应变量子阱

不同阱宽的InxGa（1-X）As/GaAs应变量子阱的压力行为

Pressure Behavior of In_xGa_ ( 1-x ) As / GaAs Strained Quantum Wells with Different Widths

CdTe/ZnTe应变量子阱的静压光致发光研究

Photoluminescence of CdTe / ZnTe Strained Quantum Wells Under Hydrostatic Pressure

利用K·P方法计算InGaAs/InP应变量子阱的能带

The Calculation of InGaAs / InP Strained Quantum Well Energy Bands

应变量子阱结构材料X射线双晶衍射摇摆曲线的测试与分析

Measurement and Analysis of Rocking Curves by X-Ray Double Crystal Diffraction for the Strained Quantum Well Materials

研究了直接耦合混合应变量子阱半导体光放大器SOA的噪声特性。

The noise character of strained MQW semiconductor optical amplifier has been studied in the paper .

InGaAs（P）/InP应变量子阱和超晶格的光电性质

Optoelectronic characteristics of InGaAs ( P ) / InP strained quantum well and superlattice

利用F-P干涉研究应变量子阱SOA的吸收性质

Absorption property of strain quantum well SOA by using F-P interference

p型GaN/Al（0·35）Ga（0·65）N/GaN应变量子阱中二维空穴气的研究

Research of two-dimensional hole gas in p-GaN / Al_ ( 0.35 ) Ga_ ( 0.65 ) N / GaN strained quantum-well

InGaAs／GaAs应变量子阱中的激子发光动力学

Effect of Alloy Disordering on Exciton Dynamics in InGaAs / GaAs Quantum Wells

低压MOCVD外延生长InGaAsP／InP应变量子阱材料与器件应用

InGaAsP / InP Strained Layer Quantum Well Materials Grown by LP-MOCVD and Their Device Applications

通过X射线双晶衍射和光致发光光谱（PL）方法研究了InGaAsSb/AlGaAsSb应变量子阱激光器外延材料的基本性质。

Through X-ray double crystal diffraction and photoluminescence ( PL ) method of the InGaAsSb / AlGaAsSb strained quantum well lasers basic properties of epitaxial material .

用MBE生长的长波长高速应变量子阱激光器

Strained Layer Quantum Well Lasers Grown by Molecular Beam Epitaxy for Longer Wavelength High Speed Applications

InGaAs／InGaAsP分别限制应变量子阱激光器的研制及其特性研究

Fabrication of InGaAs / InGaAsP Separated Confinement Strained-layer Multiple-quantum-well Lasers and the Research of Their Lasing Characteristics

四元混晶InGaAsP应变量子阱在组分调制下的能带转型

Tuning of the Band Lineups Type of the Quaternary Mixed Crystal InGaAsP Quantum Wells by the Variational Concentration

并将这两种技术的结合（称为选择区域量子阱无序技术）应用于脊形波导InGaAs／GaAs／AlGaAs应变量子阱激光器，研制出具有无吸收镜面的窗口结构脊形波导量子阱激光器。

This technology was applied to ridge waveguide InGaAs / GaAs / AlGaAs strained quantum well lasers and fabricated window structure lasers with nonabsorbing mirrors .

980nmInGaAs应变量子阱激光器及组合件

980 nm InGaAs Strained Quantum Well Lasers and Modules

InxCa（1-x）As/GaAs应变量子阱结构中热载流子分布的皮秒光谱研究

Study of picosecond spectra of hot carrier distribution in in _xca_ ( 1-x ) as / gaas strained single quantum well structures

InGaAs-GaAs应变量子阱的光学性质

Optical Investigation of InGaAs-GaAs Strained Layer Quantum Well Structures

实验中测定SOA在130mA偏置电流下的噪声指数为7.7dB，表明应变量子阱结构改善了SOA的噪声性能。

7.7 dB noise figure of SOA directly coupled with fiber in both ends at 130 mA bias current shows that the noise character of SOA is improved by strained quantum well structure .

980nm高功率应变量子阱阵列激光器的研制

Fabrication of 980 nm Strained Quantum Well Laser Arrays

并且在室温（20℃）下，AlInGaAs／AlGaAs应变量子阱激光器的特征温度高达200K，斜率效率为0.88W／A。

Under the room temperature , AlInGaAs / AlGaAs strained layer quantum well lasers ' characteristic temperature is as high as 200K , slope efficiency is 0.88W/A .

提出了一种多有源区隧道再生应变量子阱垂直腔面半导体激光器（VCSEL）结构，其微分量子效率可以大于1，并且可以得到阈值电流小、输出功率大的器件。

The multiple-active-region tunneling-regenerated strained-quantum-well vertical-cavity-surface emitting laser ( VCSEL ) with a more-than-one differential quantum efficiency is proposed . This multiple-active-region VCSEL is expected to have the improved performance of smaller threshold current and higher output power .

固定波长应变量子阱的设计与比较

Design and comparison of strained layer quantum well with fixed wavelength

热退火中应变量子阱的扩散激活能的研究

Study of diffusion energy of strain quantum well with thermal annealing

用光伏谱方法研究InGaAs/GaAs应变量子阱的性质

Photovoltaic investigation on the strained ingaas / gaas quantum well

1.3μm高增益偏振无关应变量子阱半导体光放大器

1.3 μ m High-Gain Polarization-Insensitive Strained Quantum-Well Semiconductor Optical Amplifier

915-980nm应变量子阱激光器新进展

Current advance of 915 - 980nm strained quantum well lasers

混合应变量子阱半导体光放大器噪声特性研究

Study on Noise Figure of SOA with Mix Strained MQW

InGaAs/GaAs应变量子阱半导体激光器的研究

Study on InGaAs / GaAs Strained Quantum well Lasers

高特征温度AlInGaAs/AlGaAs应变量子阱激光器的研究

The Research of High Characteristic Temperature AlInGaAs / AlGaAs Strained Quantum well Lasers