of SBD . And the application of Silicon carbide enhances the advantage of MPS structure .

紫外敏感硅光伏二极管的正向特性

Forward characteristic of the silicon photovoltaic diode with sensitivity on ultraviolet

发射极开关晶闸管正向特性分析

Analysis of the Forward Characteristics for Emitter-Switched Thyristor

P~+掺杂浓度分布对硅半导体器件正向特性的影响

A study on the influence of p ~ + doping concentration distribution on the forward conduction characteristics of silicon semiconductor devices

用肖特基整流二极管势垒正向特性计算机回归分析法，可得到势垒高度、二极管串联电阻和理想因子等各种信息和有用数据，给肖特基二极管质量改进提供依据。

A computer regression analysis is made of the forward characteristics of the Schottky barrier diodes . Useful information and data including barrier height and series resistance were obtained , which can help improve the quality of the diodes .

通过对二极管实测正向特性曲线分段进行一元线性回归处理，证明了二极管伏安特性的数学表示公式，只适用于特性曲线的指数弯曲阶段，并不适用于整条曲线。

By the monadic linear regression treatment of the measured forward curve by its section , the mathematical expression equation of VA characteristics of diode is proved , which is only applicable to the exponential bending phase of characteristic curve , not to the whole curve .

PN结正向伏安特性曲线随温度的变化

Variation of positive volt-ampere characteristics of PN junction with temperature

pN结正向伏安特性的研究

Research on Positive Volt-Ampere Characteristics of PN Junction

介绍了在不同温度下，PN结正向伏安特性曲线的自动测量方法，讨论了PN结伏安特性与温度的关系。

The auto-measuring means of positive volt-ampere characteristics of PN junction at different temperature is introduced , and the relation of volt-ampere characteristics of PN junction with temperature is discussed .

采用正向交流特性结合I-V特性的方法，检测了激光二极管的串联电阻、理想因子、结电压和结电容与外加电压或电流的关系。

The dependence of series resistance , ideality factor , junction voltage , and capacitance on the applied voltage or current of laser diodes ( LDs ) is determined by examining forward AC behavior together with I-V characteristics .

并对实验结果进行分析模拟，理想因子为1.73，肖特基势垒高度为1.25V，实验表明，该器件具有较好的正向整流特性和较小的反向漏电流。

The measurements of the I-V characteristics of these diodes have been analyzed and simulated and the ideality factor has been found at 1.73 and the Schottky barrier height at 1.25 V. The diodes show good rectifier property and a low leakage current .

激光二极管正向电特性的精确检测

Accurate Measurement of Forward Electrical Characteristics in Laser Diodes

利用补偿方法测量二极管的正向伏安特性

Measurement of the voltage - current characteristic of forward direction of diodes by means of compensation method

提出了一种基于串联模式精确地检测半导体二极管正向电特性的新方法。

A new method to analyze the forward electrical characteristics of semiconductor diodes by using series mode is developed .

硅太阳能电池等效串联电阻会影响其正向伏安特性和短路电流，而对开路电压没有影响，另外串联电阻的增大会使太阳能电池的填充因子和光电转换效率降低。

The equivalent series resistance of silicon solar cell can influence its straight volt-ampere property and short-circuit current , but have no influence on open-circuit voltage .

在14&25K的温区里，出现正向伏安特性曲线交叉、击穿电压峰以及当正向注入电流恒定时正向电压随温度变化特性呈现非单调性。

There appeared in 14-25 K range the curves cross of formard voltage-current , breakdown voltage peaks and the non-monotonicity of forward voltage-temperature when forward current was constant .

关于pn结正向大注入特性

On the I-V Characteristics for High-Level Injection of pn Junctions

GaN基蓝光发光二极管正向电压温度特性研究发射极基极二极管

Temperature characteristics of the forward voltage of GaN based blue light emitting diodes

计算了YIG薄膜中传播的静磁正向体波特性，结果表明：在倾斜偏置磁场中沿不同方向激发的静磁波具有不同的辐射阻抗，这与垂直磁化情形明显不同；

It is indicated that under arbitrarily inclined magnetic field the radiation resistance of MSWs propagating in the different direction are not equal , which is obviously different from the case of normal magnetization ;

由金属-非晶态半导体-氧化物-半导体等4层结构组成的MSOS电容器，它的正向偏压C-V特性曲线有一个电容的最小值Cmin，它反映了a-Si：H薄膜的厚度d（？）

A kind of capacitor with four layer structures which consists of Metall-amorphous Semiconductor-Oxide-Semiconductor for short as MSOS capacitor . Its C-V characteristic curve has a minimums Cmin . The minimum Cmin of capacitor represents thickness da of a-Si : H film .

一旦所有的股东都对他们自己的属性进行了评分，那么评分会被记录，对于产品带有最大正向影响的特性会移动到列表的最顶端。

Once all of the stakeholders have scored his or her own attributes , the scores are tallied and the features with the highest positive impact to the product float to the top of the list .

仿真结果表明：等效并联电阻产生的漏电流会影响太阳电池的反向特性和正向小偏压特性，且并联电阻影响其开路电压，但对短路电流基本没有影响；

The simulation results showed that the leakage electric current produced by equivalent shunt resistance can affect the solar cell 's reverse property and the straight small bias voltage property , and the shunt resistance also can influence open-circuit voltage , but have no influ-ence on short-circuit current .

应用计算机测定PN结正向压降的温度特性

Measuring forward voltage drop characteristics of PN junction with temperature using computer

随着光纤光栅耦合系数的增加，激光器的增益阈值越小，输出功率越大；相移分布反馈光纤激光器的正向和反向输出特性与光纤光栅的相移点的位置有关。

With the increasing of the coupling coefficient , the gain threshold would decrease and the output power would increase , the directional output characteristics is decided by the location of the phase shift .