电子束胶
电子束胶-
在电子束曝光胶图形的三维显影模拟工作中，首次使用了最精确的三维线踪模型。
The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam .
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开发了电子束直写胶图形的加法工艺，在支撑薄膜上得到清晰的钨/铬散射体图形。
An additive technology with electron beam direct writing photoresist patterns is developed and clear W / Cr scattering patterns on the supporting membrane are obtained .
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采用电子束曝光，结合胶的灰化技术，得到了线宽为50nm的胶图形，并用RIE刻蚀五层介质的方法，得到了栅长仅为50nm的自对准假栅结构。
Using e-beam and resist ashing , resist patterns with 50 nm line-width are obtained , and a self-aligned replaced gate structure with 50 nm gate-length is fabricated by etching 5 layers of dielectrics with RIE .