杂质浓度

用C-V法测试Cd在InSb中扩散层的杂质浓度及其分布

Test on Impurity Concentration and Profile of Cd Diffusion in InSb By Using C-V Method

用真空紫外光谱研究HL-1装置上氧杂质浓度和输运

Study of oxygen impurity concentration with VUV spectroscopy on the HL-1 device

超突变结变容二极管的杂质浓度分布及n值

Distribution of Impurity Concentration and n Value for Hyperabrupt Varactor

As~+/N2~+组合离子注入Si的损伤退火及杂质浓度分布

Damage Annealing and Impurity Density Distribution of As ~ + / N_2 ~ + Co-Implantation Si

一种反求杂质浓度的数值方法&基于CV数据的逐点反求多次循环法

A Point by Point Multiple Sweeps Numerical Algorithm for Dopant Profiling Based on CV Data

叙述了利用真空紫外光谱确定HL-1装置杂质浓度的方法，详细报告了用于解释光谱测量的杂质输运模型SITCODE。

The impurity concentrations in HL-1 were determined by VUV spectroscopy .

用单能慢正电子束流作为探针，测量了P型Si中不同B杂质浓度的正电子湮没S参数和正电子能量的函数关系。

In order to study how impurities effect the parameters of positron spectroscopy , a series of Si crystals with different impurity concentrations have been investigated by using slow positron beam .

双汞探针C-V法测试硅材料杂质浓度分布

Using a Pair of Mecury Probes C-V Method to Test for Impurity Concentration Distribution

实验结果表明：脉冲激光辐照之后补偿杂质浓度增加，补偿杂质磷分布发生变化，杂质补偿度大于7%的样品在被激光辐照的区域较容易转变为n型导电。

Experimental results show that p-type silicon crystals with phosphorus impurity compensation higher than 7 % are susceptible to inversion by pulsed laser irradiation when the amount of impurity compensation increases and the distribution of impurity compensation changes .

以LDD结构的NMOS器件为例进行了二维工艺仿真，得到了NMOS器件的二维剖面结构、杂质浓度的等值分布描述以及相应的电学特性。

Two-dimensional section structure , profiling of impurity concentration and electrical characteristics of NMOS are gained .

杂质浓度对槽栅PMOSFET抗热载流子特性的影响

Influence of Doping Density on Hot-carrier-effect in Grooved Gate PMOSFET

借助于电学及质谱分析方法测定了掺Te，及未掺杂InSb晶体横截面上的杂质浓度分布。

The impurity distributions on the cross-section of Te-doped and non-doped InSb single crystals are determined by means of Hall technique and mass-spectrum analysis .

尤其是阳极铜中的As、Sb、Bi在电解液中的分配比高，致使电解液中杂质浓度居高不下，电解液净化脱杂质压力大。

Especially most of As Sb and Bi coming from anode copper are distributed into electrolyte , which leads augment of consistency of impurity and increase burden of purging electrolyte .

Al2O3膜在磷酸中的最小腐蚀速率（或最佳的~（75）As~+杂质浓度）能根据实验结果和类高斯离子射程分布得到。

A minimum corrosion rate , or a optimized As doping concentration , of Al_2O_3 film merged into phosphoric acid solution is obtained according to the experimental results and Gaussian like As ion range distribution .

据此，由实验可求出非故意掺杂的硅分子束外延层的杂质浓度为8.0×10~（14）cm（-3）。

Based on the theoretical analysis and experimental measurement , the impurity concentration in unintentionally doped n-type MBE layer was determined to be 8.0 ? 10 ~ ( - 14 ) cm ~ ( - 1 ) .

利用阳极氧化法对半导体材料逐次去层，采用四探针法测量其每层的电阻率及相应杂质浓度，可得出半导体材料的杂质分布N（x）。

Semiconductor material is removed layer by layer with anode oxidation method . Resistivity and relevant impurity concentration in every layer is measured with four point probe method . The impurity distribution of semiconductor material N ( x ) is obtained .

首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。

The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time .

由于p~+区内杂质浓度的分布，在扩散区中存在十分强的自建漂移场，因而光生载流子将在自建场的作用下漂移进pn结内。

Because of the profile of doping density in p + region , there exists a very large build-in drift field in diffusion region , by which photoproduced carriers are drifted into pa junction .

