非平衡载流子寿命

用微波方法测量半导体非平衡载流子寿命

Application of Microwave Method to Measurement of Nonequilibrium Carrier Lifetime

本文提出一种测量半导体中非平衡载流子寿命的新方法。

A new method of measuring excess carriers lifetime in semiconductors is described .

高频1.09μm红外光电导衰减法测试硅单晶非平衡载流子寿命

Measurement of Minority Carrier Lifetime in Silicon by the Method of 1 . 09 μ m Infrared High Frequency Photoconductive Decay

介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。

The measurement results of complex dielectric constants of low loss and thin flake materials , conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced .

由此导出了非平衡载流子寿命，复合几率的统计表达式，以及包括产生-复合过程的电荷连续性方程和稳态输运过程的电流方程。

Therefore the equation is extented to the case where non-equilibrium carriers exist , from which we here derived the statistical expressions of life-time and the recombination probability , the charge continuity equation including carrier generation-recombination as well as the current equation of steady transport process .