双空位

DLTS测量表明，脉冲中子辐照（Φn＝8.6×1013n／cm2）在硅中引入的缺陷主要是双空位E4和E3缺陷，氧空位和双空位缺陷强度很低。

The results of DLTS measurement show that the primary defects are the divacancy E4 and E3 defects in Silicon radiated by pulse neutron and that the densities of the oxygen-vacancy and the divacancy E2 ( V2 - ) are very low .

纤锌矿半导体中双空位态的电子结构

Electronic Structures of the Divacancy in Wurtzite Semiconductors

研究了（MgO，H2O）固溶体中双空位的生成、数量及对烧结的影响。

The formation , amount and influence on sintering of the solid solution ( MgO , H_2O ) were studied .

与电子辐照对比，离子注入在E（0.41）附近引入了除双空位及磷空位以外的新的缺陷。

In comparison with electron irradiation , a new defect near the energy position E ( 0.41 ) of divacancies and phosphorous-vacancy is introduced by ion implantation .

Hg（1-x）CdxTe中杂质对及双空位深能级的研究

Study on the deep levels of impurity pairs and vacancy pair in Hg 1 - x CD x te

硅中Jahn-Teller畸变的双空位超精细相互作用的理论计算

Theoretical calculations for hyperfine interactions of the Jahn-Teller distorted divacancy in silicon

研究的三种双空位在（5，5）BN纳米管中的性质，发现只有次紧邻的BN双空位是磁化的。

Finally we also investigated three different vacancy pairs in ( 5,5 ) SWNT and found that only the next neighbor boron and nitrogen vacancy pair is magnetic . 4 .

实验发现经注量2.5×10~（16）/cm~2的碳离子辐照后，在BCC金属Nb中产生单空位和双空位二种缺陷。

The results show the existence of mono - and divacancies in BCC metal Nb following the 81 MeV carbon irradiation with a total dose of 2.5 × 10 ~ ( 16 ) cm ~ ( - 2 ) .

中子辐照产生了大量的阴离子单空位（F+）、阴离子双空位（F2）及其它更高阶的缺陷。

The results indicate that the irradiation generated a large number of optically detectable defects such as anion vacancies ( primarily the one-electron F ~ + center ), anion divacancies ( F_2 ) and some higher order defects .

而高住量辐照样品中观察到比双空位更复杂的缺陷形式，其完全被退火的温度比低剂量辐照的高250K。

Thecomplete annealing temperature of the defects for low fluence irradiated GaP was250K lower than that for high fluence irradiated GaP .

在90～300K温区范围内测试了中子辐照直拉硅单晶的正电子寿命谱及红外光谱，发现直拉硅单晶的中子辐照缺陷主要是双空位和氧-空位复合体。

Positron-lifetime and infrared absorption spectra measurement is made on neutron-irradiated CZ p-type silicon wafers in the temperature range 90K to 300K . It is found that the defects in silicon created by neutron irradiation are divacancies and vacancy oxygen complexes .

双空位形成能的分析结果表明，Ti-Ti最近邻双空位形成能最低，表明这种Ti-Ti最近邻双空位最稳定。

In terms of the calculation results of double vacancy energy of forming , we find there is the lowest double vacancy forming energy as the nearest neighbor atom of Ti being Ti .

寿命谱被成功地分成两个组分，长寿命组分在109&300K的温度范围有325±9ps的常数寿命值，它被认为是在负荷电双空位捕获的正电子寿命。

The lifetime spectra can be separated into two components . The long lifetime component , attributed to negatively charged divacancies , is found to be a constant value of 325 ± 9 ps in the temperature range of 109-300K .

双空位缺陷石墨纳米带的电子结构和输运性质研究

The electronic structure and transport properties of graphene nanoribbons with divacancies defects

扶手椅型石墨纳米带的双空位缺陷效应研究

The divacancy-defect effect of armchair graphene nanoribbons

立方半导体中双空位态的电子结构（Ⅱ）能级和简单的物理模型

Electronic structure of the divacancy in semiconductors ( ii ) energy levels and a simple physical model

选取了空位的三种可能的迁移方式，计算了单、双空位的迁移激活能。

Calculations of the migration energies of mono-vacancies and divacancies by three possible ways of migration are presented .

辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。

The induced defects by radiation are mainly duel vacancies , and the irradiated devices work stably and reliably .

实验结果表明随辐照剂量的增加双空位缺陷的浓度并不会无限地增加；

The results show that the intensity of V_2 is not infinitely increased with the increasing of the neutron dose .

计算表明：形成能最小时，表面原子第一层很容易形成单空位和结构a双空位。

Mono-and di-vacancy can form easily , based on calculation , in the first layer of surface atom associated with minimum formation energy .

本文在考虑空位浓度对空位迁移能的影响和双空位效应的情况下，给出了体心立方金属中空位流与空位浓度梯度之间的定量关系。

The vacancy-concentration effect on the vacancy-migration-energy and the behaviour of divacancies were considered Using a formula derived for the vacancy current in bcc metals .

随辐照剂量的增大，单空位、双空位和位错浓度增加，空位团的尺度和浓度都随之增大。

The concentrations of the mono-and di-vacancies and dislocations and both the concentration and size of the vacancy clusters or voids all increase with the increasing of the irradiation dose .

从黄铜脱锌的现象、特征及其影响因素出发，对黄铜脱锌的优先溶解机制、溶解-再沉积机制、双空位机制和渗流机制等进行了描述。

Optical microscope , SEM and EPMA are used to investigate the corrosion behavior of the Mg-Sb brass in the CuC12 solution and the effect and mechanism of Al , Sn on the process of dezincification .

还提出了活化稀土原子，在γ&Fe中提高平衡空位浓度，形成较多的双空位和原子空位团通道的扩散模型。

It also proposes that balanced blank density of γ - Fe is raised by activation rare earth atoms and diffusion model that the way of " double blank " and " atomblank ball " are formed .

结合能最大时，表面第一层结构a双空位最稳定，第一层与第二层两个最近邻空位的结构d次之，α-Fe金属表面层中存在空位向表面第一层迁移和聚集趋势。

A di-vacancy in the first layer is the most stable , corresponds to maximum binding energy , nearest-neighbor d between first and second layer is next . As that the migration and collection of vacancies in surface layer of α - Fe is clear .

综述了黄铜脱锌腐蚀的优先溶解和溶解-再沉积机制、双空位机制和渗流模型，介绍了抑制黄铜脱锌腐蚀的方法以及微量砷、硼元素对抑制黄铜脱锌腐蚀的作用。

The preferential solution of zinc and solution-redeposition mechanism , divacancy mechanism and percolation model of dezincification of brass were summarized . The methods of inhibiting dezincification are introduced . The effect of As , B and RE elements on the process of dezincification is also analyzed .

α+β双相黄铜脱锌的双空位机制初探

A primary study on divacancy mechanism of dezincification for α + β brass