磁泡存储器
- 网络Bubble memory;magnetic bubble memory;MBM
磁泡存储器-
磁泡存储器工作温度
Bubble memory operation temperature
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与磁泡存储器相比，BLM的存储密度大大提高。
Compared with magnetic bubble storage memory , the bit density of BLM increases drastically .
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反应离子束刻蚀技术已有效地用于研究和制造大规模和超大规模集成电路，声表面波器件，磁泡存储器，微波器件，集成光路，超导器件，闪烁光栅等。
Reactive ion beam etching technique has been effectively used to study and fabricate large-scale and ultra large scale integrated circuit , acoustic surface wave device , magnetic bubble device microwave device , integrated optical circuit , superconducting device , shimmer optical pattern etc.