单晶硅片

羊抗人IgG的Fab'片段在单晶硅片表面的位点导向性固定

Site Specific Immobilization of Fab ' Fragments of Goat Antihuman IgG on Silicon Wafer Surface

随着IC的快速发展，对单晶硅片的表面质量和加工精度的要求越来越高。

With the rapid development of the IC , the increasingly high demand for monocrystalline silicon wafer surface quality and grinding accuracy .

测量单晶硅片晶面弯曲的X射线方法

Measurement method of crystal plane bow in single crystal silicon by X-ray

热处理单晶硅片中Fe玷污的深能级瞬态谱分析

DLTS Analysis on Iron Contamination of Heat-treated Silicon Wafers

本文采用P型单晶硅片，在三极电解槽中，进行了电化学深刻蚀的探索性实验。

P-type Silicon crystal plates have been adopted in the paper . Then the electrochemical etching experiments are done in three electrodes electrobath .

单晶硅片纳米磨粒磨损的AFM模拟

AFM Simulation for a Nano-abrasive Micro-wear on the Silicon

IgG分子在单晶硅片表面导向性固定的XPS和EIA研究

XPS and EIA Studies of Site-directed Immobilization of IgG Molecules onto Single Crystal Silicon Wafer Surfaces

利用离子注入以100和180keV的能量和5×1015cm-2的剂量向单晶硅片双面注入氮杂质，然后进行不同温度的快速热处理（RTP）。

Nitrogen ions are implanted into silicon wafer on both sides , followed by rapid thermal processing ( RTP ) at different temperatures .

单晶硅片是集成电路（IC）制造过程中最常用的衬底材料，硅片的表面层质量直接影响着器件的性能、成品率以及寿命。

Monocrystalline silicon wafers are the most widely used substrates in IC manufacturing fields . The surface layer quality directly affects the property , the rate of finished products and the lifetime of IC device .

利用新型Sol-Gel法在镀有Au底电极的单晶硅片上制备Bi2O3、Sb2O3掺杂的ZnO陶瓷薄膜。

Zinc oxide ceramic thin films doped with bismuth oxide and antimony oxide were deposited on Au / Si substrates by a novel Sol Gel process .

以单晶硅片为靶材，高纯Ar和O2分别为溅射气体和反应气体，采用反应磁控溅射法在铝基体上制备了硅氧化物薄膜。

Single crystal silicon slice as target , Ar and O_2 respectively as sputtering and reacting gas , a silicon oxides ( SiO_x ) film was deposited on Al substrate by reactive magnetron sputtering .

用真空蒸发法在玻璃和单晶硅片上制备纯Zn和掺杂Zn薄膜，然后在高于450℃条件下进行氧化、热处理（玻璃衬底）获得良好的纳米ZnO薄膜和掺杂ZnO薄膜。

Zn thin films and impurity dopped films were prepared by vacuum evaporation on glass and silicon substrates to obtain the nanon ZnO films on the oxidize and heat treatment over 450 ? ℃ in O 2 ( glass substrates ) .

利用射频反应磁控溅射在显微玻璃、单晶硅片、NaCl片和石英上沉积ZrO2薄膜。

Zirconium dioxide films were grown by RF reactive magnetron sputtering at different substrate temperatures on various substrates , including glass , silicon , fussed quartz , and NaCl , respectively .

本文中使用厚度不同的两种单晶硅片分别模拟IGBT和二极管，工艺顺序是先将硅片切割成目标尺寸再使用磁控溅射进行镀膜。

This research has adopted two wafers on different thick levels to simulate IGBT and diode . The industry process is to incise silicon chip as the targeted size and to deposition by magnetron sputtering .

以单晶硅片（100）为衬底，尿素-甲醇有机溶液为沉积液，用电化学沉积的方法在阴极制备出CNx薄膜。

Carbon nitride ( CNx ) films have been prepared on Si ( 100 ) substrates by cathode electrodeposition , using methanol and methanol-urea solution as electrolyte .

