深能级

深能级杂质Zn对n型硅半导体的补偿特性

Compensation Characteristics of Deep Energy Level Impurity Zn to n-Type Silicon

对Si（111）衬底上沉积的ZnO薄膜进行退火处理，薄膜的结晶质量得到提高，与深能级发射有关的缺陷浓度有所减少。

After annealing , the crystallization of ZnO thin film deposited on Si ( 111 ) substrate was improved , the defect concentration associated with deep energy level in the film could be reduced .

光电容法研究电子辐照GaP中的深能级

Studies on deep levels in electron-irradiated gap by photocapacitance method

GaP中电子辐照产生的深能级

Deep Levels Introduced by Electron Irradiation in GaP

γ辐照对GaP发光二极管深能级和亮度的影响

Influence of γ - ray Irradiation on Deep Level and Brightness of Gap LEDs

热处理单晶硅片中Fe玷污的深能级瞬态谱分析

DLTS Analysis on Iron Contamination of Heat-treated Silicon Wafers

离子注入CO2激光退火硅中的深能级缺陷

Deep-Level Defects in Ion-Implanted and CO_2 Laser-Annealed Silicon

深能级对GaAs（1-x）PxLED老化过程的影响

Effect of deep level on degradation of gaas_ ( 1-x ) p_x LED

在p型硅MOS结构Si/SiO2界面区中与金有关的界面态和深能级

Interface states and deep centers in au-doped MOS Structures

Si中S深能级的进一步研究

Further investigation of s induced deep levels in Si

镓铝砷LED中的深能级及其对光电特性的影响

Deep level in ga_xal_ ( 1-x ) as led and the influence on the optical and electrical properties

CO2激光退火是消除离子注入引入的深能级缺陷的有效方法。

The CW CO_2laser annealing is an effective method for removing deep-level defects induced by ion-implantation .

InP中和C带有关深能级的近红外光致发光

Investigation on C band infrared luminescence in indium phosphide

老化产生的深能级对GaP纯绿发光二极管发光效率的影响

The influence of deep levels due to the degradation on the luminescence efficiency of gap pure green light-emitting diodes

讨论了在n型GaAs半导体中掺入深能级杂质Cu所得到的补偿GaAs半导体材料特性。

And the compensation characteristics of N-type GaAs with deep level impurity Cu are discussed .

Si中Nd离子热退火行为的深能级瞬态谱研究

Study on Thermal Annealing Behavior of Nd Ion Implanted Silicon by Deep Level Transient Spectroscopy

形变Si，Ge中的深能级

Deep levels in strained Si and GE

（Pt及其硅化物）／硅界面的深能级研究

Study of Deep Level Centers at Pt / Si and Pt-Silicides / Si Interfaces

快速热退火（RTA）将在n型硅中引入深能级缺陷。

The deep-level defects are introduced into n-type silicon during Rapid Thermal Annealing .

注氮GaAs中的深能级及其对自由载流子的补偿

Deep levels and free-carrier compensation in Nitrogen-Implanted GaAs

SiO2-InPMIS结构的界面态和体深能级的研究

Study of interface states and bulk trap levels in the sio_2-inp MIS structure

半绝缘GaAs中的深能级

Deep Levels in Semi - Insulating GaAs

用Laplace谱研究缺陷深能级精细结构

Study of Deep-level Fine Structure by Laplace Defect Spectroscopy

结果表明，在700℃以下退火，退火气氛对ZnO膜的深能级发光影响较大；

These results show that there was large effect on deep-level emission of ZnO films by annealing ambience below 700 ℃;

深能级缺陷对半绝缘InP材料电学补偿的影响

Influence of deep level defects on electrical compensation in semi-insulating InP materials

In（0.53）Ga（0.47）As／InP异质结光电二极管的深能级

Deep level in In_ ( 0.53 ) Ga_ ( 0.47 ) As / InP heterojunction photodiodes

半磁性半导体Cd（1－x）MnxTe深能级的研究

Study on Deep Energy Level in Semimagnetic Semiconductor Cd_ ( 1-x ) Mn_xTe

MOS结构深能级瞬态谱的测试与分析

DLTS Measurement and Analysis of MOS Structure

用深能级瞬态谱方法研究赝晶Si/Ge（0.25）Si（0.75）/Si单量子阱的价带偏移

Valence band offset in pseudomorphic si / ge_ ( 0.25 ) sio_ ( 0.75/si single quantum well measured by deep level transient spectroscopy

改善薄膜的发光性能，在500℃退火处理过的ZnO薄膜PL谱中几乎看不到深能级发光现象；

The film which annealed over 500 ℃ almost cannot be seen any deep level emission in the spectra of PL.