扩散工艺

MOS控制晶闸管的三重扩散工艺研究

The Investigation of Triple Diffusion Process for MOS-Controlled Thyristor

N型衬底扩散工艺是目前衬底制备中的常用工艺，被广泛应用于三极管、MOS管等分立器件的加工工艺中。

1N-type substrate diffusion process is the preparation of the common substrate technology , and it is widely used in transistors , MOS tube and other discrete devices in the craft .

针对制造高压晶闸管p型杂质扩散工艺的不足，进行了开管式受主双质掺杂技术的研究。

The research of open-tube double acceptor mixing technique is carried out to overcome the disadvantage of manufacturing high-voltage thyristor p type impurity diffusion technique .

最佳时间最佳的扩散工艺参数是900℃×2h。

The optimum technical parameter is diffusion at 900 ℃ for 2 hours .

通过杂质扩散工艺实验，试制了不同p区扩散深度和不同基区宽度的半导体断路开关二极管，利用高能电子束辐照方法改变器件中的少子寿命。

The diffusion technology is used to fabricate the SOS device with different p-well depth and different base region width , and the irradiation method is used to shorten the minority carrier lifetime .

本文对MCT的核心工艺&三重扩散工艺进行了详细研究。

The key fabricating process of MCT-the triple diffusion is investigated .

本文描述了半导体断路开关（SOS）的制作及性能测试。制作方法采用普通二极管类似的扩散工艺，但其制作工艺的关键在于深结的扩散。

The fabrication process and characteristics of the Semiconductor Opening Switch ( SOS ) are reported in this paper .

用真空热压法制备了SiCAl层状梯度复合材料；采用热压扩散工艺，实现了不同SiC含量的复合材料间的有效连接。

The SiC / Al laminated graded composites were fabricated by vacuum hot-pressure method , and the effective joining among the composites of different volume fraction of SiC particles was realized by heat diffusion pressure .

PESC电池扩散工艺的改进及分析

On Improvement in the Diffusion for the PESC Solar Cell

以扩散工艺调整对制造过程的影响为依据，通过实例验证了扩散制造工艺调整可行性。最后，基于SOA框架开发了武器装备快速扩散制造原型系统，并在具体武器装备型号的制造中进行了验证。

On the basis of the manufacturing influence to process adjustment , the feasibility of REM process is verified by a case . ( 5 ) Weapon equipment REM prototype system based on SOA is developed , which is verified in manufacturing process of certain weapon equipment .

使用硼铝二氧化硅乳胶源研制出反向快恢复整流二极管，其反向恢复时间trr≤5μs，反向耐压＞1000V。介绍了该器件的结构特点及扩散工艺。

Using colloid SiO 2 source with boron and aluminum , the fast reverse recovery diode was made . Its t rr is shorter than 5 μ s and the inverse voltage is higher than 1000 V. The structure features and diffusive techniques are described in the paper .

熔化扩散工艺及其在气缸体上的应用

Development of Melting Diffusion Process and Application for Engine Cylinder Blocks

扩散工艺对铜合金粉末物理性能的影响

Influence of diffusion technique on physical properties of copper alloy powder

扩散工艺对渗铝钢循环氧化和剥落性能的影响机理研究

Effect of Diffusion on Cyclic Oxidation and Spalling Resistance of Aluminized Steel

基于工作流的扩散工艺调整模型研究

Research on the Proliferated Process Adjusting Model Based on Workflow

一种开管铝镓扩散工艺的研究

Research on an Open Tube Gallium - Aluminium Diffusion Technology

热浸镀铝钢扩散工艺参数的确定

Determination of technical parameters of diffusion treatment on hot dip aluminizing steel

扩散工艺对部分合金化青铜粉末烧结性能的影响

Effects of diffusion process on sintering properties of partial alloyed tin bronze powder

晶闸管铝镓闭管扩散工艺的计算机模拟

Computer Simulation of Al and Ga Sealed Tube Diffusion Process in Thyristor Fabrication

改进锻前高温扩散工艺对于节约能源、提高大型铸锻件的生产效率都有着重要的意义。

Improvement in diffusion annealing before forging is meaningful to energy saving and increasing productivity .

半导体器件开管扩散工艺

Open tube diffusive technique of semiconductor device

另外，采用铂扩散工艺成本较低，适合大批量生产。

In addition , platinum diffusion is suitable for large quantity production because of low cost .

硅集成电路制备中隔离扩散工艺条件的选择

The selection of technological condition of the isolation diffusion in the manufacturing of the silicon integrated circuit

提升温度扩散工艺被称为烧结，有时还辅之以外界的压力来达到目的。

An elevated temperature diffusion process referred to as sintering , sometimes assisted by external pressure , accomplishes this .

此种方法为电力器件其他杂质的扩散工艺过程的模拟提供了一定指导作用。

This way plays a role in the simulation model of technologic process of other power semiconductor devices ' dopants .

通过不同扩散工艺实验，研究了热浸渗铝钢的抗氧化和剥落性能及其机理。

The cyclic oxidation , spalling resistance and mechanisms of hot dip aluminizing steel were studied by different diffusion treatment .

并对隔离扩散工艺条件的选择进行了探讨，取得了较明显的效果。

We have achieved some good results in the research of the selection of the technological condition of the isolation diffusion .

若进一步改善铝背场及扩散工艺条件，有望达到14%的效率。

The conversion efficiency of 14 % is possible if the Al back surface field and the diffusion process are improved .

本文介绍两步硼扩散工艺，它对改善台面功率晶体管的性能极有帮助。

This paper introduces two steps B-diffusion technology , rt is very helpful to improve the properties of mesa power transistors .

同时介绍了传感器的压力量程计算方法、装配结构、扩散工艺、低温玻璃封接技术、球焊技术等研究成果，使传感器精度和长期稳定性显著提高。

It introduces the investigations for calculating method of measuring range , diffusion technology , seal of cryogenic glass and spherical welding , etc.