互补金属氧化物

n阱互补金属氧化物半导体工艺

N well cmos process

蓝宝石上互补金属氧化物半导体微处理机孔雀石绿-H2O2体系动力学光度法测定微量溴化物

Kinetic-spectrophotometric method for the determination of trace amount of bromide with malachite green-hydrogen peroxide

CMOS图像传感器是一种采用CMOS（ComplementaryMetal-oxide-semiconductor，互补金属氧化物半导体）工艺制造的图像传感器。

CMOS image sensor is a manufactured image sensor using CMOS ( Complementary Metal-oxide-semiconductor ) technology .

同时，还展示了用标准互补金属氧化物半导体（CMOS）技术，实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。

The perspective of micro / nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor ( CMOS ) technologies is also presented .

为了减小深亚微米互补金属氧化物半导体（CMOS）电路待机模式下的泄漏功耗，须寻找使电路泄漏功耗最低的最小泄漏向量（MLV）。

To reduce power leakage of deep sub-micron metal-oxide-semiconductor ( CMOS ) circuit in standby mode and search the minimum leakage vector ( MLV ) producing minimum leakage power , a linear programming ( LP ) model based on leakage power library was proposed .

介绍了一种红外焦平面阵列（IRFPA）互补金属氧化物半导体（CMOS）读出集成电路（ROIC）的研制方案，叙述了读出电路的电路原理及工作时序、电路参数设计、版图设计及工艺分析。

A development of infrared focal plane array ( IRFPA ) complementary metal oxide semiconductor ( CMOS ) readout integrated circuit ( ROIC ) is introduced . The circuit principle of ROIC , time sequence of multiplexer , circuit parameter , layout design and technology analysis are described .

这件工艺品用宝石装饰。蓝宝石上互补金属氧化物半导体工艺

The work is jeweled with precious stones . cmos on sapphire process

蓝宝石硅片集成电路蓝宝石上硅互补金属氧化物半导体工艺

SOSIC ( Silicon-on-Sapphire Integrated Circuit ) sos cmos process

互补金属氧化物半导体焦平面阵列输入电路1/f噪声的优选

1 / f optimization of a complementary metal oxide semiconductor focal plane array input circuit

硅栅自对准结隔离互补金属氧化物半导体

Silicon gate self aligned junction isolated cmos

互补金属氧化物半导体器件

Complementary metal oxide semiconductor device

硅栅互补金属氧化物半导体

Silicon gate complementary MOS

声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。

The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing , called complementary metal oxide semiconductor , or CMOS .

本论文所述设计中，基于0.6微米互补型金属氧化物半导体（CMOS）工艺，设计并实现一种10-bit高性能、低功耗的流水线模拟-数字转换器（ADC）。

Proposed in this thesis , base on 0.6 μ m CMOS technology , a 10-bit high performance low power pipelined analog-to-digital converter is designed and implemented .

为了实现10位高性能和低功耗的流水线模拟数字转换器ADC，提出了基于0.6微米互补型金属氧化物半导体（CMOS）混合信号工艺的电路设计方法。

In order to implement an analog-to-digital converter ( ADC ) with pipeline structure of 10-bit high performance and low power dissipation , a design method based on 0.6 μ m complementary metal-oxide-semiconductor ( CMOS ) mixed signal technology was proposed .

由于采用开关电流技术，该系统电路可以直接采用标准的数字互补型金属氧化物半导体（CMOS）工艺来实现，便于模、数混合集成，易于超大规模集成电路（VLSI）的制作。

Since the switched current technology is employed , this system is fully compatible with a standard digital Complementary metal oxide semiconductor ( CMOS ) technology , and is easily to be integrated in mixed analog digital system and implemented in very large scale integrated circuit ( VLSI ) .

该模数转换器已在标准数字互补性金属氧化物半导体工艺下实现。

The chip was fabricated in standard digital complementary metal - oxide - semiconductor process .

互补对称金属氧化物半导体阵列

Complementary symmetry MOS array

稳态、瞬态X射线辐照引起的互补性金属-氧化物-半导体器件剂量增强效应研究

Study of relative dose-enhancement effects on CMOS device irradiated by steady-state and transient pulsed X-rays

特别是HfO2和ZrO2被普遍认为是替代传统栅极材料SiO2成为下一代互补型金属-氧化物-半导体（CMOS）器件的高K栅介质材料，而HfO2薄膜在CMOS器件中已得到了成功应用。

Especially , they are regarded as the substitution of conventional SiO2 to be gate dielectrics in the next generation of complementary metal-oxide-semiconductor ( CMOS ) devices .

互补高性能金属氧化物半导体结构

Complementary high performance mos