小角度晶界

  • 网络low-angle grain boundary;Low angle grain boundary;low-angle boundary;small angle grain boundary
小角度晶界小角度晶界
  1. 采用电子背散射衍射(EBSD)分析CeO2模板层的均匀性,结果表明CeO2表面均匀致密,小角度晶界均在10度以下。

    Electron backscatter diffraction ( EBSD ) observation showed that CeO2 cap layer was dense and homogeneous . Small angle grain boundary was distributed in the range of less than 10 degrees . 3 .

  2. 认为这是由高密度位错(EPD)运动和反应所形成的小角度晶界的集合群。

    It is assumed that the cell structures are the clusters of small angle grain boundary caused by the movement and interaction of high density of dislocation , and the cell wall is the typical small angle grain boundary .

  3. TEM分析发现,超细晶铁素体内位错密度较低并有少量小角度晶界存在。

    The TEM analysis showed that there are low dislocation density and some low angle boundaries in ultrafine ferrite .

  4. 6H-SiC单晶中的微管和小角度晶界

    Micropipe and Low-angle Grain Boundaries in 6 H-SiC Single Crystal

  5. 小角度晶界铜晶体的循环形变及饱和位错组态ECC观察

    Cyclic Deformation Behavior and Observation of Saturation Dislocation Patterns of Copper Crystals Containing Low angle Grain Boundaries by SEM ECC Technique

  6. 造成这些变化的主要原因有:随AI含量的增加,小角度晶界所占的比例增大,合金的层错能升高,交滑移容易进行。

    The major cause for these changes was that the percentage for LAB increased and cross slip became easier as a result of decreasing stacking energy with increasing Al contents .

  7. EBSD晶粒图、晶界分布图分析表明低道次叠轧后材料局部出现细小晶粒和小区域小角度晶界。

    The grain mapping and crystal boundary distribution mapping of EBSD show that small grains and small angle crystal boundaries appear at some areas .

  8. 结果表明,退火后晶粒明显长大,晶粒呈近竹节结构,形成很强的{111}织构,并使小角度晶界增加,从而提高了Al互连线的电徙动可靠性。

    During annealing the grain size increased , leading to the development of a near bamboo structure , with an increase in the { 111 } texture and in the fraction of low angle grain boundaries , resulting in the improvement in EM reliability of the Al interconnects .

  9. 结果表明,合金中WC晶粒内部有着非常丰富的微观结构,例如,高密度的位错纠缠、堆垛层错、界面位错、超位错、小角度晶界,以及由位错交互作用形成的位错网络等。

    It is indicated that there are varieties of microstructure in WC grains , suchas dislocation tangling with high density , stacking faults , interface dislocation , superdislocations , small-angle grain boundry and dislocation networks formed by the interaction of dislocations .

  10. 在760℃,850℃和980℃温度条件下,研究了DD6单晶高温合金扭转小角度晶界的横向拉伸性能和断裂特征。

    The transverse tensile properties and fracture behaviour of the twist low angle boundary of DD6 single crystal superalloy were investigated at760 ℃, 850 ℃ and980 ℃ .

  11. 将菊池图的图像质量(IQ)和Hough转变强度,以及小角度晶界错配的统计数据作为应力敏感参数,研究了单晶材料系统中,微米~亚微米尺度的晶格畸变状态及局域弹性应变场。

    The strain sensitive parameters as Image qualities ( IQ ), the Hough transforms of the Kikuchi lines , as well as the small angle misorientation were used to evaluate the lattice distortion and the local elastic strain fields of the single crystals system at micron to submicron regions .

  12. 在800℃,850℃和900℃的温度条件下,研究小角度晶界对第二代单晶高温合金DD6持久性能的影响。

    The effects of low angle grain boundaries ( LABs ) on the stress rupture properties of second generation single crystal superalloy DD6 were investigated at800 ℃, 850 ℃ and900 ℃ .

  13. 研究了LiTaO3单晶的退火条件和小角度晶界,指出后者是影响晶体质量、导致晶体开裂的重要因素。

    The annealing conditions and low angle boundaries of LiTaO_3 single crystals havre been studied . It is pointed out that the low angle boundaries are important factors influencing crystal quality and leading to crystal cracking .

  14. 随着区熔速率的增大,小角度晶界数量明显增多;

    The small angle increase with the scan rate ;

  15. 最后对小角度晶界和亚晶界的位错网络结构、晶界类型等问题进行了探讨。

    Some problems concerning their structure of dislocation network and type were also discussed .

  16. 而当驻留滑移带能够连续穿过小角度晶界时,则不产生位错塞积和萌生沿晶界疲劳裂纹。

    However , low-angle GBs do not produce fatigue cracks because the dislocations can be transferred through the GBs by PSBs .

  17. 小角度晶界的产生速率与小角度晶界转变为较大角度晶界的速率趋向一动态平衡。

    There exists a sort of dynamic equilibrium between the formation rate of low-angle grain boundaries and the rate of changing into higher-angle grain boundaries .

  18. 小角度晶界向较大角度晶界不断转变的结果使大角度晶界数量不断增加,最终导致晶粒显著细化。

    The transformation from low angle grain boundaries to high angle grain boundaries makes the number of high-angle grain boundaries increase continuously and finally the grains are refined markedly .

  19. 从累积叠轧第一周期到第七周期,靠近层界面的不稳定的小角度晶界转变为稳定的大角度晶界,这导致了层界面的融合。

    The conversion of grain boundaries near the layer interface from the instable low angle grain boundaries to the stable large angle grain boundaries resulted in the integration of the layer interface .

  20. 超声振幅的增加对铝丝的再结晶有明显的促进作用,也会促进铝丝小角度晶界百分比的增加。

    It was found that the increase of ultrasonic amplitude would promote the recrystallization of aluminum wire evidently , and it could also increase the proportion of small angle grain boundaries in aluminum wire heavily .

  21. 用耦合模型对内耗数据的分析表明,小角度晶界内耗的基本机制是位错攀移,而大角度晶界内耗的基本机制是晶界扩散。

    An analysis of the internal friction data by a coupling model shows that the basic mechanism of GB internal friction for low-angle GBs is dislocation climb , while that for high-angle GBs is GB diffusion .

  22. 从离子轰击蚀刻后的氧化膜截面上,可以区分出由大角度晶界构成的柱状晶,以及在柱状晶中由小角度晶界构成的等轴晶。

    Some column grain with large angle grain boundaries can be observed on the section surface etched by ion bombardment , and some small equal axis grains with small angle grain boundaries exist in the column grains .