载流子迁移率

f（max）&载流子迁移率关系在高频HBT设计中的意义

Significance of f_ ( max ) - Carrier Mobility Relationship in High-Frequency HBT Design

SOS膜载流子迁移率的纵向分布

In-depth distribution of carrier mobility in SOS films

适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型

A Carrier Mobility Model for Wide Temperature Range and Different Channel Doping in MOSFET Inversion Layer

IMO薄膜的高载流子迁移率主要是由于载流子受到的散射作用较弱所引起。

The high mobility is mainly due to the weak scattering in IMO.

透明导电IMO薄膜的载流子迁移率研究

Study on Carrier Mobility of Transparent Conductive IMO Films

分析认为IMO薄膜的载流子迁移率主要受晶界散射的控制。

The analysis reveals that the high carrier mobility is mainly limited by grain scattering .

具有高载流子迁移率的In2O3：Mo薄膜为进一步提高TCO薄膜的性能打开了一条新路；

High-mobility In2O3 : Mo film improves the properties of TCO films in another way .

氧化锌（ZnO）是一种宽带隙的多功能半导体材料，具有优良的物理和化学性质。石墨烯作为一种零带隙的半导体材料，具有极高的载流子迁移率和特殊的输运特性。

Zinc oxide is a kind of wide band-gap semiconductor which has excellent physical and chemical properties . As a gapless semiconductor , graphene exhibits ultrahigh carrier mobility and fascinating transport phenomenon .

在实用的透明导电氧化物（TCO）薄膜中，载流子迁移率主要是受电子与掺杂离子之间散射的限制。

The carrier mobility of practical transparent conductive oxide ( TCO ) thin film is mainly dominated by ionized impurity scattering .

对于较高温度下制备的TCO薄膜，对载流子迁移率起主要作用的散射机制是带电离子散射和电中性复合粒子散射。

In TCO films deposited on high temperature substrates , the ionized impurity scattering and the neutral complex scattering are dominant .

随着薄膜生长温度的升高，In含量减少，Ga含量相对增加，有效电子质量增大，合金散射效应加强，载流子迁移率下降。

With the growth temperature of Film increased , the content of In decreased , the content of Ga and the quality of effective electron increased , alloy scattering effect is strengthened , and carrier mobility decline .

初步研究表明，CdSe单晶体具有较高的电阻率，载流子迁移率-寿命积较大，对高能射线具有较高的阻止本领；

The preliminary researches show that CdSe single crystal has relatively high resistivity , large product of carrier mobility and life and high inhibition ability for high energy ray ;

对于MOS器件而言，沟道表面的特性对器件性能极为重要的影响，平整光滑的沟道表面是获得高载流子迁移率（高性能器件）的基本保证。

For MOSFETs , the features on the nanostructures of silicon surface are very important for the performance of devices . It is necessary to smooth the channel surface , in order to obtain high carrier mobility .

通过对半导体材料中载流子迁移率的特性分析，在原HPM探测器的基础上，提出了探测器中半导体传感器的新设计，使探测器的检测灵敏度提高一个量级；

A new type detector was presented in this paper , which was developed based on novel sensors and new measuring circuits to achieve good sensitivity and reliability for HPM power measurement .

首先介绍了宽温区（27～300°C）MOSFET的阈值电压、泄漏电流和漏源电流的特点以及载流子迁移率的高温模型；

In this paper , the characteristics of MOSFET threshold voltage 、 leakage current and drain source current in the wide temperature range from 27 ° C to 300 ° C are studied , afterwards the high temperature model of carrier mobility is studied too .

填充式Skutterudite化合物由于在中温领域（600～800K）具有很高的载流子迁移率μ和较大的Seebeck系数α而引起人们的广泛关注；

The filled Skutterudite compounds attract aboard attention owing to their high mobilities and relatively large Seebeck coefficients in the middle temperature range of 600-800K .

提出了一个晶粒间界的物理模型，以解释多晶硅薄膜晶体管（TFT）的低载流子迁移率和高阈值电压。

In this paper , a physical model of grain boundaries is presented to explain the low value of carrier mobility and the high value of threshold voltage for poly-silicon thin film transistors ( TFT ) .

结果表明，IMO薄膜的载流子迁移率高达100cm2V-1s-1以上，远超过已报导的其他掺杂透明导电氧化物（TCO）薄膜的载流子迁移率；

The results show that the mobility of IMO is over 100 cm 2V - 1 s - 1 , which is much higher than those of other transparent conductive oxide ( TCO ) films .

根据分析，高温MOSFET阈值电压和载流子迁移率的降低，以及MOSFET漏端pn结泄漏电流的增加引起了CMOS倒相器和门电路直流传输特性劣化。

It may be concluded that DC transfer characteristics of high temperature CMOS inverter and gate circuits deteriorate due to reductions in carrier mobility and threshold voltages of MOSFETs and increase of leakage current of MOSFET 's drain terminal pn junc-tion at high temperature .

聚合物半导体光催化材料的瓶颈问题是宽带隙造成对可见光吸收性能不佳，光生载流子迁移率低导致光催化活性不高，以及HOMO能级较高引起材料易被氧化，稳定性较差。

The existing bottlenecks of polymer semiconductor photocatalysts are small visible-light absorption due to wide bandgap , limited photocatalytic activity due to low mobility of photogenerated charge carriers , poor oxidative stability due to high HOMO energy level .

共轭聚合物的光谱吸收、载流子迁移率以及HOMO、LUMO能级是影响聚合物太阳能电池效率的关键因素。

The absorption spectra , charge carrier mobility , HOMO and LUMO energy levels of conjugated polymers are the major factors for the power conversion efficiency ( PCE ) of polymer solar cells ( PSCs ) .

在电学方面，我们小组已经就其基本电学参数，如载流子迁移率；其新颖的低维特性，如量子隧穿；其直流特性，如I-V和C-V测量等方向展开了广泛研究。

Our group has addressed many issues about the electrical properties of nc-Si : H , including measuring the elemental electrical parameters , such as carrier mobility ; researching the novel low-dimension phenomenon , such as resonant tunneling ; getting the DC characteristics , such as I-V and C-V curves .

并推导其载流子迁移率各向异性方程，此方程可以用来有效预测有机半导体材料载流子迁移率极值及其方向，同时可实现基于BTBT设计高性能有机半导体材料。

The anisotropic function of charge transfer mobility is also derived , which could be used to predict the extreme value and its direction of the mobility and design novel organic semiconductor material with high performance based on BTBT .

载流子迁移率对单层有机发光二极管复合效率的影响

Effects of carrier mobilities on recombination efficiency in single layer organic diodes

应变硅载流子迁移率增强机理及模型研究

The Study on Enhancement Mechanism and Model of Strained Si Carrier Mobility

有机半导体中载流子迁移率的测量方法

Measurement Methods for Charge Carrier Mobility in Organic Semiconductors

第一性原理预测有机材料的载流子迁移率

Predicting mobility of organic materials from first-principles

载流子迁移率测量的光电方法

Photoelectric Method of Carrier Mobility Measuring

因其超高的载流子迁移率和光透过率等优点，在微电子和光电器件中有着广阔的应用前景。

Because of its ultrahigh mobility and high transmittance , graphene shows promising application for microelectronics and photoelectric devices .

在考虑了各种散射效应对迁移率的影响后，提出了短沟道MOST表面载流子迁移率的温度模型。

We represent a temperature model of surface carrier mobility of short channel MOST after thinking about kinds of dispersion effect .