半导体氮化铟(InN)的晶格振动
Lattice vibrational properties of semiconductor Inn
ECR-PEMOCVD适合低温外延生长氮化铟,氮化镓,氮化铝等薄膜。
ECR-PEMOCVD was utilized specially for low-temperature growth of epitaxy films of InN GaN , and AlN .