功率集成电路

功率集成电路（PIC）是指将高压功率器件与信号处理系统及外围驱动电路、接口电路、保护电路、检测电路等集成在同一芯片的集成电路。

PIC is a single chip including high voltage power devices and controlled ICs .

所谓高压功率集成电路（HV-PIC），是指将需承受高电压（需达数百伏）的特定功率晶体管和其它低压的控制电路部分兼容，制作在同一块IC芯片上。

HV PIC means the combination of specific power transistors that bear very high voltage ( up to several hundred volts ) and the controlling circuit biased by low voltage into a monolithic IC chip .

垂直双扩散结构MOS功率集成电路的设计

MOS Power Integrated Circuits with a Doubly Diffused Vertical Structure

一种SOICMOS/LDMOS单片智能功率集成电路

A Monolithic Smart Power IC Based on SOI CMOS / LDMOS Technology

功率集成电路中的高压电源和地之间的ESD保护

High Voltage VDD-to-VSS ESD Protection in Power IC

SOI高压功率集成电路中LDMOS的研制

Realization of LDMOS For High Voltage ICs on SOI

CMOSIC抗闩锁、抗静电的测试及防护措施的研究功率集成电路中一种抗闩锁方法研究

CMOS Integrated Circuits Test for Anti Latch up , Anti Electrostatic and Research of Electrostatic Precautionary Measures Research on a Method of Latch up Immunity in Power IC

该SOI高压功率集成电路芯片的实现，为进一步实现实用化的SOI高压驱动电路提供了有力的实验验证。

The realization of the SOI HVIC chip offers sound experimental evidence to a further step of applying the SOI HVIC into practice .

n型漂移区、p型SOl层、不连续N岛之间有很好的自隔离效果，省去了在功率集成电路中做深槽介质隔离。

Because the isolation effect among n-type drift region , p-type SOI layer , discontinuous n-islands is very good , there is no need to use deep trench dielectric isolation in the power Integrated Circuits .

脉冲宽度调制模式&Pulsewidthmodulation（PWM）是一种传统而被业界广泛采用的功率集成电路调制模式，它通过调节功率管导通时控制脉冲的占空比来调节输出电压。

Pulse Width Modulation ( PWM ) is a traditional and wide-used modulation for power IC . It regulates the output voltage by changing the duty cycle of the pulses on the switch power device .

飞速增长的单芯片智能功率集成电路（SPIC）市场，极大地推动了BCD工艺的发展。

The rapidly growing market of monolithic smart power IC 's ( SPIC ) greatly accelerates the evolution of BCD technology .

SOI（SilicononInsulator）高压集成电路具有无闩锁、漏电流小、抗辐射、隔离性能好等优点，已成为功率集成电路（PowerIntegratedCircuit）的重要发展方向。

SOI HVIC ( Silicon On Insulator High Voltage Integrated Circuit ) is the mainstream and trend of the Power Integrated Circuit ( PIC ) due to the improved no latch-up , reduced leakage current , perfect irradiation hardness , and improved insulation .

SOI（SilicononInsulator）技术具有低泄漏电流、低功耗、高速、低串扰和宽安全工作区等优点而在功率集成电路（PowerIntegratedCircuits，PICs）应用中备受关注。

The Silicon-on-Insulator ( SOI ) technology offers low leakage , low power consumption , high speed , low cross-talk and wider safe operating area . It has attracted a lot of attention for use in Power Integrated Circuits ( PICs ) .

而随着功率集成电路（PIC）的发展，许多公司都制造出了可以简化电路设计和克服脉冲变压器缺点的集成电路芯片。

However , as the development of power integrated circuit ( PIC ), many integrated circuit chips are produced in order to get rid of the disadvantages of pulse transformer and simplify the design .

SOI结构具有高速，低功耗，高集成度，抗辐照，易于隔离等优点，并且可以克服体硅材料的缺点，被广泛的应用在高压集成电路和功率集成电路中。

The advantages of SOI are high speed performance , low power dissipation , high integration , perfect anti-irradiation , improved isolation and so on . SOI can also overcome the disadvantages of the bulk silicon .

功率集成电路简称PIC，它被广泛应用于包括功率转换器、马达控制、荧光灯整流器、自动开关、视频放大器、桥式驱动电路以及显示驱动等多个领域。

Power Integrated Circuits ( PIC 's ) have been developed for applications including : power converters , motor controllers , fluorescent lighting ballasts , automotive switching , video amplifiers , bridge circuit drivers , display drivers , etc.

作为SOI（SilicononInsulator）高压集成电路的核心器件，SOI横向高压器件较低的纵向击穿电压限制了其在高压功率集成电路中的应用。

Silicon-On-Insulator ( SOI ) lateral high voltage devices are the key devices in SOI High Voltage Integrated Circuit ( HVIC ) . However , the low vertical breakdown voltage of SOI devices limits the application in high voltage and power integrated circuit .

功率集成电路将低压控制电路、保护电路和高压功率MOS器件集成在一起，显著提高了整机的集成度和稳定性，降低了成本。

Power integrated circuits integrate low voltage control circuits , protection circuits and high voltage power MOS . In this way , the performance and stability of the systems are greatly improved and the cost can be reduced at the same time .

研究结果表明，SOI结构大幅度改善了SiGeHBT的频率性能，适用于高速、高功率集成电路技术。

And the maximum oscillation frequency is improved by a factor of 2.7.The study demonstrates that SOI structure greatly improves the frequency performance of SiGe HBT 's , and so , it is applicable for high-speed and high power IC 's.

过热保护电路对于功率集成电路而言无疑是十分重要的。

Overtemperature protection circuit is very important for power IC .

用于智能功率集成电路中的LDMOS/LIGBT混合结构

A New LDMOS / LIGBT Hybrid Structure In SPIC

高压功率集成电路的混合模拟

Mixed-Mode Simulation of High Voltage and Power IC

功率集成电路中过热保护电路的设计

Design of overtemperature protection circuit in power IC

大功率集成电路芯片界面传热过程建模与仿真研究

Research on Modeling and Simulation of Boundary Heat Transfer Process of High-Power IC Chip

功率集成电路的发展概况

Survey of Development in Power Integrated Circuit

随着科技水平的提高，功率集成电路发展迅速。

With improvement of technology , Power Integrated Circuits ( PIC ) gets rapid development .

随着现代功率集成电路的发展，对功率器件的性能提出了更高要求。

With the development of PIC ( Power Integrate Circuit ), we request more for the performance of Power Devices .

采用专用的厚膜大功率集成电路，具高精度的稳压及恒流输出特牲。

Applied dedicated thick diaphragm and high-power integrated circuit to have high precision on voltage stability and constant current output .

单片式智能功率集成电路具有成本低、体积小、工作稳定等诸多优点，自20世纪90年代中期问世以来已得到广泛应用。

Monolithic Smart Power IC ( SPIC ) has low cost , small volume , stable work , and many other advantages .

在功率集成电路中，高压功率器件会对周围的低压电路产生串扰，从而造成电路失效甚至闭锁等现象。

In Power IC , crosstalk between high voltage power devices and low voltage devices can cause circuit operation failure and even latch-up .