电荷缺陷
- 网络Charge defect
电荷缺陷-
上述实验结果可从电荷缺陷及微观固溶结构两方面的联合作用机制进行解释。
Above result about the effect of various ions doping on luminescence properties could be explained by combination of charge compensation effect and substitution structure effect .
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退火工艺中较低温度下退火后正电荷减少，界面缺陷态没有变化，从而加快了光生少数载流子的复合。
After annealing in lower temperature , positive charge reduced and interface defect state does not changed , thereby speeding up the photo generated minority carrier recombination .