单晶材料

用提拉法磁悬浮冷坩埚技术生长的RFe2（Tb0.3Dy0.7Fe1.95）单晶材料，其室温下的饱和磁致伸缩系数λs可达2×10-3以上，优于同成分的定向结晶材料。

Magnetostrictive coefficient of Tb 0.3 Dy 0.7 Fe 1.95 ( RFe 2 ) single crystal is much higher than that of directional solidification crystal with the same composition .

P型高阻硅单晶材料的寿命初探

Study on the lifetime improvement of p-type high-resistance silicon single crystal materials

本文的目的在于研究n型和p型硅单晶材料在外荷载作用下的变形性质。

This paper studies the properties of the mechanical deformation of N-type and P-type monocrystal silicon under external load .

HILL屈服准则与晶体塑性模型对FCC单晶材料塑性各向异性描述能力的比较

Comparative study of Hill model with crystal plasticity for FCC single crystals

半绝缘SiC单晶材料的电学参数测试研究

Electrical Characterization Measurement of Semi-insulating SiC Single Crystal

研究了原生和高温退火处理后非掺n型和半绝缘InP单晶材料中产生的缺陷。

Deep level defects in as-grown and annealed n-type and semi-insulating InP have been studied .

本文报道了在不同热处理条件下P型含氮CZ-Si单晶材料的退火性质。

The annealing properties of p-type CZ-Si crystal containing nitrogen under various heattreatments are reported .

InP单晶材料现状与展望

Development and Status of InP Single Crystal

在p~+GaAs体单晶材料上进行的NEA活化实验

Experiments of activation to nea with a bulk p + GaAs

此外，对SiC单晶材料的生长机理进行了讨论，研究了过饱和度对SiC晶体生长和形貌的影响。

Furthermore , the growth mechanism of the SiC single crystals is discussed and the effect of supersaturation on the crystal growth and morphology is also investigated .

简要阐述了垂直布里奇曼（VB）法生长GaAs单晶材料的动力学原理及VB-GaAs单晶的生长技术。

Crystal growth dynamics theory and technique of vertical bridgman method for GaAs single crystal growing were introduced .

采用SiCl4、CCl4和金属K体系，以溶剂热合成法在高压釜中制备了碳化硅（SiC）单晶材料。

SiC single crystals have been prepared by the method of solvothermal synthesis with a system of SiCl 4 , CCl 4 and metal K in an autoclave .

大尺寸6H-SiC半导体单晶材料的生长

Growth of Large 6H - SiC Single Crystals

综合深能级缺陷和电学性质的测试结果，证明了半绝缘InP单晶材料的电学性能、热稳定性、均匀性等与材料中一些深能级缺陷的含量密切相关。

The electrics performance , thermal stability , homogeneity and so on are closely related to the deep level defects in the materials .

指出采用低浓度高补偿N型InSb单晶材料是改善远红外探测器性能的有效途径。

This paper points out that it is one of the effective methods to improve the FIR detector performances by using N-InSb crystal materials with low electron concentration and high compensation degree .

热压法、PVD、CVD制备的多晶材料日趋完善，在一些领域已取代单晶材料。

The performance of polycrystalline material manufactured by using Hot-pressed forming method , PVD and CVD is becoming perfect and has replaced monocrystalline material in some fields .

NEA活化实验是利用体单晶材料进行的，未经任何外延或真空解理手续。

The activation experiments have been conducted with bulk p + GaAs single crystal samples without any additional epitaxy or cleavage in vacuum .

近年来，武汉理工大学发明了利用磁悬浮冷坩埚提拉稀土&铁超磁致伸缩单晶材料的技术，攻克了长期困扰材料制备的污染和孪晶两大难题，制备出具有优异性能的Tb-Dy-Fe单晶。

Recently bulk Tb-Dy-Fe single crystals have been obtained by magnetic levitation cold crucible without contamination in Wuhan University of Technology .

由于SiC单晶材料的硬度及脆性大，且化学稳定性好，故如何获得超平滑无损伤晶片表面已成为其广泛应用所必须解决的重要问题。

Owing to high hardness and brittleness of SiC single crystal which has a good chemical stability , it is the critical issue that must be solved in its extensive application to obtain a wafer surface which is super smooth and free of scratch .

文章简要地概述了GaSb材料的物理和电学特性，较详细地介绍了GaSb单晶材料的制备技术和薄膜生长技术。

The physical and electrical properties of GaSb , are reviewed , followed by introduction of growth technology for GaSb crystals and preparation technology for the thin films .

研究发现，透明多晶钇铝石榴石（YAG）陶瓷与其单晶材料相比，可实现大尺寸、高掺杂浓度、低成本，在高功率全固态激光器中有着巨大的应用价值。

It was showed through the research that transparent polycrystalline YAG ceramics are low cost , and can be highly doped with Nd ~ ( 3 + ) and possible for lager size laser polycrystal . It is a promising ceramic for high power laser host materials .

其次根据剪切变形比能最大及单晶材料不同晶面晶向剪切弹性模量不同的原则，结合超精密切削模型，建立KDP晶体超精密切削各向异性的剪切角理论计算模型；

A theoretic model of shear angle of KDP ultra-precision machining is built with the principle of the maximum specific energy of shear deformation and the mechanism of change of the shear modulus with different crystal planes and orientations .

将菊池图的图像质量（IQ）和Hough转变强度，以及小角度晶界错配的统计数据作为应力敏感参数，研究了单晶材料系统中，微米~亚微米尺度的晶格畸变状态及局域弹性应变场。

The strain sensitive parameters as Image qualities ( IQ ), the Hough transforms of the Kikuchi lines , as well as the small angle misorientation were used to evaluate the lattice distortion and the local elastic strain fields of the single crystals system at micron to submicron regions .

立方晶体单晶材料屈服面的研究

Study on the yield surface of cubic crystalloid single crystal material

金属单晶材料精密切削时切削力的研究

Study on Cutting Force of Cutting Metal Single Crystal in Precision Machining

合金化Mo-3Nb单晶材料的室温力学性能

Mechanical Properties of Alloying Mo - 3 Nb Single Crystal Materials in the Room Temperature

硅单晶材料发展动态

Development and Tendency of Silicon Crystal Material

利用以上测量方案我们对并五苯单晶材料的电阻率和接触电阻进行了测量。

We measured the resistance and the contact resistance of the pentacene by using such method .

对于碳化硅单晶材料制备技术而言主要是由晶体生长技术和晶片的加工技术共同构成，二者缺一不可。

The manufacture technique of silicon carbide single crystal consists of single crystal growth and wafering .

深亚微米集成电路用硅单晶材料

Silicon Used for Sub-micro LSI