平面工艺

GaAs高温栅全离子注入平面工艺及GaAs数字二分频器

GaAs full Ion Implantation and Refractory Gate Planar Process and GaAs Digital Divider

平面工艺硅探测器的温度性能研究

Temperature properties study of the planar process Si detector

大面积平面工艺Si带电粒子探测器研制

Development of Large Area Si Detectors Based on Planar Technology for Charged Particles

平面工艺IGBT制作及导通压降的PIN模型计算

Planar IGBT Fabrication and Forward Voltage Drop Calculated by PIN Model

平面工艺Si-PIN低能X射线探测器研制

Development of low energy X-ray Si-PIN detectors based on planar technology

在此基础上探讨了平面工艺p-n结终端技术发展所面临的课题。

Problems confronted in developing planar termination techniques are investigated .

本文叙述了用平面工艺技术制备Si-PIN低能X射线探测器的工艺方法。

This paper describes the processing method of low energy X-ray Si-PIN detectors manufactured by planar technology .

平面工艺SnO2薄膜甲醛气敏元件的研究

Study of SnO_2 Formaldehyde Gas Sensor Based on Plane Technology

扩散硅力敏传感器CAD的技术包括3大部分：传感器平面工艺CAD；传感器芯片结构CAD；

The CAD technology of the Si diffused force sensor contains three parts , CAD of Planar processing , CAD f the chip structure and CAD of the sensor structure .

用分子束外延技术结合硅平面工艺研制成了GexSi（1-x）/Si异质结远红外探测器。

A Ge_xSi_ ( 1-x ) / Si heterojunction infrared detecton was fabricated by molecular beam epitaxy ( MBE ) combined with Si planar technology .

SiC是唯一可以氧化生长成SiO2的化合物半导体材料，这使得它可以运用Si平面工艺条件进行SiC器件的制造，特别制作MOS器件方面。

It is the only one compound semiconductor whose native oxide is SiO2 . Therefore , the SiC devices can be manufactured using the technology of the silicon processing , for example MOS devices .

以该薄膜为敏感体采用平面工艺制成的FET式气敏元件在常温下对乙醇蒸汽具有非常好的选择性。

The FET gas sensor fabricated with this kind of nanocrystalline film gate is found to be of good selectivity to the ethanol gas at room temperature .

采用微电子平面工艺，高真空电子束蒸发金属Au做肖特基接触，多层金属Ni、Ti、Ag合金在背底上做欧姆接触，制作出Au／n-4H-SiC肖特基势垒紫外光电二极管（Uv-SBD）。

With microelectronics plane technology , electron beam evaporation is used to deposit metal Au on the surface of n-4H-SiC to form Schottky contact , alloys Ti . Ni . Ag used to form Ohmic contact on the n + backside , the Schottky barrier ultraviolet photodiode has been fabricated .

利用氩离子束溅射技术在SiO2/Si衬底上淀积Ba0.8Sr0.2TiO3（BST）薄膜，该薄膜在氧气气氛中500℃退火处理30min，然后利用集成电路平面工艺将薄膜制作成叉指结构电容器。

Barium strontium titanate ( BST ) thin films deposited on a SiO_2 / Si substrate by argon ion-beam sputtering technique were annealed at 500 ℃ in oxygen atmosphere for 30 min , and then were fabricated integrated capacitors with interdigital structure by standard integrated-circuit technology .

利用硅平面工艺和氩离子束镀膜技术在SiO2/Si衬底上淀积一层厚45nm的钛铌酸锶钡（Ba1-xSrxNbyTi1-yO3）薄膜，制成Al/Ba1-xSrxNbyTi1-yO3/SiO2/Si结构平面型薄膜电阻器。

Ba_ ( 1-x ) Sr_xNb_yTi_ ( 1-y ) O_3 thin film ( 45nm ) deposited on a SiO_2 / Si substrate by the argon ion-beam sputtering technique is employed to fabricate planar thin-films resistors used in the IC standard technology .

半导体平面工艺在金属微细加工中的应用

The Application of Semiconductor Plane Manufacturing Technology to Metal Micromechanical Processing Technology

直线及平面工艺尺寸链解算浅析

Briefly on the Resolving of Dimension Chain of Craftwork of straight-line and Flat

平面工艺空间带电粒子探测器的研制

Development of planar technology space charged particle detector

传感器是依据硅微压阻效应原理，采用相关半导体平面工艺技术、微机械加工技术以及电子线路中信号调理与补偿技术，将压力敏感元件与调理电路一体化封装在壳体内。

Based on the techniques , the pressure sensor and modulating circuit were sealed within the shell .

利用半导体平面工艺在单晶硅片的不同方向上制作出四个电阻，并连接成一个惠斯通电桥。

Four silicon chip resistors are produced in different directions using semiconductor Planar process , and connected into a Wheatstone e-bridge .

描述了用平面工艺+离子注入技术制备新型空间带电粒子探测器的工艺技术及器件的特性。

The fabrication technology and performances of new type space charged particle detectors fabricated by using planar technology and ion implanted technique were described .

针对采用平面工艺的半导体器件的结构信息，通过单元排序和工艺流程生成两个步骤，生成一个可以实现输入目标要求的工艺流程。

A process compilation program is developed to generate process flows from schematic representations of planar semiconductor device by two steps : sorting the structures and generating the processes .

硅基微机械光调制技术使用常规硅平面工艺方法，制作较为简单，成本较低。

Silicon based Micro Electro Mechanical optical modulator is fabricated using conventional silicon processing techniques , so the modulator fabrication is simple and the cost of the modulator is exceedingly low .

a-C：F：H薄膜除了有较低的介电常数（占＜3）外，其热稳定温度还需要达到平面工艺的温度要求（400℃）。为此，我们进行了氮气气氛中a-C：F：H薄膜热退火的研究。

Thermal stability of a-C : F : H film better than 400 , which is designed in damascene process , should be required except for its low dielectric constant ( s < 3 ) .

讨论了基于深阱结构的提高器件击穿电压的技术。采用深阱结构的结终端技术，消除了平面工艺所产生的曲面结，从而使器件的击穿电压接近理想平行平面结的击穿电压。

Techniques for improving breakdown voltages using deep trench formed by RIE are discussed , A new trench termination technique is presented , which eliminates the cylindrical and spherical junction induced in the planar process .

为了加强本征约瑟夫逊结（简称本征结）与高频电磁波信号的耦合，我们通过平面工艺手段获得了厚度小于伦敦穿透深度的超薄单晶基底，其厚度小于150nm。

In order to increase the coupling between intrinsic Josephson junctions and high-frequency signal sources , we have successfully fabricated ultra thin single crystals , whose thicknesses are less than London penetration depth (~ 150nm ) .

产品适用于各种LCD与偏光片及其它产品平面贴合工艺后所产生的气泡消除。

The machine is used for eliminating bubble between polariser film and LCD glasses after laminating process .

介绍了聚酰亚胺（PI）作为硅双极型大功率开关器件芯片制造阶段表面钝化膜的工艺技术，该钝化工艺的工艺简单、成本低且能与普通的硅平面制造工艺兼容。

Author introduces a process technology that the Polyimide ( PI ) is used as the surface passivating of the Si bipolar high-power devices about chip madding phase . The process has the advantages of simple process , costing cheaply and being compatible with the common flat madding process .

立轴圆台平面磨削工艺的探讨

An approach to surface grinding process with vertical spindle and round table

基于光刻胶回流特性的平面化工艺

A Planarization Process Based on Reflowing Characteristic of Photoresist