氮化铝

c轴定向氮化铝薄膜的制备

Preparation of c-Axis Oriented AlN Film

基于MATLAB的氮化铝和铜界面热阻仿真

Simulation of Interface Thermal Resistance Between AlN And Cu Based on MATLAB

氮化铝基板与Cu和Al的接合及其表面改质效果

Joining of aluminium nitride substrate with copper and aluminium and effect of surface modification

氮化铝结构的高温Raman光谱分析

Analysis of the Raman Spectra of Aluminum Nitride at High Temperature

SiC晶须－氮化铝分散工艺的研究

The Study on the Dispersion Technique of SiC Whisker and AIN

复合助剂Y2O3-CaC2对氮化铝陶瓷热导率的影响

Influence of compound additive Y_2O_3-CaC_2 en the thermal conductivity of AIN

Y2O3对氮化铝陶瓷燃烧合成致密化及组织性能的影响

Effect of additive Y_2O_3 on microstructure and performance of AlN ceramic

MEMS封装用氮化铝共烧基板研究

The Study of Aluminum Nitride Co-fire Ceramic Substrate for MEMS Package

蓝宝石/氮化铝衬底上SiC外延薄膜的X射线衍射分析

Analysis of the SiC thin film epitaxy on the sapphire / AlN compound substrate by X ray diffraction

氮化铝和莫来石陶瓷衬底的SIMS和XRD研究

Studies of AlN and Mullite Ceramic Substrates by SIMS and XRD

氮化铝（AlN）陶瓷是一种性能优良的高技术陶瓷。

Aluminum nitride ( AlN ) ceramic is a kind of high-tech.

氮化铝（AlN）陶瓷的特性、制备及应用

Properties , Fabrication and Application of Aluminum Nitride ( AlN ) Ceramis

纳米氮化铝的PL谱研究

PL Spectra Study on AlN Nanocrystals

氮化铝（AlN）是一类重要的宽带隙Ⅲ－Ⅴ族化合物半导体材料，其晶体结构为纤锌矿型，同ZnO的晶体结构相同。

AlN is an important ⅲ-ⅴ compound semiconductor material with wide band-gap , which has wurtzite structure too .

ECR微波等离子体溅射沉积氮化铝的研究

Study of AIN Film by ECR Microwave Plasma Sputtering Deposition

按照VS生长方式，在均衡生长条件下，生长为本征结构的氮化铝晶须。

In equilibrium condition , AlN whiskers with hexagonal structure , the structure of AlN , were grown via VS mechanism .

氮化铝对Sialon陶瓷性能的影响

Effect of AlN on Properties of Sialon Ceramics

结果表明：铝合金表面改性层中形成了弥散强化的氮化铝（AlN）相；

X-ray photoelectron spectroscopy ( XPS ) results reveal that aluminum nitride ( AlN ) phase exists in the surface modified layer .

通过透射电子显微镜电子衍射和X射线单晶衍射分析，确定了氮化铝单晶常见的生长惯习面，并分析和讨论了氮化铝晶须形态与氮化铝晶体结构与生长惯习面的关系。

The common growth habit plane of AlN crystals was confirmed by means of electronic diffraction and X-ray diffraction , and the relationship between the morphologies and crystal structure and growth habit plane was investigated .

氮化铝（AlN）陶瓷是最理想的高导热基板和封装材料，可广泛应用于高功率器件、电路和组件。

Aluminum Nitride is an ideal substrate and packaging material applied in high power devices , circuits and modules due to high thermal conductivity .

氮化铝（AlN）是非氧化性高功能陶瓷材料，具有许多优异的物理化学性质，日益被人们所重视。

Aluminum nitride , the material of non-oxidative high preformance ceramics , is receiving increasing attention due to its physical and chemical advantageous properties .

氮化铝（AlN）和碳化硅（SiC）一维纳米材料由于其独特的电子结构和优异的物理化学性质使其在生物医学领域有着广阔的应用前景。

Owing to their unique structural and amazing physical & chemical properties , the AIN and SiC quasi-one-dimentional materials have broad prospects in the field of bio medicine .

综合排水法测定的试样高的致密度以及SEM观察到的致密的结构，证明使用SPS技术制备的氮化铝陶瓷基本上满足陶瓷透明的几个必要条件。

Together with high density measured by the Archimedes method and consolidated structure viewed by SEM , demonstrated that the sintered samples basically met with transparent ceramics sintering conditions .

应用美国雷克公司TN－314氮测定仪步进升温的特性，测定了低碳铝镇静钢中氮化铝所含的氮。

Nitrogen content in the aluminum nitride of low carbon Al Killed steel was measured using U.S.TN-314 nitrogen measurement meter with a feature of stepping-up temperature rise .

氮化铝单晶薄膜的ECR-PEMOCVD低温生长研究

Study on low-temperature growth of AlN single crystal film by ECR-PEMOCVD

研究了铜与氮化铝陶瓷直接键合的可行性，运用扫描电镜（SEM）、电子能谱（EDX）对键合机理作了一定的分析和探讨。

In this paper , the possibility of copper direct bonding to aluminum nitride substrate is studied , and the bonding mechanism is investigated by means of SEM and EDX .

采用X射线衍射及扫描电镜方法，从微观角度研究了氮化铝（AlN）对Sialon陶瓷性能的影响.结果表明：AlN对α－Sialon的生成有促进作用；

Effect of AlN on properties of Sialon ceramics has been studied using x ray diffractometer and SEM method . The results show that AlN is effective for getting α Sialon .

氧化铝（96%，99%）、氧化铍和氮化铝陶瓷的高频损耗很低，是优良的微波和RF电路用基板。

With very low loss at high frequency , alumina ( 96 % , 99 % ), beryllium oxide ( BeO ) and aluminium nitride ( AlN ) ceramics are excellent substrates for microwave and RF circuits .

采用直流磁控溅射法在石英衬底上制备了氮化铝（AlN）薄膜。用X射线衍射仪分析了薄膜结构。

The structure and optical properties of aluminum nitride thin film deposited on quartz substrate by using a direct current magnetron reactive sputtering system were studied by X-ray diffraction , spectroscopic ellipsometry and ultraviolet-visible spectrometry .

本文主要研究了AlN薄膜的制备工艺对其结构、光学及高温抗氧化性能的影响规律，为将氮化铝用作金刚石红外增透及抗氧化膜系奠定基础。

Researches of this paper mostly concentrate on preparation of AlN films and the functions of experiment parameters on films structure and optical properties and high temperature anti-oxidation properties etc.