扩散电流

运用半导体的PN结扩散电流与电压关系特性，精确地测量了玻尔兹曼常数。

Based on the relationship between the diffusion current and voltage of PN junction , the Boltzmann 's constant is measured with high accuracy .

本文利用p-n结反向扩散电流的温度特性和借助于线性外推法，提出了一种确定绝对零度时禁带宽度的新方法。

Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation , a new method for determination of the energy gap at OK is presented .

传质系数k是考察反渗透等膜过程中浓差极化的重要参数。为了较确切地测定k值，本文建立一种采用特制多孔电极的扩散电流法。

The mass-transfer coefficient k is an important parameter for predicting the concentration polarization of reverse osmosis and other membrane separation processes .

本文从yau的模型出发，推导出了短沟道硅栅MOSFET的阈电压表达式及阈电压与温度的关系：并考虑短沟道MOSFET的扩散电流。

Expressions of threshold voltage of short channel silicon gate MOS-FET and the temperature dependence of threshold voltage were derived from Yaus model .

Mo-Ni离子浓度比大于2时扩散电流平台消失。

When the concentration ratio of molybdate salt to nickel salt was higher than 2 , the plateau of the limiting current disappeared .

溶解氧对A3钢片腐蚀有较大影响，随着溶解氧浓度的增大，氧的极限扩散电流密度将增大，氧离子化反应的速度也将加快，因而氧去极化腐蚀的速度要随之增大。

As the dissolved oxygen concentration increases , the limit of oxygen diffusion current density will increase , the reaction rate of oxygen ions will accelerate , and thus the oxygen depolarization rate of corrosion increases . 2 .

通过对发光二极管内部结构的研究，发现Nt（界面态陷阱密度）和扩散电流比率是影响发光二极管性能的重要因素，并与器件可靠性有密切关系。

Through the research of the internal structure of Light Emitting Diode ( LED ), we discovered that the interface trap density and diffusion current ratio are key factors determining the performance of LED , and they are also closely related to the reliability of LED .

其极限扩散电流密度与本文中定义的碘的未饱和度△m（I2），max成正比，后者是一个与通常所指的碘的不饱和度在意义和数值上都不相同的物理量。

The diffusion limiting current densities are directly proportional to the △ m_ ( I2 , max ), which is defined as unsaturated extent of iodine , and it is different in the definition and the value from the usual degree of unsaturation of iodine in the electrolyte solution .

为了更方便地判别环孔P-N结的漏电机制，本文根据扩散电流和产生&复合电流对温度的不同依赖关系，作出了两者相等时随组份的变化关系曲线。

According with the dependence of generation-recombination current and diffusion current on temperature , the characteristic and function are set up between temperature and composition which equate the generation-recombination current to diffusion current in that to differentiating the leakage mechanism of loophole P-N junction .

用极限扩散电流技术（LDCT）对竖直管内的液体单相流与气液两相流的传质特性进行了测量，经三传类比由测量结果获得了传热特性。

The characteristics of mass and heat transfer of single liquid phase and gas-liquid two-phase flow in a vertical tube were studied with limiting diffusion current technique ( LDCT ) and the theory of heat and mass transfer analogue .

碘离子阳极氧化扩散电流的研究

Some Studies on Anodic Diffusion Currents of Iodide Ions

两种单扫描极谱扩散电流方程及其统一性

The Consistence of Two Kinds of Single Scanning Polarographic Equation for Diffusion Current

在旋转电极上呈现出明显的极限扩散电流，电化学阻抗谱呈现一个压扁的半圆。

When the modified electrode is rotating , a distinct limiting diffusion current appears .

在模型建立过程，使用薄层电荷近似，能区分扩散电流和漂移电流；

Using the charge sheet method , the diffusion and drift currents are identified .

