磷化镓

通过数值拟合获得了磷化镓（GaP）在飞秒激光脉冲作用下的非线性折射率和双光子吸收系数。

Nonlinear refractivity and two-photon absorption of GaP are obtained by numerical fitting the experimental results .

LEC<111>磷化镓晶片缺陷的观察

Observation of Defect on LEC < 111 > GaP Wafer

新型红外晶体材料磷化镓（GaP）的生长结构缺陷及其性能

Structural Defects of IR Optical Material Growth of Gallium Phosphide and Properties

纳米磷化镓粉体还原氮过程的Raman光谱分析

Analysis of Raman Scattering of Gallium Phosphide Nanoparticles Undergoing Nitrogen Reduction

利用表面增强拉曼光谱，初步确定了吸附于纳米磷化镓（GaP）粉体表面的碱性品红分子的取向。

By means of surface enhanced Raman spectroscopy ( SERS ), the main molecular configurations of fuchsin basic adsorbed on the surface of gallium phosphide ( GaP ) nanoparticles were determined preliminarily .

采用磁控溅射方法成功地在ZnS衬底上制备了磷化镓（GaP）薄膜，并系统地研究了射频功率、气体流量、工作气压、衬底温度等主要工艺参数对GaP膜沉积速率的影响规律。

GaP films have been prepared on ZnS substrates by radio frequency ( RF ) magnetron sputtering , the effect of the major deposition parameters , such as RF power , gas pressure , gas-flow rate and substrate temperature , on the deposition rate of GaP films were discussed .

液相外延制备磷化镓红色发光材料

Preparation of gallium phosphide red luminescence material using liquid phase epitaxial

基于磷化镓衬底的氧化镓纳米线膜制备与性能研究

Fabrication of Gallium Oxide Nanowire Films on Gallium Phosphide Substrates and Investigation of Their Properties

布居分析表明，磷化镓团簇的成键属于混合键型。

Mulliken population analyses indicate that the bonding in GaP clusters is of a mixed type .

磷化镓绿色发光二极管

GaP Green Light Emitting Diodes

磷化镓材料市场前景

Marketing Prospects on GaP Material

在砷化镓衬底上异质外延磷化镓的表面缺陷与绿色发光管（摘要）

Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent ( EL ) Diodes ( Abstract )