静电感应晶体管

静电感应晶体管（SIT）是一类新型功率器件。

Static induction transistor ( SIT ) is a new type of power device .

静电感应晶体管（SIT）电性能参数的研究

A Study on Electrical Parameters of SIT

描述了改善静电感应晶体管（SIT）大电流特性的新方法。

Methods for improving the high current performance of static induction transistor ( SIT ) are presented .

针对埋栅型静电感应晶体管（SIT）提出一种柱栅模型.用镜像法计算了器件内电势分布，并在此基础上计算了沟道势垒、栅效率、电压放大因子等。

A cylindrical gates model of the static induction transistor is proposed and mirror method is used to calculate the distribution of electric potential .

此外，对静电感应晶体管（SIT）的结构设计、版图设计和工艺流程设计也进行了深入的研究。

In addition , we designed the new device structure , the new layout and the new flow of the Static Induction Transistor ( SIT ) .

以对静电感应晶体管（SIT）的直流参数的研究为基础，详细研究了与SIT高频性能有关的参数的控制与调节。

In this article , based on the investigation of SITs DC parameters , the controlling and adjustment of the parameters related to SITs high frequency is discussed in detail .

本文简述了静电感应晶体管（SIT）大功率感应加热电源的研究成果。着重介绍了SIT的参数选择及控制方法。

This paper describes a high-frequency and high-power induction heating inverter by using Static induction Transistor ( SIT ) , and proposes the technique of choosing and controlling of SIT .

讨论了寄生栅源电容Cgs对静电感应晶体管高频功率特性的影响。

The effects of parasitic gate-source capacitance ( C gs ) on the power performance of SIT are discussed .

描述了宽温超高频pnp双极静电感应晶体管的结构、工作原理、设计与制造。

In this paper we describe the structure , operating principle , design and fabrication of the new high frequency BSIT device with large temperature range .

主要介绍静电感应晶体管、电荷调制器件、体电荷调制器件、基极存储图象传感器、增强MOS图象、CMOS等有源象素图象传感器的新进展。

In the paper the recent development of static induction transistor , charge modulation devices , buck charge modulated device , base stored image sensor , amplified MOS image and CMOS active pixel sensors are emphatically described .

本论文首先介绍了静电感应晶体管SIT作用机理，在此基础上系统分析了材料参数、工艺参数和结构参数与器件电性能的关系。

Based on the operational mechanism of SIT , the main electric parameters and construction are described and discussed in this thesis . The dependence of electrical characteristics on constructional parameters , material parameters , and technological parameters are analyzed in this article .

介绍一种电压型PWM静音式变频器，其主电路选用新型全控型器件&双极型静电感应晶体管（BSIT）和静电感应晶闸管（SITH）。

The paper describes a silent voltage source PWM frequency converter . Its main circuit uses novel full controlled devices bipolar static induction transistor ( BSIT ) and static induction thyristor ( SITH ) .

高线性大输出的静电感应晶体管上变频器

Static Induction Transistor Up Converter with High Linearity and Large Output

静电感应晶体管高频功率参数的控制

The Control on High Frequency Power Parameter of the Static Induction Transistor

平面栅静电感应晶体管阻断状态解析模型

Analytical Model of the Blocking State of Surface Gate Static Induction Transistor

表面栅静电感应晶体管沿沟道中心线电势分布的解析分析

Analytical Solution along the Central Line of the Channel in the Surface-Gate SIT

有机静电感应晶体管的制作及特性研究

The Manufacture and Research on the Operational Properties of Organic Static Induction Transistor

一种新型的a-Si：H静电感应晶体管

A New-Type a-Si : H Static Induction Transistor

双极型静电感应晶体管的温度特性

Temperature Property of Bipolar Static Induction Transistor

栅极长度变化对有机静电感应晶体管工作特性影响解析

Analysis of the Influence of Changing Gate Length on the Operation Characteristic of Organic Static Induction Transistor

讨论了静电感应晶体管性能控制的一般原则、方法和制造参数的控制判据以及控制因子β的作用。

The general control principles , methods , and criterions of fabrication parameters as well as the effect of control factor are analytically discussed .