研究了MSF模型的建立与考查、不同杂质浓度下的回收率等。

The studies also includes the setting up and validity testing of the MSF model , the recovery of impurities at various concentrations , etc.

研究了同时掺有Mn和Er的ZnS：Mn，Er薄膜在脉冲激发下场致发光的衰减常数与杂质浓度的关系。

The EL of ZnS : Mn , Er thin films doped simultaneously with Mn and Er is excited by a pulsed electric field , and the decay constants of Mn emission are found dependent on Er dopant concentration .

本文研究了4mm波段硅雪崩二极管剖面的杂质浓度分布。测量并讨论了研制器件的外延层杂质分布特性，和器件杂质分布及其对器件性能的影响。

In this paper , the impurity profile of the 4 mm band silicon avalanche diode is studied by means of the characteristics of the Schottky barrier .

结果表明N2~+/As~+组合离子注入单晶Si的应变分布曲线为单峰，位于杂质浓度分布曲线的双峰之间，靠近重离子峰。

And the lattice strain distribution were compared with the impurity density distribution , the result indicates that the lattice strain distribution curve of N2 + / As + compound ion implanted Si has a peak between two peaks of the impurity density distribution curve near the left peak .

本文主要研究了基于CV特性的半导体杂质浓度分布的方法，并将其用于测量硅／硅直接键合SDB硅膜的厚度。

The method of seeking semiconductor impurity consistency distributing based on CV character is researched which is used in the measurement of SDB silicon film 's thickness formed by silicon and silicon direct chip bonding .

利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/（C2）-V和1/（C3）-V关系图。

The formula for calculating the effective impurity concentration in the abrupt junction , the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction .

实验考察了吸附温度、工作压力、杂质浓度、流速及床层高度等因素对H2O和CO2单吸附及共吸附的吸附容量及转效时间的影响，获得了最佳运行参数。

Experimental data at different concentration , flow rate , adsorptive temperature , pressure and bed depth are obtained from isothermal adsorption tests in order to examine the effects of these parameters on adsorption dynamic and for the optimal parameters selection of adsorption process .

采用无氧的多晶硅扩散掺杂工艺制作SCB芯片能保持电阻稳定一致，能满足阻值要求，而且这种扩散工艺导致芯片杂质浓度的梯度正好有利于SCB点火装置发火能的降低。

SCB chips by the doped process with oxygen-free silicon diffusion may keep resistance stable and consistent , and impurity concentration gradient helps to decreasing the ignition energy of SCB igniting device .

在激光微细加工中，激光曝光区的温度对激光诱导扩散生成p-n结的结深、杂质浓度的分布和激光辅助合金生成欧姆接触的接触电阻等具有决定性影响，必须准确测定。

In laser assisted microprocessing , the temperature of the spot irradiated by laser has a tremendous impact on the distribution of impurity concentration , the depth of p-n junction , the resistance of ohm contact and so on .

在GaAs低场电子迁移率解析模型的基础上得到了纤锌矿GaN低场电子迁移率的解析模型，该模型考虑了杂质浓度、温度和杂质补偿率对低场电子迁移率的影响。

Based on the analytic low field electron mobility model of GaAs , a new analytic low field electron mobility model of wurtzite GaN is presented . The new model accounts for the dependencies of dopant concentration , temperature , and impurity compensation ratio on low field electron mobility .

测试了国产和美国Cree公司生产的n型6H-SiC低温下的电学参数，包括电阻率、迁移率和自由载流子浓度，并用FCCS软件数据拟合分析得到两种SiC的杂质浓度和能级。

Electric parameters including resistivity , mobility , and free carrier concentration are measured at low temperatures for n-type 6H-SiC from China and Cree corporation . Their impurity concentration and levels are obtained from the fitting data of FCCS .

为了提高转移效率，CCD移位寄存器采用埋沟CCD，并且发现，降低埋沟中的杂质浓度是提高器件在77K液氮工作温度下的转移效率的一种有效方法。

In order to improve the transfer efficiency , CCD shift register is designed with buried channel CCD . Reducing the impurity concentration in the buried channel is found to be an effective method of improving the transfer efficiency at the liquid nitrogen operating temperature ( 77K ) .