自由电子密度

  • 网络free electron density
自由电子密度自由电子密度
  1. 当温度从25K升至295K时,石墨和纳米碳中的平均自由电子密度随温度的升高而下降:石墨晶体中的自由电子密度随温度的升高变化较小;

    As the temperature increases from 25K to 295K , the mean free electron density of nanocrystalline and graphite decrease : the magnitude of the decrease of the mean free electron density of nanocrystalline is higher than that of graphite .

  2. 纳米碳的平均自由电子密度低于石墨晶体。

    The mean free electron density in nanocrystalline carbon is lower than that in graphite .

  3. 而较高含量的Nb掺杂时,由于形成了新的晶体结构,合金基体及晶界处的自由电子密度减少,导致合金的脆性增加。

    In contrast , the densities of free electron at grain boundaries and in bulk decreased for high Nb doped alloy , due to the formation of the new ordering structure , which increases the brittleness of TiAl alloys .

  4. 用变分法给出了电磁波在等离子体球中的轨迹,讨论了等离子体自由电子密度分布与电磁波的返转点、目标的RCS缩减的关系。

    The electromagnetic wave paths in plasma spheres are given by calculus of variations . The relationship between the electron density in plasma spheres and the reversal of electromagnetic wave and the reduction of RCS of a target is discussed .

  5. TiAl合金晶界缺陷的开空间较大,晶界缺陷处的自由电子密度较低,金属键结合力较弱,材料易发生沿晶脆断。

    The large open defects occur on the grain boundary in TiAl alloy and the bonding strength of grain boundary is weak due to the low density of free electrons there , and the brittle fracture along grain boundary is prone to occur .

  6. 自由电子密度对等离子体隐身的影响

    Research on the Relation between the Free Electron Density in a Unmagnetized Plasma and the Stealth of Target

  7. 结果发现:电子温度的上升和自由电子密度的快速衰减都会影响体系粒子数反转的峰值和发生的区域。

    The theoretical results shows that both the rise of temperature and the rapid reduction of the desity of electrons can affect population inversion density and its area .

  8. 结果与结论用本方法计算的自由电子密度所求得的尾迹雷达散射截面比二维结果有较大改进;

    Results and Conclusion The calculated radar diffusion section , using the free electron density of the trail as its input has higher accuracy than the two dimensional results .

  9. 通过对高功率激光空气击穿的物理机理、电离机制的讨论,得到空气击穿过程中激光焦区内自由电子密度公式。

    Through discussing physical mechanism of optical breakdown in air caused by high power laser and ionization , the formula of free electron density in laser focus regime was attained .

  10. 对短脉冲激光作用水介质中引起光学击穿的机制进行了分析,通过自由电子密度速率方程的数值解确定激光的击穿阈值。

    The physical mechanism of optical breakdown induced by short-pulse laser in water was analyzed , and the laser breakdown threshold was determined with a numerical calculating method for the rate equation of free electron density .

  11. 在改进的平均原子模型的基础上,在中心场近似下用分波法处理自由电子密度分布函数,提高了电子波函数、电子占据数等原子参数的计算精度。

    On the basis of the improved averaged atomic model , the distribution of the free electrons is dealt with by the partial-wave method to improve the precision of determination of the energy level , electron populations and atomic inner energy .

  12. 结果表明:在等离子体中能够形成宽的类氖离子丰度大于50%的区域,并且具有大于1020cm-3的自由电子密度。

    The results show that a wide region in which the abundance of the neon-like ion is more than 50 % and the free electron density is more than 10 ~ ( 20 ) cm ~ ( - 3 ) is obtained .

  13. 对激光烧蚀透明电介质材料进行了数值模拟,得出激光的能量平衡分布、吸收的能量沿传播波方向的分布、吸收能量的空间分布、最大自由电子密度的变化。

    Simulate laser ablation of transparent dielectric material , get the results of distribution of the laser energy balance , absorbed energy distribution along the propagation direction of wave , the spatial distribution of energy absorption , changes in the maximum free electron density .

  14. 基极中空穴的密度小于发射极和集电极中自由电子的密度。

    The density of holes in the base is less than the density of free electrons in the emitter and collector .

  15. 一方面,在中间层环境中,冰晶通常会因电子依附而带上负电荷,从而降低自由电子的数密度。

    On one hand , ice particles are usually negatively charged by the attachment of electron in mesospheric environment , and thus reduce the number density of free electron .

  16. 照相明胶的自由体积空穴在电子密度空间限制了银离子还原为银原子的过程,并使得银原子的沉积生长以丝状的形式进行。

    The free volume holes in gelatin may restrain the process of the silver ion to be reduced to silver atom in the space of the different electron cloud density , therefor the production and deposition of silver atom occurred in filamentary form .

  17. 在富Ti的TiAl合金中加入V,V原子比Al和Ti原子能提供较多的自由电子参与形成金属键,因而提高了合金基体和晶界缺陷处的自由电子密度;

    When V are added into Ti-rich TiAl alloy , V atoms will provide more free electrons than both Al and Ti atoms to participate in metallic bonds , thus increasing the electron densities in the bulk and the grain boundary simultaneously .