电子迁移

这是由于p型半导体空穴导电，而n型半导体则为电子迁移导电，使得表面活性氧物种形成机理不同所致。

These are due to different mechanism of the formation of the partial charged oxygen species on the surface of catalysts .

GaAs中的电子迁移率是Si中电子迁移率的6倍，其电子峰值漂移速度是Si的2倍，因此，GaAs器件具有比Si更优越的性能。

The electronics mobility in GaAs is six times the mobility of electronics in Si .

纤锌矿GaN低场电子迁移率解析模型

An Analytic Low Field Electron Mobility Model of Wurtzite GaN

在较宽的pH值、温度和缓冲浓度范围内观察到了氧化酶修饰电极上的直接电子迁移。

Direct electron transfer on the oxidase modified electrode was observed over a wide range of pH , temperature and buffer concentration .

6H-SiC反型层电子迁移率的MonteCarlo模拟

Monte Carlo Study of Electron Transport in Inversion Layer of 6H-SiC MOS Structure

该电子迁移率解析模型对于GaN器件的数值模拟和器件仿真设计具有很强的实用意义。

The analytic electron mobility model has a strong applicability for numerical simulation of GaN devices .

分子束外延生长InP基赝配高电子迁移率晶体管外延材料

MBE Growth of InP Based PHEMT Epitaxial Materials

Ka波段高电子迁移率晶体管的研制

Development of Ka-Band High Electron Mobility Transistor

AlxGa（1-x）As/GaAs异质结中电子迁移率的压力效应

Pressure Effect on Electronic Mobility in Quasi-Two-Dimensional Al_xGa_ ( 1-x ) As / GaAs Heterojunction Systems

另外三个关键问题：接地点电势上升分析、来自引脚电感的Ldi/dt分析和电子迁移率EM分析。

The three other problems are called ground bounce analysis , Ldi / dt from the pin inductance and EM analysis .

GaNn-MOSFET反型沟道电子迁移率模型

Modeling of Inversion Channel Electron Mobility for GaN n-MOSFET 's

HEMT电子迁移率与器件参数关系

Dependence of Electron Mobility of HEMT on Parameters of Device

氧化酶修饰电极在80°C以上时保持直接电子迁移性质，将电极冷却到室温时，氧化酶仍保持电子迁移能力。

The oxidase modified electrode maintains direct electron transfer properties at the temperature in excess of 80 ° C. Upon cooling down the electrode to room temperature , the oxidase still retained its electron transfer capabilities .

4H-SiC衬底AlGaN/GaN高电子迁移率晶体管的研制

Fabrication of AlGaN / GaN HEMT Grown on 4H-SiC

电子迁移率（μn）和二维电子气（2-DEG）面密度（ns）是影响InPPHEMT器件功率性能的两个重要因素。

Two-dimensional electron gas density and electron mobility are two important factors which affect the power performance of InP PHEMT devices .

高电子迁移率GaAs／AlxGa（1－x）As二维电子气（2DEG）异质结结构参数优化研究

Optimization of Structure Parameters of High Mobility GaAs / Al_xGa_ ( 1-x ) As Two Dimensional Electron Gas ( 2DEG ) Heterostructure

高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。

HEMT is a kind of high speed semiconductor device that bases on the heterojunction modulation doping .

在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管。

MOCVD-grown 0.25 μ m gate-length AlGaN / GaN high electron mobility transistors ( HEMTs ) are fabricated on sapphire substrates .

氮化镓高电子迁移率晶体管（GaNHEMT）模型是GaN微波单片集成电路（MMIC）CAD的基础。

Gallium Nitride High Electron Mobility Transistor ( GaN HEMT ) models are basics of the GaN Microwave Monolithic Integrated Circuit ( MMIC ) CAD .

在器件物理的基础上，提出了一种半经验的GaNn-MOSFET反型沟道电子迁移率模型。

A model for inversion channel electron mobility of GaN n-MOSFET 's is proposed based on semiconductor device physics .

该文介绍了一种高电子迁移率晶体管（HEMT）的小信号参数提取及其仿真软件的研制。

An optimizing parameter extraction technique and emulation software for high electron-mobility transistor ( HEMT ) small-signal model is described .

由于GaAs器件优良的高频、高电子迁移率、低噪声性能，所以现在高频器件一般都选用GaAs材料。

Due to the good performance of GaAs devices of high frequency , high electron mobility and low noise , the high frequency devices are mostly made of GaAs materials now .

而高电子迁移率晶体管（HighElectronMobilityTransistor）作为场效应晶体管中的一种，也开始广泛应用于通信、电子等领域，它具有大功率、低噪声、高频、高速等特点。

High electron mobility transistors ( High Electron MobilityTransistor ) as a field-effect transistor , have been widely used in communications , electronics and other fields , it has the characteristics of high-power , low-noise , high-frequency , high-speed .

GaN是一种宽带隙材料，它具有高电子迁移率、高热导等优异的物理性质，近来受到人们的广泛关注。

There has been considerable interest in GaN recently owing to its large band gap and favorable material properties , such as high electron mobility and very high thermal conductivity .

SiCMOS器件由于受SiO2／SiC界面处高浓度的界面陷进的影响使得反型层的电子迁移率很低，最终导致器件的跨导较低，4H-SiC材料更为明显。

SiC MOS devices suffer from low surface due to high densities of traps at the SiO2 / SiC interface because they cause poor inversion layer mobility , especially for 4H-SiC .

近年来人们报道了用MBE方法生长GaN的飞速进展，利用RF－MBE方法可以获得高的GAN生长速率和高的电子迁移率。

As recently remarkable developments for MBE-grown GaN have been reported , a high growth rate of GaN by RF-MBE , and the high electron mobility values could be obtained .

凭借GaN基半导体材料的良好性能，AlGaN/GaN高电子迁移率晶体管（HEMT）成为微波大功率器件的理想选择。

Due to the excellent property of GaN based semiconductor materials , AlGaN / GaNHigh Electron Mobility Transistor ( HEMT ) become the ideal choice of microwave highpower devices .

AlGaN/GaN高电子迁移率晶体管（HEMTs），是以AlGaN/GaN异质结材料为基础而制造的GaN基器件。

AlGaN / GaN high electron mobility transistor ( HEMT ) is a kind of GaN device based on the AlGaN / GaN heterojunction .

另一方面，由于硅中空穴迁移率远低于电子迁移率，传统的硅半导体衬底也逐渐不能满足集成电路（IC）更高集成度的要求，寻找新型的半导体衬底也是大势所趋。

On the other hand , the conventional Si semiconductor will be incapable for further higher-degree integrated circuit because its hole mobility is much lower than its electron mobility . So it is necessary to find another new semiconductor material .

室温下测得InSb薄膜的电子迁移率为4×104cm2／V.s，晶粒尺寸达微米数量级。

The electron mobility of 4 × 104 cm2 / V · s at room temperature for InSb thin film is obtained .