动态随机存储器

动态随机存储器IC芯片制造技术的进展与展望

Advance and future prospect for fabricating technology of DRAM IC chips

4KMOS动态随机存储器

A 4K MOS Dynamic Random-Access Memory

这使它与常规动态随机存储器（DRAM）芯片一样处在同一个同盟之中。

That puts it in the same league as conventional dynamiC-RAM ( DRAM ) chips .

最近几年，随着计算机硬件和软件的快速发展，对先进的计算动态随机存储器（DRAM）模块的要求一直在迅猛增长。

The demands of DRAM are increasing rapidly along with the fast development of the computer in recent years .

因此高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）中有着广泛的应用前景。

High-dielectric-constant oxides are very desirable for the application in microelectronics , especially for the application in dynamic random access memories ( DRAM ) devices .

DDRSDRAM（双倍速同步动态随机存储器）作为SDRAM的升级版本，在高带宽解决方案中显示了它出色的性能。

As the updated version of the SDRAM , DDR SDRAM ( Double Data Rate Synchronous Dynamic Ram ) shows its excellent performance in high-bandwidth solutions .

DDRSDRAM（DoubleDataRateSDRAM，双倍数据率同步动态随机存储器）以其高速率、大容量和良好的兼容性在这些需求存储设备的领域得到了相当广泛的应用。

DDR SDRAM ( Double Data Rate SDRAM , Double Data Rate Synchronous Dynamic Random Access Memory ) has been widely applied in these areas of demand for storage devices for its high-speed , large capacity and good compatibility .

钛酸锶钡（BaxSr（1-x）TiO3，BST）薄膜具有优良的铁电、介电性能，在可调谐微波器件、动态随机存储器、红外探测器阵列等方面具有良好的应用前景。

Barium strontium titanate ( BST ) thin films possess good ferroelectric and dielectric properties . They are promising materials in application of tunable microwave devices , DRAMs , IR detector arrays and so on .

同步动态随机存储器（SDRAM）具有高速，大容量，价格低廉等优点，因而成为缓冲存储器的首选，但是SDRAM控制时序比较复杂，不能与DSP直接接口，这极大地限制了它的广泛应用。

The SDRAM has become the chief choice of the buffer storage because of its high speed , great capacity , and low price ; but due to its complex control timing , it cannot directly interface with DSP .

同步动态随机存储器SDRAM因其容量大、读写速度快、支持猝发式读写及相对低廉的价格而得到了广泛的应用。

Because Synchronous Dynamic Random Access Memory ( SDRAM ) has the advantages of mass storage , high speed , burst read / write and low cost , which is widely used in various fields .

随着微电子器件的尺寸进一步的减小，高介电常数材料在微电子器件中，特别是在动态随机存储器（DRAM）的应用中，扮演着重要的角色。

With the trend of size reduction of many microelectronic devices , high-dielectric-constant oxides have become increasingly important in microelectronics , especially in the application of dynamic random access memories ( DRAM ) devices .

过去几年，由于商品化动态随机存储器（dram）芯片价格持续走低，半导体行业遭受重创，迫使芯片生产商纷纷拓展更为复杂的产品。

The semiconductor industry has been hammered in past years by continued low prices for the commoditised dynamic random access memory , or DRAM , chips , which have pushed chipmakers to expand into more sophisticated products .

铁电钛酸锶钡（BaxSr（1-x））TiO3是一种具有十分优越铁电/介电性能的材料，在可调微波器件及动态随机存储器件方面有很好的应用前景。

Ferroelectric ( Ba_xSr_ ( 1-x )) TiO_3 ( barium strontium titanium oxide . BST ) thin films have excellent fer roelectric / dielectric properties and promising application prospect in tunable microwave devices and dynamic random ac - cess devices .

针对嵌入式应用的目的，在分析比较了各种动态随机存储器单元后得出了一种采用逻辑工艺、单元读出速度优化、数据保持时间延长的改进型2T增益单元。

According to embedded application , an reformed 2T gain cell structure featured logic technology , improved read speed and extended data retention is acquired by the analyse and comparision of several kinds of DRAM cells .

这种特别的工艺结构有别于传统的掩埋式动态随机存储器，因此其具有更为特殊的工艺特点。

The special process structure is different with traditional trench DRAM .

动态随机存储器中堆叠电容器结构的互连寄生电容模拟

Simulation of the Parasitic Interconnect Capacitance in the DRAM with the Stacked Structures

同步动态随机存储器的发展研究

Development Study of Synchronous Dynamic Random Access Memory

高介电常数薄膜广泛应用于动态随机存储器中。

High dielectric constant thin films have been used in high-density dynamic random access memories widely .

动态随机存储器栅极侧壁硅化钨残留造成的短路成为制约提高产品良率及可靠性的瓶颈。

Dynamic random access memory ( DRAM ) suffers from the bridge issue due to the WSix residue on gate sidewall , which is the bottleneck to enhancing the product 's yield and reliability .

而随着便携式移动电子设备的快速发展，嵌入式存储器的一个分支&嵌入式动态随机存储器又以其高存储密度和低功耗得到了越来越广泛的应用。

And with the rapid development of portable electronic devices , embedded Dram which is a branch of embedded memory is used more and more widely because of its high storage density and low power consumption .

台湾政府面临对台湾记忆体公司（TaiwanMemory）越来越严格的审查。为了改革台湾陷入困境的动态随机存取存储器（D-Ram）芯片业，台湾政府成立了台湾记忆体公司。

The Taiwan government is facing increasing scrutiny over Taiwan Memory , the company it established to reform the island 's struggling dynamic random - access memory chip industry .

其中受打击最严重的是动态随机存取存储器（D-Ram）芯片企业集团，它们已经在应对行业产能过剩问题。

Among the worst hit were D-Ram memory chip groups , which had already been dealing with industry overcapacity .

但即使进行了多年的整合，这个行业依然容易受到盛衰周期的影响——就算因为全球范围内动态随机存取存储器（D-Ram）制造商已经减少到三家，这些周期变得温和了一些。

But even after years of consolidation , the industry is still prone to boom-and-bust cycles - even if they are a bit gentler now that the number of global D-Ram manufacturers has dropped to three .

多数电脑中都要用到的基准动态随机存取存储器（d-ram）芯片的价格，已从2007年的逾6美元暴跌至今年1月的85美分。

Prices of benchmark dynamic random access memory ( D-Ram ) chips , which help power most computers , fell from a high of more than $ 6 in 2007 to just 85 cents in January .

同步动态随机访问存储器控制器的设计

The Design of SDRAM Controller