外延生长

Si（100）衬底上SiC的外延生长

Epitaxial growth of SiC on si ( 100 ) substrate

紫外光电材料ZnO的外延生长及特性研究

Epitaxial Growth of UV Optoelectric Material ZnO and the Study of Its Character

X射线衍射图谱显示Bi2Sr2Co2Oy热电薄膜沿c轴外延生长。

X-ray diffraction showed that films were extension growth along c-axis .

c轴取向PbTiO3外延生长的研究

Epitaxial Growth of c-Axis Oriented PbTiO_3 Thin Film

双n层GaP液相外延生长

Growth of Double n - layer LPE GaP

[Si（Pc）O]n晶体在NaCl单晶衬底上的外延生长

Epitaxial Growth of n Crystal on a NaCl Single Crystal Substrate

分子束外延生长的α-Sn/lnSb薄膜的X射线双晶衍射分析

X-ray double Crystal Diffraction Analyses of MBE Grown α - Sn / InSb Film

Cr，Ca∶YAG的液相外延生长

Growth of Cr , Ca ∶ YAG by Liquid Phase Epitaxy

用离子集团束技术在Si上外延生长GaAs

Epitaxial Growth of GaAs on Si by Ionized Cluster Beam

Ni单晶与外延生长In膜界面化合物的形成

Compound formation at the interface of thin in film epitaxially grown on Ni single crystal

（Ti，Al）N涂层在硬质合金基体上无外延生长；

The epitaxial growth is not found between ( Ti , Al ) N coating and substrate .

分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能

Structure and properties of InGaP / GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source

关于薄膜外延生长模型Fourier谱方法的数值分析

The Numerical Analysis of Fourier Spectral Method for the Epitaxial Growth Mode of Thin Films

750℃下用低压化学汽相沉积在Si上外延生长单晶SiC薄膜

Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750 ℃

ZnO薄膜的分子束外延生长及性能

MBE Preparation and Characterization of ZnO Thin Film

掺碳p型GaAs和InGaAs的金属有机物分子束外延生长

MOMBE growth of carbon doped p-type GaAs and InGaAs

Si（1-y）Cy合金的固相外延生长及其特性

Solid phase epitaxy of Si 1-y c y alloy and its characteristics

离子束外延生长（Ga，Mn，As）化合物

Growth of ( Ga , Mn , As ) Compounds by Ion Beam Epitaxy Technique

Si（1－x）Gex／Si量子阱发光材料的分子束外延生长及其结构研究

Molecular beam epitaxy growth and characterization of luminescent si_ ( 1-x ) ge_x / si quantum structures

等离子体增强分子束外延生长ZnO薄膜及光电特性的研究

Study of Optical and Electrical Properties of ZnO Thin Films Grown by Plasma-enhanced Molecular Beam Epitaxy

氢化物气相外延生长GaN材料及其物性分析

Growth and Characterization of GaN by Hydride Vapor Phase Epitaxy

确立了较理想的GaN外延生长温度等条件。

Proper growth temperature for the GaN epi - layer .

电子束外延生长Er2O3单晶薄膜

Epitaxial Growth of Er_2O_3 Films by MBE

GaAs（001）表面外延生长Mn薄膜的XPS研究

An XPS Study of Mn Thin Films Grown on gaas ( 001l ) surface

外延生长条件对GaN形貌的影响

Effect of Epitaxy Growth Conditions on Morphology of GaN

用侧向外延生长法降低立方相GaN中的层错密度

Reduction of Stacking Fault Density in Cubic GaN Epilayers via Epitaxial Lateral Overgrowth

GaN材料的射频等离子体分子束外延生长及其掺杂特性研究

Growth and P-type Doping Property of GaN by RF Plasma Molecular Beam Epitaxy

H2对UHV/CVD低温选择性外延生长Si（1-x）Gex的影响

Effect of H_2 on Low Temperature Selective Growth of Si_ ( 1-x ) Ge_x by UHV / CVD

硅基GaN薄膜的外延生长

Epitaxial Growth of GaN Film on Si Substrate

本研究对上述结果作了SEM及XRD等表征，并对外延生长机理进行了探讨。

In this work , SEM and XRD were performed and the epitaxial growth mechanism was studied as well .