采用交流磁控溅射法分别在载玻片、抛光单晶硅片（ITO玻璃）和铝片上制备出纳米TiO2薄膜，研究了薄膜厚度、退火温度及衬底对薄膜光催化降解苯酚性能的影响。

Nano-TiO_2 thin films were prepared by AC magnetron sputtering on substrates such as glass , ITO glass and aluminum ( Al ) foil at room temperature . The photocatalytic characteristics of thin films with its annealing temperature , thickness and substrates for degrading phenol were studied .

不采用异丙醇或其他机械消泡的条件下，用质量分数为5%的Na2SiO3溶液在80℃腐蚀120min，单晶硅片表面可获得最佳反射率为12.56%的减反射绒面。

A wafer with a suede structure and a mean reflectivity of about 12.56 % was obtained after corrosion with 5 % ( in mass ) Na_ 2 SiO_ 3 solution at 80 ℃ for 120 min without mechanical de-bubbling .

本论文在此基础上对沉积设备做了进一步的完善，采用自行设计研制的电子回旋共振（ECR）等离子体增强化学气相沉积（ECR-PECVD）技术，在玻璃和单晶硅片衬底上直接沉积Poly-Si薄膜。

Based on this technic , we improved the deposition system , use the electron cyclotron resonance ( ECR ) microwave plasma enhanced chemical vapour deposition ( ECR-PECVD ) to deposition poly-Si films directly on the glass substrate and silicon wafer at low temperature .

在重掺杂非活性单晶硅片上生长一定厚度的SiO2，开窗口后作为衬底，利用快速热化学气相沉积（RTCVD）及区熔再结晶（ZMR）方法制备多晶硅薄膜太阳电池。

After growing SiO 2 layer with a certain thickness on heavy diffusion inactive C Si wafer , opening windows , then fabricating polycrystalline silicon thin film solar cells on it with Rapid Thermal Chemical Vapor Deposition ( RTCVD ) and Zone Melt Recrystallization ( ZMR ) method .

这个研究为单晶硅片的集成平坦化抛光提供了一种新的方式。

This study provides a new way for chemical mechanical planarization .

单晶硅片超精密加工表面亚表面损伤检测技术

Measurement of Silicon Wafer Surface / subsurface Damage Induced by ULtra-precision Processing

单晶硅片超精密磨削减薄技术试验研究

Experimental Research on Ultra-precision Grinding Technology for Silicon Wafer Thinning

单晶硅片温度的拉曼光谱测定

The measurement temperature of monocrystalline silicon with Raman spectrum

单晶硅片超精密磨削加工表面层损伤的研究

Study on the Surface Layer Damage of Monocrystalline Silicon Wafer Induced by Ultra-precision Grinding

基于磨损行为的单晶硅片化学机械抛光材料的去除特性

Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior

光电化学法测定硅中少子扩散长度双面抛光单晶硅片少子扩散长度的测量

Determination of Minority Carrier Diffusion Length in Both Sides Polished Silicon Wafers by SPV Method

单晶硅片的制造技术

Manufacturing Technique of Monocrystal Silicon Wafers

另一方面，由于单晶硅片直径的变大，集成电路工艺对硅片的机械强度提出了更高的要求。

On the other hand , the larger diameter CZ silicon wafers imposes on increasingly requirements on the mechanical properties .

利用半导体平面工艺在单晶硅片的不同方向上制作出四个电阻，并连接成一个惠斯通电桥。

Four silicon chip resistors are produced in different directions using semiconductor Planar process , and connected into a Wheatstone e-bridge .

本实验通过系统地改变沉积参数，在经过清洗好的单晶硅片上沉积了一系列的氮化硅薄膜。

In experiment , a series of silicon nitride thin films are prepared on cleaned silicon wafer by varying deposition parameters .