立方氮化硼

立方氮化硼表面的金属膜

Metal Film on cBN Surface

尽管这些方法还远未达到完善的程度，但是它们为立方氮化硼等超硬材料的制备提供了一种温和、经济且更为可控的途径。

Although these methods are still far from being perfect , at least they provided us the possibility of synthesizing cBN in a moderate and controllable way .

WINTER钻石磨轮和立方氮化硼磨轮的选型

Selection for diamond abrasive wheel and cubic boron nitride wheel of winter

B2O3对合成立方氮化硼的影响

Influences of B_2O_3 on the Synthesis of cBN

本文主要研究立方氮化硼的制备、性质和n型掺杂等内容。

In this paper we mainly study preparation , properties and n-type doping of cubic boron nitride thin films .

同时由合成后样品中立方氮化硼的生成区域对V型生长区温度梯度分布进行了分析讨论。

From the observation of cBN crystals growth within the sample capsule , the temperature gradient distribution has been discussed .

用DFT计算立方氮化硼的状态方程及体积模量

DFT calculations of equation of state and bulk modulus of cubic boron nitride

热灯丝辅助射频等离子体CVD法生长立方氮化硼膜的研究

Study on cubic boron nitride films deposited by thermal filament assisted RF plasma CVD

立方氮化硼（CBN）工具材料及其生产、应用现状与发展趋势

Cubic boron tool material and its production , application and development

ArF准分子激光立方氮化硼薄膜的制备

Cubic Boron Nitride Thin Films Prepared by Pulsed ArF Excimer Laser Deposition

Mg-BN系中B2O3对立方氮化硼生长的影响

Effect of Boron Oxide on the Growth of Cubic Boron Nitride in Mg-BN System

Mo涂层的立方氮化硼（cBN）与玻化陶瓷复合烧结体的研究立方氮化硼的合成

Study on Composite Materials Sintered by Mo Clad cBN and Vitrified Ceramics Synthesis of Cubic Boron Nitride

通过磁控溅射及其后处理等方法在立方氮化硼（简写cBN）表面形成均匀的Ti镀层。

Well distributed Ti coatings were formed on the surface of cBN grits by means of magnetron sputtering method .

用触媒Mg-Mg3N2合成立方氮化硼

The Synthesis of CBN by Using Mg-Mg_3N_2 as Catalyst

用射频溅射法将立方氮化硼（C-BN）薄膜沉积在p型Si（100）衬底上，薄膜的成分由傅里叶变换红外吸收谱和X射线衍射谱标识。

The cubic boron nitride ( c-BN ) thin films were deposited on p-type Si ( 100 ) substrates by means of radio frequency sputtering .

立方氮化硼复合体的低压合成CO2加氢低压合成甲醇CuO-ZnO催化剂性能的研究

Study on the catalytic properties of methanol synthesis from carbon dioxide and hydrogen under lower pressure

Y-ZrO2增韧SiC/Si3N4结合聚晶金刚石/立方氮化硼的研究

Investigation on SiC / Si_3N_4 Bond Polycrystalline Diamond / cubic Boron Nitride Toughened with Y-ZrO_2

MW-ECRCVD制备立方氮化硼薄膜

The preparation of cubic boron nitride films by MW-ECR CVD

立方氮化硼（cBN）是一种具有广泛应用价值的Ⅲ-Ⅴ族二元化合物，其优异性质可与金刚石相比拟或胜之。

Cubic boron nitride ( cBN ) is an important compound of the ⅲ - V group .

将立方氮化硼（CBN）磨料依次浸泡于敏化液和活化液中，进行表面活化处理。

CBN ( cubic boron nitride ) grits surface were processed with sensitizing solution and activating solutions .

本文采用声光调QYAG脉冲激光径向辐射，对密实型树脂结合剂立方氮化硼超硬磨料砂轮进行微加工烧蚀修整试验研究。

Experimental study of trimming employs an acoustic-optical Q-swithched YAG pulse laser to radiate in orthogonal direction and micro-machining burn the densely resin bonded CBN super-abrasive wheels .

介绍了超硬磨料立方氮化硼（CBN）砂轮磨削性能的优越性。

Superiority of grinding property of the extra-hard abrasive cubic borium nitride ( CBN ) grinding wheel is presented .

陶瓷结合立方氮化硼（CBN）磨削工具是一类用于磨削加工的新型陶瓷/玻璃复合材料。

Vitrified bond cubic boron nitride ( CBN ) grinding tools are new ceramic / glass composites for grinding .

本文还研究了金刚石表面纳米结构的构建及立方氮化硼（cubicboronnitride，cBN）表面的修饰和功能化，并开展了其应用研究。

In addition , the construction of nano-structures on diamond films , the modification of cubic boron nitride ( cBN ) and their applications were investigated .

聚晶立方氮化硼是由无数细小、无序排列的立方氮化硼（cBN）烧结而成。

Polycrystalline cubic boron nitride ( PCBN ) is sintered from innumerable fine and disordered cubic boron nitride ( cBN ) .

1用射频溅射法在Si衬底上成功制备出高质量的立方氮化硼薄膜，达到国际先进水平。

Successively depositing cBN thin films on Si substrates which reaches international advanced level , the impact of negative substrate bias voltage and RF powers on the formation of cBN thin films were studied .

研究立方氮化硼薄膜表面的性质对于研究立方氮化硼薄膜的成核机理和应用，具有重要的价值。本文用XPS对立方氮化硼薄膜表面进行研究，并对有关问题进行了讨论。

Studying the characteristics of the surface of the cubic boron nitride ( cBN ) thin films is very important to making clear its formation mechanism and application .

与立方氮化硼的合成相比，立方B（CxN1-x）的形成温度下降了近200℃。

The formation temperature of the cubic B ( CxN1-x ) is about 200 ℃ lower than that of c-BN .

本文研究了热灯丝射频等离子体CVD法合成的立方氮化硼薄膜（c－BN），反应气体是8＿2H＿6和NH＿3，衬底材料为Si单晶。

The cubic boron nitride films have been synthesized by hot filament assisted RF plasma chemical vapor deposition ( CVD ) from the reactive gases of B_2H_6 and NH_3 on silicon substrate .

采用自行研制的磁增强活性反应离子镀系统，在脉冲偏压条件下成功地合成了高品质立方氮化硼（cBN）薄膜。

High quality cubic boron nitride ( c BN ) films were synthesized in lab built magnetically enhanced active reaction evaporation system with pulsed DC bias .