功函数

UPS和功函数研究氧在电解银上的吸附

Adsorption of Oxygen on Electrolytic Silver by UPS and Work Function

第一性原理研究氧在Ni（111）表面上的吸附能及功函数

First-principles study of the adsorption energy and work function of oxygen adsorption on Ni ( 111 ) surface

CO在K/Cu（111）表面吸附的功函数变化

Work function study of CO and K coadsorption on cu ( lll ) surface

GaAs和Si的电子亲合势和功函数的比较研究

Comparative Studies of Electron Affinities and Work Functions for GaAs and Si

局域功函数图像及其在Cu（111）-Au/Pd表面的应用

Local work function measurement on Cu ( 111 ) - Au and Cu ( 111 ) - Pd surfaces

同时，高k阻挡层和大功函数的金属电极一起能够有效的抑制擦除饱和现象。

Meanwhile , the high k blocking layer along with the high work function metal electrode can effectively suppress the erase saturation .

Ag，Au，K吸附在W（001）表面上的功函数随外加电场的变化

Work function change of Ag , Au , K adsorbed on W ( 001 ) surface as a function of external electric field

功函数、AES和TDS研究CO在Ag-Pd合金上的吸附

Work function , AES and TDS studies of adsorption of CO on Ag-Pd alloy

测量固体表面功函数的几种Kelvin探针的研制

Development of different Kelvin probes for measuring the work function of solid surface

非晶NaI-Na2O-B2O3离子导体中钠沉积的AES和功函数研究

Investigation on Sodium Deposition in Amorphous NaI-Na_2O-B_2O_3 Solid Electrolyte with AES and Work Function Apparatus

功函数测量表明，分子态水（D2O）的吸附使表面功函数降低，解离态水（OD）的吸附则增加表面功函数。

It has been found that the adsorption of molecular water ( D_2O ) and dissociated water may decrease and increase the surface work function respectively .

再由UPS的二次电子阈值测定了功函数，从而求得GaAs的电子亲和势。

The electron affinity of GaAs can also be obtained by measuring the work function from the threshold of secondary electron energy distribution in . the UPS spectrum .

SBH与金属功函数呈线性关系（Cr金属除外），斜率为0.11。

The barrier height depends on the metal work function with slopes of 0.1 to 0.2 ( except metal Cr ) .

当覆盖度超过1ML后，功函数又有一定的增加。

With further increasing the coverage , there is a small increase in work function .

在各种透明导电氧化物薄膜中，ITO的应用最为广泛，这是因为ITO具有较低的电阻率、较高的功函数、在可见光区具有较高的透过率。

Among all the TCOs , indium tin oxide ( ITO ) has been widely used because of its low resistivity , high transmittance and high work function .

采用高频放电的方法对ITO电极表面进行了处理，并用接触势差法测量了处理前后的ITO表面功函数。

Surface of indium tin oxide ( ITO ) is treated using high frequency discharge , and the work function is measured with the method of contact barrier difference .

Al－SiOxNy－Si系统有效功函数差和界面特性的研究

Study of the effective work function difference and interface characteristics of al / sio_xn_y / si system

总能计算得出Cu（100）c（2×2）/H表面的功函数为4.47eV，氢原子在这一体系的吸附能为2.37eV（以孤立氢原子为能量参考点）。

The total-energy calculations showed that the chemisorption energy of atomic hydrogen in the case of Cu ( 100 ) c ( 2 × 2 ) / H surface was about 2.37 eV with respect to an isolated atomic hydrogen as reference .

由于TiN栅具有中间禁带功函数，在低的工作电压下，NMOS和PMOS的阈值电压都得到了优化。

The NMOS and PMOS threshold voltages can be optimized for operation at low supply voltage because of the near mid-gap work function of TiN gates .

另一方面，氧等离子体处理使ITO薄膜表面的富Sn氧化物进一步氧化，形成稳定的SnO，减少了ITO薄膜表面的氧空位和Sn~（4+）数量，使其功函数增大。

On the other hand , oxygen plasma treatment makes ITO film oxidized further , which decreases the number of oxygen vacancy and Sn ~ ( 4 + ) .

用扫描隧道显微镜（STM）对Cu（111）Au和Cu（111）Pd表面的局域功函数进行了研究。

In this paper , we report the local work function measurements on the Cu ( 111 ) - Au , and Cu ( 111 ) - Pd surfaces with scanning tunneling microscopy ( STM ) .

其中具有较低金属功函数的稀土金属（如Er、Yb等）已经被证明在N型衬底硅上可以形成非常低势垒的硅化物，是目前国内外关注较多下一代硅化物的备选材料。

Rare earth ( RE ) silicides with the lowest known work function ( WF ) were proved to have very low Schottky barrier height ( SBH ) on N-type silicon substrate , thus were widely focused .

结果表明要获得高的输出功率，透明导电膜TCO的功函数应该越大。

The results exhibit that work function of transparent conductive oxide ( WTCO ) electrode should be as high as possible to obtain high power output .

这种方法不需要考虑光学干涉层和OLED或PLED材料之间功函数匹配，以及在溅射过程中对有机层的损伤等问题。

The match of work functions of the light interference materials with those of OLED or PLED materials and the damages by sputtering deposition are avoided .

这归因于基底材料与TiO2的功函数不同，导致了界面电子的转移，功函数差决定了电子转移的深度。

This is attributed to the transfer of the electrons at the interface between the TiO2 and substrates , and the difference of work function determines the depth of the transfer of the electrons .

采用低功函数低电阻率的氮化铪薄膜作为氧化锌（ZnO）薄膜晶体管的电极，可以保证与有源层形成欧姆接触并获得较低的接触电阻。

If adapting Hf-N thin films with low work function and low electrical resistivity as source / drain electrodes in ZnO TFTs , the active layer ZnO and Hf-N could form ohm type contact , so as to obtain low contact resistivity .

薄膜LAPW方法的基函数研究与吸附系统功函数

The study of basis function in LAPW method and work function of overlayer-substrate system

初步分析原因是AZO薄膜的功函数略小于ITO薄膜的功函数，导致阳极空穴注入能力相对降低。

The reason is a preliminary analysis of the work function of AZO thin films slightly less than the work function of ITO thin films , leading to the anode hole injection capacity and relatively cheap .

对OLED的ITO阳极进行表面处理将改变ITO膜的表面化学组成及表面形态，这将直接影响ITO膜表面的功函数，从而影响ITO向有机层的空穴注入；

Surface treatment of ITO , anode of OLED will change its surface chemical composition and surface morphology which will directly influence its surface work function , and in turn affect its ability of hole injection .

OLED显示器件经常采用ITO膜作为有机发光的出射面和透明电极，要求ITO膜可见光透过率、导电性、表面平整度以及功函数都很好。

Because of better conductivity , higher transparency , smoother surface and higher work function , ITO ( Indium tin oxide ) films are used as the transparent electrodes which are the emitting side in OLED .