双极性晶体管

基于Si/Si（1-x）Gex/Si异质结双极性晶体管的微波功率器件电流密度的数值拟合计算

A Numerical Method for Correlating Current Density of the Microwave Power Device Based on Si / Si_ ( 1-x ) Ge_x / Si

通过伴热电源控制器输出脉宽调制（PWM）信号，控制绝缘栅双极性晶体管（IGBT）逆变电路输出方波交流电，利用集肤效应原理对管道进行伴热。

The heat-ing power controller outputs PWM signals to control the IGBT inverter , which outputs alternating cur-rent . Pipeline is heated under the skin effect .

介绍了绝缘门极双极性晶体管（IGBT）的基本结构、工作原理、开关特性，以及在焊接逆变器中的应用。

The paper introduces the basic structure , working principle and switching feature of IGBT and its application to the converter used for welding .

提出了一种把汽车点火系统的初级线圈电压注入端的绝缘闸双极性晶体管（IGBT）作为一种开关模式电源并对其工作时产生的传导干扰进行测量。

A new way to measure the conducted electromagnetic interference , which regards the IGBT of injected port of primary winding in automobile port fire as a power supply working in switch model , has been provided .

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor ) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor ) etc. as substitute for hydrogen thyratrons .

首先采用三相桥式全控电路组成VSC，VSC的开关器件采用绝缘栅双极性晶体管（IGBT），门极信号按SPWM的方式产生。

Firstly , three-phase bridge full-controlled circuit is adopted to constitute the converters , in which IGBT are employed as the switch components , and the gate-firing signals of IGBT are obtained by use of SPWM method .

该模型考虑了载流子的速度饱和现象和寄生双极性晶体管的影响，获得了开态下LDMOS漂移区中的电场分布。

The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor . As a result , electric field profile of n drift in LDMOS at on state is obtained .

双极性晶体管等效电路的教学实践

Teaching Practice on Equivalent Circuit of Bipolar Junction Transistor

对于双极性晶体管，由于自身存在的自加热现象，严重地影响着器件的特性。

Bipolar junction transistor ( BJT ) has the self-heating phenomena , which seriously affects the properties of transistor .

本文应用零极子等效为运放及双极性晶体管电路的模型，阐述有源网络的设计方法及其应用。

This paper describes a method of designing active networks by using nullor equivalents as models for op-amps and bipolar transistor circuits .

双极性功率晶体管稳定热斑出现过程的研究

Study of the process of producing stable hot spots in bipolar power transistors

双极性微波功率晶体管结温和电流的非均匀分布

Nonuniform distribution of junction temperature and current in bipolar microwave power transistors