载流子浓度
- 网络carrier concentration;carrier density
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GaP:N绿色LEDN2层载流子浓度的优化
Optimization of the Carrier Concentration in the n_2 Layer of GaP : N LED
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重掺杂P型Si(1-x)Gex层中少数载流子浓度的低温特性
Low Temperature Characteristics of Minority Carrier Concentration in Heavily Doped p SiGe Layers
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霍尔测试表明:随着Al组分的提高,薄膜的迁移率和载流子浓度都有所提高。
Hall Effect measurements show the carrier mobilities increase as Al content increasing .
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Matlab在计算半导体费米能级和载流子浓度中的应用
A Method for Calculating Fermi Energy and Carrier Concentrations in Semiconductors with Matlab
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ZnSe:Cl,N单晶薄膜中载流子浓度的电学法测量和光学法确认
Examination and Confirmation of the Carrier Concentration in ZnSe : Cl , N Crystal Films by Electrical and Optical Methods
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最后,对混合掺杂n型和p型半导体的载流子浓度随温度的变化规律进行了简单的讨论。
In the end , we discuss simply about the varied patterns of concentration and temperature of free carriers in co-doped semiconductors .
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GaP∶NLPE片的纵向载流子浓度分布
Carrier Concentration Profiles of GaP ∶ N LPE Wafers
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丝状发光的GaAs注入式半导体激光器中结电流密度与载流子浓度的分布
Profiles of junction current and carrier-concen-tration in GaAs injection lasers with filament
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其本身的氧化还原过程和非化学计量是其氧敏性的根源,在氧过剩的La2NiO4+ā系统中载流子浓度与氧分压的1/6次方成正比。
Its oxygen-sensitivity is related to its oxidation and reduction process and non-stoichiometric ratio .
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As掺杂P型材料的少子寿命与同载流子浓度Hg空位为主的P型材料少子寿命相比,大了一个数量级。
For the same concentration , the minority carrier lifetime of P-type As-doped HgCdTe is one magnitude larger than the Hg-vacancy .
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GaN压电效应对载流子浓度的影响
Influence of Piezoeffect on Carrier Concentration in Gallium Nitride Epilayer
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GaN载流子浓度和迁移率的光谱研究
Optical spectroscopy study on carrier concentration and mobility in GaN
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应变Si(1-x)Gex层本征载流子浓度和有效态密度的温度特性分析
Temperatures characteristics of intrinsic carrier concentration , effective densities of states in strained si_ ( 1-x ) ge_x layers
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观察了硼和磷离子注入Si中的载流子浓度剖面分布和异常增强扩散。
The carrier concentration profiles and the anomalous enhanced diffusion in Si implanted with boron and phosphorus ions are observed .
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通过霍尔测试,获得了SiC材料的导电类型、电阻率、载流子浓度和迁移率。
Electric conduction type , resistivity , carrier concentration and mobility were obtained from the Hall effect measurement .
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偏压对溅射ITO膜载流子浓度和迁移率的影响
Effect of Bias Voltage on Carrier Concentration and Hall Mobility in ITO Films
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非抛物型能带半导体Hg(1-x)CdxTe的本征载流子浓度
Intrinsic carrier concentration in hg_ ( 1-x ) cd_xte semiconductors with nonparabolic band
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钙钍掺杂YBCO超导体中的载流子浓度
Carrier Density in YBCO Superconductors Doped by Ca and Th
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本文从晶体生长机理、n型半导体能带理论、迁移率和载流子浓度等因素来解释上述结构。
These phenomena have been discussed based on the mechanism of crystal growth , theory of n-type semiconductor 's energy band , carrier concentration and mobility in this paper .
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这主要是因为Li掺入后会较大地改变ZnO的载流子浓度,而ZnO基DMS的铁磁性可能来源于载流子媒介的交换作用。
ZnO-based DMS ferromagnetism may originate from the carrier mediated exchange interaction and the carrier concentration of ZnO might change when Li doped .
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采用C-V法测量Si/GaP(Ⅲ)异质结的表观载流子浓度分布n(x),从中导出了异质界面的导带失配值和界面电荷密度。
The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe .
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电化学C-V法测量半导体材料载流子浓度分布
Electrochemical C-V Method for Determination of Semiconductor Impurity Profile
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透明导电IMO薄膜的载流子浓度测量
Measurement of Carrier Concentration of Transparent Conductive IMO Films
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然而,p型GaN的载流子浓度偏低,电阻偏大一直是GaN材料在制备大功率LED和LD方面应用的瓶颈之一。
However , the low carrier concentration and large resistance of p type GaN are the bottleneck of GaN in fabricating high power LED and LD .
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本文对用C-V法提取SiC隐埋沟道MOSFET沟道载流子浓度的方法进行了理论和实验分析。
A theoretical and experimental study on extracting channel carrier concentration for 4H-SiC buried channel MOSFET has been carried out .
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讨论了不同Er离子注入量对硅基底上沉积的CdTe薄膜结构和光电性能的影响,并具体给出了掺杂CdTe多晶薄膜的电导、载流子浓度及迁移率等参数值。
Here the conductance , carrier concentration and hall mobility ect parameters of Er doped CdTe films have been given .
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由于InN纳米线中高的自由载流子浓度,而导致材料表现出金属导电行为。
Due to the high carrier concentration , a single InN nanowire exhibits electrical transport property characteristic of metals .
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对得到的仿真结果,论文结合已有的PIN限幅器理论模型,通过分析限幅器核心器件&PIN管I区载流子浓度的变化,进行了理论分析。
The result is clarified through analysis on the variation of the PIN diode 's carrier density in I-region , combined with the existed theoretical model .
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MBE生长的InSb和InAsxSb(1-x)的载流子浓度剖面分布
Carrier Concentration Profiles of InSb and InAs_xSb_ ( 1-x ) Grown by MBE
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AlGaN/GaN/铁电双异质结构可在GaN内形成双沟道,载流子浓度提高2倍以上。
There are dual channels in GaN layer of AlGaN / GaN / FE heterostructure so that carrier density improves more than twice .