异质结双极晶体管

压缩空间频率的分级偏移方法高截止频率异质结双极晶体管的研制

CASCADED MIGRATION BY COMPRESSING THE SPATIAL FREQUENCY Development of High Cutoff Frequency HBT

早在1951年，肖克莱就提出了异质结双极晶体管的概念。

As early as the year of 1951 , Xiao Kelai had brought up the conception of HBT .

X波段功率异质结双极晶体管

X-band Power Heterojunction Bipolar Transistor

集电区阶梯缓变InGaAsP层的具有超高f＿（max）、f＿T的双异质结双极晶体管

Ltra-High f_ ( max ) and f_TI_nP / InGaAs Double-Heterojunction Bipolar Transistors with Step-Graded InGaAsP Collector

光辅助超高真空CVD系统制备SiGe异质结双极晶体管研究

Study on Fabrication of SiGe / Si-HBT by Photo-assisted UHV-CVD

讨论了X波段功率异质结双极晶体管（HBT）的设计，介绍了器件研制的工艺过程及测试结果。

This paper describes the design , process and measured results of an X band power HBT .

异质结双极晶体管（heterojunctionbipolartransistor简称HBT）是异质结电子器件重要的一种。

Heterojunction Bipolar Transistor ( HBT ) is one of important heterojunction electronics devices .

SiGe异质结双极晶体管基区渡越时间分析

Base Transit Time of Si / SiGe Heterojunction Bipolar Transistor

一种InP双异质结双极晶体管小信号物理模型及其提取方法

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

InP／InGaAsP异质结双极晶体管发射极条长及基区宽度的选择

The Choosing of Emitter Length and Base Width of InP / InGaAsP HBT

研究了国产SiGe异质结双极晶体管（HBT）60Coγ射线100Gy（Si）~10kGy（Si）总剂量辐照后的辐照效应及辐照后的退火特性。

The total-dose radiation effects and annealing characteristics of a SiGe HBT are studied .

本文主要关注氮化物基异质结双极晶体管（HBT）及其相关技术。

In this paper , nitride-based heterojunction bipolar transistor ( HBT ) and related techniques are discussed .

Si/Si（1-x）Gex应变层异质结双极晶体管（HBT）交直流特性的仿真研究

Study of Si / Si 1 - x Ge x Stained Layer Heterojunction Bipolar Transistors ( HBT ) by Simulating AC / DC Characteristics

异质结双极晶体管（HBT）热电耦合特性的准二维TLM法数值分析

Numerical Simulation of Electrothermal Coupling Properties for HBT by TLM Method with Quasi Two Dimensional Modes

提出一种求解异质结双极晶体管（HBT）小信号等效电路模型的解析方法。

This paper discussed an analytical method for determining the heterojunction bipolar transistors ( HBTs ) equivalent circuit model .

基于SiGeHBT（异质结双极晶体管）的物理模型，建立了描述SiGeHBT的大信号等效电路模型。

A large signal equivalent circuit model for SiGe HBT is established based on the physical model of the transistor .

si/Si（1-x）Gex/Si异质结双极晶体管中基区杂质外扩散与未掺杂Si（1-x）Gex结隔离层的影响

The Effects of Base Dopant Outdiffusion and Undoped Si_ ( 1-x ) Ge_ x Junction Spacer Layers Si / Si_ ( 1-x ) Ge_x / Si Heterojunction Bipolar Transistors

异质结双极晶体管（HBT）是光纤通信和无线通信系统中的关键器件之一，有着广阔的应用前景，对它的研究具有重要的学术意义和实际价值。

Heterojunction bipolar transistor ( HBT ) is one of the most important high speed devices in optical and wireless communication systems .

从器件I-V特性的角度，表征了射频功率异质结双极晶体管（HBT）的自加热效应。

I-V characteristics of the heterojunction bipolar transistor ( HBT ) are presented to account for self-heating effect of RF power HBT 's.

利用多晶硅发射极技术与分子束外延生长SiGe基区技术相结合，研制成适于集成的平面结构、发射结面积为3μm×8μm的SiGe异质结双极晶体管（HBT）。

A planar SiGe heterojunction bipolar transistor was fabricated using polysilicon emitter technology and SiGe base grown by Molecular Beam Epitaxy ( MBE ) .

AlxGa（0.52-x）In（0.48）P/GaAs异质结双极晶体管高温特性的计算分析

Analysis on High Temperature Characteristics of Al_xGa_ ( 0.52-x ) In_ ( 0.48 ) P / GaAs HBTs

通过优化InGaP/GaAs异质结双极晶体管（HBT）的材料结构和器件结构，采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术，研制了C波段InGaP/GaAsHBT功率管。

A C-band InGaP / GaAs HBT power transistor with an optimized material structure and device peripheral structure is designed and fabricated by base-emitter metal self-aligning , emitter ballasting , and an electric plated air bridge .

在对SiGeHBT（异质结双极晶体管）载流子输运的研究基础上，建立了包括基区扩展效应SiGeHBT发射极延迟时间τe模型。

Based on the analyzing and studying carrier transport of SiGe HBT ( heterojunction bipolar transistor ), a model of the emitter delay time τ _e , including base extending effect , is established .

设计并研制了共振隧穿二极管（RTD）与异质结双极晶体管（HBT）单片集成负阻逻辑单元。

We designed and made a monolithic integrated negative resistance logic unit , which is composed of resonant tunneling diodes ( RTD ) and heterojunction bipolar transistors ( HBT ) .

对适用于单片集成的DHBT（双异质结双极晶体管）的能带结构与结电流进行分析和研究。

The DHBT ( double heterojunction bipolar transistor ) used for monolithic integrated photoreceiver is analysed .

热电应力下Si/SiGe/Si异质结双极晶体管（HBTs）可靠性实验研究

Experimental Research on Reliability of Si / SiGe / Si Heterojunction Bipolar Transistors ( HBTs ) under Thermal and Electrical Stress

Si-SiGe-Si异质结双极晶体管的数字模拟

Numerical Simulation of Si-SiGe-Si Heterojunction Bipolar Transistor

本文正是在这种背景下，针对目前GaNHBT研究中存在的问题从理论和实验两个方面进行了探索。论文首先介绍了异质结双极晶体管的基本理论。

Under the condition , these problems , which exists in the research of GaN HBT are discussed from the view of theory and experiment . First , the paper introduces the basic theories of heterojunction bipolar transistor .

报道了Si-SiGe-Si异质结双极晶体管的数字模拟结果。

In this paper we report the results obtained from numerical simulation of Si-SiGe-Si heterojunction bipolar transistor .

异质结双极晶体管（HBT）是一种新型的超高速、微波与毫米波半导体器件，可以有效地解决同质结双极晶体管中高速度与高放大的关系。

The heterojunction bipolar transistor ( HBT ) is a novel superhigh speed micro - and milli-meter wave semiconductor device . It can achieve both high speed and high amplification , which is always a conflict in homojunction bipolar transistors .