扩散电流法测定渗透膜过程中传质系数及其规律

Determination of Mass Transfer Coefficients and Their Behaviors in Permeable Membrane Processes by Diffusion Current Method

理论推导了扩散电流与液选的模型方程，得到了解析解。

Model equations of diffusion electric currents and liquid rates were established theoretically and solved analytically .

通过理论分析得到扩散电流和产生复合电流是实验芯片的主要电流机制；

Theoretical analyses show that the main current mechanisms of the diodes are diffusion current and gr current .

文章中使用的暗电流机制的模型由扩散电流、产生-复合电流、缺陷辅助隧道电流和直接隧道电流组成。

This model includes four current components , such as diffusion current , generation-recombination current , band-to-band tunneling current and trap-assistant tunneling current .

在不使用运算放大器的情况下，直接利用晶体三极管与数字式电流表测出扩散电流，可以得到较为准确的玻尔兹曼常量。

The diffusion current is measured using transistor and digital ammeter instead of operational amplifiers , and the Boltzmann constant is obtained accurately .

在靠近注入电极的地方扩散电流大于漂移电流，而在其它区域漂移电流大于扩散电流。

The diffusion current is the dominant component near the injection electrode , whereas the drift current dominates the rest region of the emission layer .

柠檬酸盐浓度达到2~3倍镍盐浓度时，扩散电流平台趋于稳定。

When the concentration of citrate salt was 2 ~ 3 times higher than that of nickel salt , the plateau of the limiting current tended to stability .

研究表明此种电池器件具有大的正向扩散电流、小的反向漂移电流，说明其具有典型的单向导电性。

Researches show that such hybrid solar cells have big positive spread current and small reverse current drift , suggesting the typical characteristics of p-n heterojunction , i.e. , one-way electrical conductivity .

结合极限扩散电流技术和同步数据采集方法，对鼓泡塔结晶器管内可能出现的流动型式及其传递进行了实验研究，发现用拟均相方法处理鼓泡流动将会带来较大误差；

Combining the limiting diffusion current technique and the synchronous data record method , the hydrodynamics and the transfer of several flow regimes that may occur in this crystallizer is investigated at first .

指出在这种体系中，阳极扩散电流不由碘离子向阳极的扩散速度所控制，而是由阳极电解产物碘由电极表面向溶液中的扩散所控制；

It is found that the anodic diffusion currents are not controlled by the diffusion of iodide ions toward the electrode , but by that of the product iodine from the electrode to the solution .

从暗∫&V特性拟合求得扩散电流密度分量、复合电流密度分量、结品质因子和串并联电阻等五个电学参数。

From the dark J-V curve fitting , the diffusion current density component and the recombination current density component , the junction perfection factor , the series and shunt resistance , etc. have been achieved .

在硫化氢环境中，氢扩散稳态电流随pH值的增加而降低，随着NH4+的质量浓度的增加而增加，且增加幅度随着pH值的增加而加大；

The steady state permeation current decreases with increasing pH value and increases with the concentration of aggressive NH ~ + _4 increasing .

极板对燃料扩散、电流收集等方面具有重要的影响，是DMFC的关键组成部件之一。

Polar plate , one of the key components of DMFC , has an important effect on mass transfer and current collection of the passive DMFC .

采用扩散极限电流技术（LDCT）与传热测定同时进行的实验方法分析了池核沸腾中的界面汽化热阱效应。

The method applying the Limiting Diffusion Current Technique ( LDCT ) and heat transfer measurement together is used to separate the effect of interfacial vaporization heat sink in pool nucleate boiling process .

异质结扩散模型电流传输理论研究&Ⅱ.一维半导体结边界上边界条件的统一理论

A Research on Current Transportation Theory of Heterojunction Diffusion Model ⅱ . United Theory of Boundary Conditions at One-Dimensional Semiconductor Boundaries

双极晶体管导通状态对功率纵向双扩散MOSFET静态电流-电压特性的影响

Effect of Bipolar Turn-On on the Static Current-Voltage Characteristics of Power Vertical Double Diffused MOSFET