半导体发光二极管

光纤白光干涉仪是使用波长为1310nm的半导体发光二极管的相位调制型光纤传感器，可用于压力、温度和应变的测量。

White-light fiber interferometer is a kind of phase modulated fiber-optic sensor , which uses 1 310 nm semiconductor LED .

半导体发光二极管（LightEmittingdiode，LED）是二十一世纪最具发展前途的一种新型绿色固体光源。

Light emitting diode ( LED ) is one of the most promising green solid light sources in the twenty-first century .

基于GaN的半导体发光二极管（LED）和半导体激光器（LD）已被广泛应用。

GaN based LED and laser diode have been broadly used .

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管（Ⅰ）

MOCVD Growth of GaN-based light emitting diodes and laser diodes (ⅰ)

在各种新光源中，最受瞩目的就是半导体发光二极管（LED）。

Among all sorts of new light sources , Light Emitting Diode ( LED ) is most potential for energy saving .

以半导体发光二极管（LED）为主要代表的新一代光源技术，被公认为是当今最具发展潜力的节能环保技术。

The new generation of light-source technology represented mainly by LED is recognized generally as one of the most energy-saving and environmental protection technology .

针对半导体发光二极管（LED）出光效率低下的问题，提出了一个在LED顶部引入周期性微结构的新设想。

To solve the problem of low extractive efficiency in semiconductor light emitting diodes ( LED ), a proposal of introducing microstructures onto the top of LED was presented .

基于几何光学与辐照度理论，对满足均匀近场照明的半导体发光二极管（LED）二次曲线阵列进行分析，推导了光源照射到屏上的总照度表达式。

Based on geometrical optics and irradiation theory , a conic light-emitting diode array with uniform far-field irradiance was analyzed . Formulas for calculating total irradiance from source to collecting screen were deduced .

自半导体发光二极管诞生，LED照明技术逐步的发展，功能多样，利用率逐步提高，节能减排无污染、可以多色变光，使用方便简单，开创了照明技术的新篇章，标志着新技术的诞生。

LED lighting engineering has been developed since semiconductor LED born . It start a new chapter because of features diversity , high utilization , energy saving and emission reduction and polychromatic light . Also it is easy to use .

半导体发光二极管的研究与分析

Research on and Analysis of Semiconductor Luminescence Diode

半导体发光二极管的电学和光学特性一直以来倍受广大研究学者关注。

Electrical and optical properties of semiconductor light emitting diodes ( LEDs ) have been paid much attention by most researchers .

在我们测试的频率范围内，半导体发光二极管中普遍存在着负电容现象，并且测试频率越低、正向电压越大，负电容现象就越显著；

In the frequency region that we tested , the phenomenon of negative capacitance of LEDs exist in most semiconductor LEDs ;

GaAs、GaN是制作光电仪器、半导体激光器以及发光二极管很常用的半导体材料。

As semiconductors , GaAs and GaN are the most suitable candidates for fabrication of photovoltaic devices , semiconductor lasers and light emitting diodes .

依据k·p方法等半导体理论对发光二极管的光电特性进行仿真模拟是一种快捷可靠的方法，有助于从能带、载流子分布等微观物理现象上对器件进行理论研究分析。

Numerical simulation based on semiconductor theory , such as k-p method , is a fast and reliable way to study the characteristics of GaN-based LEDs , which is helpful to the study of band gap and carrier distribution , especially .

采用共聚焦光学结构、半导体激光和发光二极管固体光源为激发光源，研制了一种便携式荧光检测系统。

A portable fluorescence detection system based on confocal configuration and using semiconductor lasers and light-emitting diode as excitation sources is described .

以半导体激光器或发光二极管作为光源的气体传感技术在灵敏度、选择性、动态范围、信噪比和响应时间等方面比传统方法具有诸多优点。

Gas-sensing technology , which employs laser diode ( LD ) and light emitted diode ( LED ) as light resource , has multitude advantages over traditional approaches , such as high sensitivity , multiple selection , wide dynamic range , good signal to noise ratio and quick response time .

GaN基半导体在短波长发光二极管、激光器和紫外探测器以及高温微电子器件等方面显示出广阔的应用前景，已成为人们研究的热点。

GaN has very promising potential for short-wave length light-emitting diodes , semiconductor lasers , and optical detectors .

超辐射发光二极管（SLD）具有不同于半导体激光器和普通发光二极管的优异性能。

Superluminescent light emitting diode is a semiconductor light source whose high performance is between those of laser diode and light emitting diode .

随着半导体工业及技术的发展，半导体发光二极管已越来越广泛地应用于显示、指示、照明和光通讯等领域，对其特性的研究也越来越显得重要。

With the development of industry and technology of semiconductor , light-emitting diodes ( LEDs ) have been widely used in display , light , light-storage , optical communication , etc. It becomes more and more important to study LEDs'properties carefully .